Биполярный транзистор SRC1210E - описание производителя. Основные параметры. Даташиты.
Наименование производителя: SRC1210E
Маркировка: RA
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 4.7 kOhm
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 200 MHz
Статический коэффициент передачи тока (hfe): 120
Корпус транзистора: SOT-523
SRC1210E Datasheet (PDF)
src1210e.pdf
SRC1210ENPN Silicon TransistorPIN Connection Descriptions OUT Switching application Interface circuit and driver circuit application Features IN R1 OUT With built-in bias resistor IN Simplify circuit design COMMON Reduce a quantity of parts and R1 = 4.7Kmanufacturing process High packing density COMMON Ordering Information T
src1210ef.pdf
SRC1210EFNPN Silicon TransistorPIN Connection Descriptions Switching application OUT Interface circuit and driver circuit application OUT Features IN R1 With built-in bias resistor IN Simplify circuit design COMMON Reduce a quantity of parts and R1 = 4.7Kmanufacturing process High packing density COMMON Ordering Information Ty
src1210u.pdf
SRC1210UNPN Silicon TransistorPIN Connection Descriptions OUT Switching application Interface circuit and driver circuit application IN R1Features With built-in bias resistor OUT Simplify circuit design IN Reduce a quantity of parts and COMMON R1 = 4.7Kmanufacturing process High packing density COMMON Ordering Information T
src1210sf.pdf
SRC1210SFNPN Silicon TransistorPIN Connection Descriptions OUT Switching application Interface circuit and driver circuit application OUT Features IN R1 With built-in bias resistor IN Simplify circuit design Reduce a quantity of parts and COMMON R1 = 4.7Kmanufacturing process High packing density COMMON Ordering Information T
src1210.pdf
SRC1210NPN Silicon TransistorPIN Connection Descriptions Switching application OUT Interface circuit and driver circuit application Features IN R1 With built-in bias resistor Simplify circuit design Reduce a quantity of parts and R1 = 4.7K1 2 3 manufacturing process High packing density COMMON Ordering Information Type NO. Marki
src1210s.pdf
SRC1210S NPN Silicon Transistor Descriptions OUT OUT Switching application Interface circuit and driver circuit application IN R1 IN Features COMMON With built-in bias resistor Simplify circuit design R2 R1 Reduce a quantity of parts and manufacturing process High packing density 4.7K SOT-23 Ordering Information Part Numbe
src1210m.pdf
SRC1210MNPN Silicon TransistorPIN Connection Descriptions Switching application OUT Interface circuit and driver circuit application Features IN R1 With built-in bias resistor Simplify circuit design Reduce a quantity of parts and R1 = 4.7K1 2 3 manufacturing process High packing density COMMON Ordering Information Type NO. Mark
src1210uf.pdf
SRC1210UFNPN Silicon TransistorPIN Connection Descriptions Switching application OUT Interface circuit and driver circuit application OUT Features IN R1IN With built-in bias resistor Simplify circuit design COMMON Reduce a quantity of parts and R1 = 4.7Kmanufacturing process High packing density COMMON Ordering Information Type
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050