Биполярный транзистор SRA2212S - описание производителя. Основные параметры. Даташиты.
Наименование производителя: SRA2212S
Маркировка: RAB
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 100 kOhm
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 200 MHz
Статический коэффициент передачи тока (hfe): 120
Корпус транзистора: SOT-23
SRA2212S Datasheet (PDF)
sra2212s.pdf
SRA2212SPNP Silicon TransistorPIN Connection Descriptions OUT Switching application Interface circuit and driver circuit application Features OUT IN R1 With built-in bias resistor Simplify circuit design Reduce a quantity of parts and INR1 = 100Kmanufacturing process COMMON High packing density COMMON Ordering Information Type NO
sra2212sf.pdf
SRA2212SFPNP Silicon TransistorPIN Connection Descriptions OUT Switching application Interface circuit and driver circuit application Features OUT IN R1 With built-in bias resistor Simplify circuit design IN Reduce a quantity of parts and R1 = 100Kmanufacturing process COMMON High packing density COMMON Ordering Information Type NO. Mar
sra2212u.pdf
SRA2212UPNP Silicon TransistorPIN Connection Descriptions OUT Switching application Interface circuit and driver circuit application Features IN R1OUT With built-in bias resistor IN Simplify circuit design COMMON Reduce a quantity of parts and R1 = 100Kmanufacturing process High packing density COMMON Ordering Information Type NO
sra2212.pdf
SRA2212PNP Silicon TransistorPIN Connection Descriptions 2. OUT Switching application Interface circuit and driver circuit application Features 3. IN R1 With built-in bias resistor Simplify circuit design Reduce a quantity of parts and R1 = 100K1 2 3 manufacturing process High packing density 1. COMMON Ordering Information Type NO.
sra2212ef.pdf
SRA2212EFPNP Silicon TransistorPIN Connection Descriptions Switching application OUT Interface circuit and driver circuit application OUT Features IN R1 With built-in bias resistor IN Simplify circuit design COMMON Reduce a quantity of parts and R1 = 100Kmanufacturing process High packing density Ordering Information Type NO. Marking P
sra2212uf.pdf
SRA2212UFPNP Silicon TransistorPIN Connection Descriptions OUT Switching application Interface circuit and driver circuit application Features OUT IN R1 With built-in bias resistor IN Simplify circuit design Reduce a quantity of parts and COMMON R1 = 100Kmanufacturing process High packing density COMMON Ordering Information Type NO.
sra2212e.pdf
SRA2212EPNP Silicon TransistorPIN Connection Descriptions OUT Switching application Interface circuit and driver circuit application Features IN R1OUT With built-in bias resistors IN Simplify circuit design COMMON Reduce a quantity of parts and R1 = 100Kmanufacturing process High packing density Ordering Information Type NO. Marki
sra2212m.pdf
SRA2212MPNP Silicon TransistorPIN Connection Descriptions OUT Switching application Interface circuit and driver circuit application Features IN R1 With built-in bias resistor Simplify circuit design Reduce a quantity of parts and R1 = 100K1 2 3 manufacturing process High packing density COMMON Ordering Information Type NO. Marking
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
