SRC1206U. Аналоги и основные параметры
Наименование производителя: SRC1206U
Маркировка: R6
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 4.7 kOhm
Встроенный резистор цепи смещения R2 = 47 kOhm
Соотношение сопротивлений R1/R2 = 0.1
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 200 MHz
Статический коэффициент передачи тока (hFE): 80
Корпус транзистора: SOT-323
Аналоги (замена) для SRC1206U
- подборⓘ биполярного транзистора по параметрам
SRC1206U даташит
src1206u.pdf
SRC1206U NPN Silicon Transistor PIN Connection Descriptions Switching application OUT Interface circuit and driver circuit application OUT IN R1 COMMON Features IN With built-in bias resistors Simplify circuit design R2 R1 R2 Reduce a quantity of parts and manufacturing process 4.7K 47K High packing density COMMON Ordering I
src1206uf.pdf
SRC1206UF NPN Silicon Transistor PIN Connection Descriptions Switching application OUT OUT Interface circuit and driver circuit application IN R1 Features COMMON IN With built-in bias resistors Simplify circuit design R2 R1 R2 Reduce a quantity of parts and manufacturing process 4.7K 47K High packing density COMMON Ordering
src1206ef.pdf
SRC1206EF NPN Silicon Transistor PIN Connection Descriptions Switching application OUT Interface circuit and driver circuit application OUT IN Features IN R1 COMMON With built-in bias resistors Simplify circuit design Reduce a quantity of parts and R2 manufacturing process R1 R2 High packing density 4.7K 47K COMMON Ordering I
src1206m.pdf
SRC1206M NPN Silicon Transistor PIN Connection Descriptions Switching application 2. OUT Interface circuit and driver circuit application Features 3. IN R1 With built-in bias resistors 1 2 3 Simplify circuit design Reduce a quantity of parts and R2 manufacturing process R1 R2 High packing density 4.7K 47K 1. COMMON Ordering In
Другие транзисторы: SRC1205U, SRC1205UF, SRC1206, SRC1206E, SRC1206EF, SRC1206M, SRC1206S, SRC1206SF, S8550, SRC1206UF, SRC1207, SRC1207E, SRC1207EF, SRC1207M, SRC1207S, SRC1207SF, SRC1207U
History: SRA2207M | 3DD127D3 | 3CA941 | FJN4307R
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