Биполярный транзистор SRA2211M - описание производителя. Основные параметры. Даташиты.
Наименование производителя: SRA2211M
Маркировка: 2211
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 10 kOhm
Максимальная рассеиваемая мощность (Pc): 0.4 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 200 MHz
Статический коэффициент передачи тока (hfe): 120
Корпус транзистора: TO-92M
SRA2211M Datasheet (PDF)
sra2211m.pdf
SRA2211MPNP Silicon TransistorPIN Connection Descriptions OUT Switching application Interface circuit and driver circuit application Features IN R1 With built-in bias resistor Simplify circuit design Reduce a quantity of parts and R1 = 10K 1 2 3 manufacturing process High packing density COMMON Ordering Information Type NO. Marking
sra2211sf.pdf
SRA2211SFPNP Silicon TransistorPIN Connection Descriptions OUT Switching application Interface circuit and driver circuit application Features OUT IN R1 With built-in bias resistor Simplify circuit design IN Reduce a quantity of parts and R1 = 10K manufacturing process COMMON High packing density COMMON Ordering Information Type NO. Mar
sra2211u.pdf
SRA2211UPNP Silicon TransistorPIN Connection Descriptions OUT Switching application Interface circuit and driver circuit application Features IN R1OUT With built-in bias resistor IN Simplify circuit design COMMON Reduce a quantity of parts and R1 = 10K manufacturing process High packing density COMMON Ordering Information Type NO
sra2211e.pdf
SRA2211EPNP Silicon TransistorPIN Connection Descriptions OUT Switching application Interface circuit and driver circuit application Features IN R1OUT With built-in bias resistor IN Simplify circuit design COMMON Reduce a quantity of parts and R1 = 10K manufacturing process High packing density Ordering Information Type NO Marking
sra2211ef.pdf
SRA2211EFPNP Silicon TransistorPIN Connection Descriptions Switching application OUT Interface circuit and driver circuit application OUT Features IN R1 With built-in bias resistor IN Simplify circuit design COMMON Reduce a quantity of parts and R1 = 10K manufacturing process High packing density Ordering Information Type NO. Marking P
sra2211uf.pdf
SRA2211UFPNP Silicon TransistorPIN Connection Descriptions OUT Switching application Interface circuit and driver circuit application Features OUT IN R1 With built-in bias resistor IN Simplify circuit design Reduce a quantity of parts and COMMON R1 = 10K manufacturing process High packing density COMMON Ordering Information Type NO.
sra2211s.pdf
SRA2211SPNP Silicon TransistorPIN Connection Descriptions OUT Switching application Interface circuit and driver circuit application Features OUT IN R1 With built-in bias resistor Simplify circuit design Reduce a quantity of parts and INR1 = 10K manufacturing process COMMON High packing density COMMON Ordering Information Type NO
sra2211.pdf
SRA2211PNP Silicon TransistorPIN Connection Descriptions 2. OUT Switching application Interface circuit and driver circuit application Features 3. IN R1 With built-in bias resistor Simplify circuit design Reduce a quantity of parts and R1 = 10K 1 2 3 manufacturing process High packing density 1. COMMON Ordering Information Type NO.
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050