SRC1201M. Аналоги и основные параметры
Наименование производителя: SRC1201M
Маркировка: 1201
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 4.7 kOhm
Встроенный резистор цепи смещения R2 = 4.7 kOhm
Соотношение сопротивлений R1/R2 = 1
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.4 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 200 MHz
Статический коэффициент передачи тока (hFE): 30
Корпус транзистора: TO-92M
Аналоги (замена) для SRC1201M
- подборⓘ биполярного транзистора по параметрам
SRC1201M даташит
src1201m.pdf
SRC1201M NPN Silicon Transistor PIN Connection Descriptions Switching application 2. OUT Interface circuit and driver circuit application Features 3. IN R1 With built-in bias resistors 1 2 3 Simplify circuit design Reduce a quantity of parts and R2 manufacturing process R1 R2 High packing density 4.7K 4.7K 1. COMMON Ordering I
src1201u.pdf
SRC1201U NPN Silicon Transistor PIN Connection Descriptions Switching application OUT Interface circuit and driver circuit application OUT Features IN IN R1 With built-in bias resistors COMMON Simplify circuit design Reduce a quantity of parts and R2 manufacturing process R1 R2 High packing density 4.7K 4.7K COMMON Ordering
src1201uf.pdf
SRC1201UF NPN Silicon Transistor PIN Connection Descriptions Switching application OUT OUT Interface circuit and driver circuit application IN R1 Features COMMON IN With built-in bias resistors Simplify circuit design R2 R1 R2 Reduce a quantity of parts and manufacturing process 4.7K 4.7K High packing density COMMON Ordering
src1201.pdf
SRC1201 NPN Silicon Transistor PIN Connection Descriptions Switching application 2. OUT Interface circuit and driver circuit application Features 3. IN R1 With built-in bias resistors 1 2 3 Simplify circuit design Reduce a quantity of parts and R2 manufacturing process R1 R2 High packing density 4.7K 4.7K 1. COMMON Ordering In
Другие транзисторы: SRA2219M, SRA2219S, SRA2219SF, SRA2219U, SRA2219UF, SRC1201, SRC1201E, SRC1201EF, B647, SRC1201S, SRC1201SF, SRC1201U, SRC1201UF, SRC1202, SRC1202E, SRC1202EF, SRC1202M
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Список транзисторов
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