Биполярный транзистор SRA2210E - описание производителя. Основные параметры. Даташиты.
Наименование производителя: SRA2210E
Маркировка: AR
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 4.7 kOhm
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 200 MHz
Статический коэффициент передачи тока (hfe): 120
Корпус транзистора: SOT-523
SRA2210E Datasheet (PDF)
sra2210e.pdf
SRA2210EPNP Silicon TransistorPIN Connection Descriptions OUT Switching application Interface circuit and driver circuit application Features IN R1OUT With built-in bias resistor IN Simplify circuit design COMMON Reduce a quantity of parts and R1 = 4.7Kmanufacturing process High packing density OMMON Ordering Information Type NO
sra2210ef.pdf
SRA2210EFPNP Silicon TransistorPIN Connection Descriptions Switching application OUT Interface circuit and driver circuit application OUT Features IN R1 With built-in bias resistor IN Simplify circuit design COMMON Reduce a quantity of parts and R1 = 4.7Kmanufacturing process High packing density COMMON Ordering Information Type NO.
sra2210m.pdf
SRA2210MPNP Silicon TransistorPIN Connection Descriptions 2.OUT Switching application Interface circuit and driver circuit application Features 3.IN R1 With built-in bias resistor Simplify circuit design Reduce a quantity of parts and R1 = 4.7K1 2 3 manufacturing process High packing density 1. COMMONOrdering Information Type NO. Ma
sra2210sf.pdf
SRA2210SFPNP Silicon TransistorPIN Connection Descriptions OUT Switching application Interface circuit and driver circuit application Features OUT IN R1 With built-in bias resistor Simplify circuit design IN Reduce a quantity of parts and R1 = 4.7Kmanufacturing process COMMON High packing density COMMON Ordering Information Type NO. Mar
sra2210uf.pdf
SRA2210UFPNP Silicon TransistorPIN Connection Descriptions OUT Switching application Interface circuit and driver circuit application Features OUT IN R1 With built-in bias resistor IN Simplify circuit design Reduce a quantity of parts and COMMON R1 = 4.7Kmanufacturing process High packing density COMMON Ordering Information Type NO.
sra2210.pdf
SRA2210PNP Silicon TransistorPIN Connection Descriptions 2. OUT Switching application Interface circuit and driver circuit application Features 3. IN R1 With built-in bias resistor Simplify circuit design Reduce a quantity of parts and R1 = 4.7K1 2 3 manufacturing process High packing density 1. COMMON Ordering Information Type NO.
sra2210s.pdf
SRA2210SPNP Silicon TransistorPIN Connection Descriptions OUT Switching application Interface circuit and driver circuit application Features OUT IN R1 With built-in bias resistor Simplify circuit design Reduce a quantity of parts and INR1 = 4.7Kmanufacturing process COMMON High packing density COMMON Ordering Information Type NO
sra2210u.pdf
SRA2210UPNP Silicon TransistorPIN Connection Descriptions OUT Switching application Interface circuit and driver circuit application Features IN R1OUT With built-in bias resistor IN Simplify circuit design COMMON Reduce a quantity of parts and R1 = 4.7Kmanufacturing process High packing density COMMON Ordering Information Type NO
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050