Биполярный транзистор SRC1211EF - описание производителя. Основные параметры. Даташиты.
Наименование производителя: SRC1211EF
Маркировка: RD
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 10 kOhm
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 200 MHz
Статический коэффициент передачи тока (hfe): 120
Корпус транзистора: SOT-523F
Аналоги (замена) для SRC1211EF
SRC1211EF Datasheet (PDF)
src1211ef.pdf
SRC1211EFNPN Silicon TransistorPIN Connection Descriptions Switching application OUT Interface circuit and driver circuit application Features OUT IN R1 With built-in bias resistor IN Simplify circuit design Reduce a quantity of parts and COMMON R1 = 10K manufacturing process High packing density COMMON Ordering Information Ty
src1211e.pdf
SRC1211ENPN Silicon TransistorPIN Connection Descriptions Switching application OUT Interface circuit and driver circuit application Features IN R1OUT With built-in bias resistor IN Simplify circuit design COMMON Reduce a quantity of parts and R1 = 10K manufacturing process High packing density COMMON Ordering Information Type
src1211uf.pdf
SRC1211UFNPN Silicon TransistorPIN Connection Descriptions OUT Switching application Interface circuit and driver circuit application OUT R1 IN Features IN With built-in bias resistor Simplify circuit design COMMON Reduce a quantity of parts and R1 = 10K manufacturing process High packing density COMMON Ordering Information
src1211s.pdf
SRC1211SNPN Silicon TransistorPIN Connection Descriptions OUT Switching application Interface circuit and driver circuit application OUT Features IN R1 With built-in bias resistor Simplify circuit design IN Reduce a quantity of parts and COMMONR1 = 10K manufacturing process High packing density COMMON Ordering Information Ty
src1211.pdf
SRC1211NPN Silicon TransistorPIN Connection Descriptions Switching application OUT Interface circuit and driver circuit application Features IN R1 With built-in bias resistor Simplify circuit design Reduce a quantity of parts and R1 = 10K 1 2 3 manufacturing process High packing density COMMON Ordering Information Type NO. Mark
src1211m.pdf
SRC1211MNPN Silicon TransistorPIN Connection Descriptions Switching application OUT Interface circuit and driver circuit application Features IN R1 With built-in bias resistor Simplify circuit design Reduce a quantity of parts and R1 = 10K 1 2 3 manufacturing process High packing density COMMON Ordering Information Type NO. Mark
src1211u.pdf
SRC1211UNPN Silicon TransistorPIN Connection Descriptions OUT Switching application Interface circuit and driver circuit application R1IN Features OUT With built-in bias resistor IN Simplify circuit design COMMON Reduce a quantity of parts and R1 = 10K manufacturing process High packing density COMMON Ordering Information
src1211sf.pdf
SRC1211SFNPN Silicon TransistorPIN Connection Descriptions OUT Switching application Interface circuit and driver circuit application OUT Features IN R1 With built-in bias resistor IN Simplify circuit design Reduce a quantity of parts and COMMON R1 = 10K manufacturing process High packing density COMMON Ordering Information T
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050