MMBT3904EF - описание и поиск аналогов

 ..1. Size:255K  auk
 mmbt3904ef.pdf 

MMBT3904EF NPN Silicon Transistor Descriptions PIN Connection Small signal application Switching application 3 Features Low collector saturation voltage 1 Low collector output capacitance 2 Complementary pair with MMBT3906EF SOT-523F Ordering Information Type NO. Marking Package Code Z MMBT3904EF SOT-523F Device Code

 5.1. Size:157K  wietron
 mmbt3904e.pdf 

MMBT3904E NPN General Purpose Transistor 3 2 1 1 The MMBT3904E device is a spin-off of our popular SOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. SOT-1123 It is designed for general purpose amplifier applications and is housed in the SOT-1123 surface mount package. COLLECTOR This device is ideal for low-power surface mount applications 3 where board space is at a premium. FE

 6.1. Size:423K  motorola
 mmbt3904w mmbt3906wt1 mmbt3904 06.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA MMBT3904WT1/D General Purpose Transistors NPN NPN and PNP Silicon MMBT3904WT1 PNP These transistors are designed for general purpose amplifier applications. They are housed in the SOT 323/SC 70 which is designed for low power surface mount MMBT3906WT1 applications. MAXIMUM RATINGS Rating Symbol Value Unit GENERAL PURPO

 6.2. Size:297K  motorola
 mmbt3904wt1 mmbt3906wt1.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA MMBT3904WT1/D General Purpose Transistors NPN NPN and PNP Silicon MMBT3904WT1 PNP These transistors are designed for general purpose amplifier applications. They are housed in the SOT 323/SC 70 which is designed for low power surface mount MMBT3906WT1 applications. MAXIMUM RATINGS Rating Symbol Value Unit GENERAL PURPO

 6.3. Size:164K  motorola
 mmbt3904lt1rev1d.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT3904LT1/D General Purpose Transistor MMBT3904LT1 NPN Silicon COLLECTOR Motorola Preferred Device 3 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit CASE 318 08, STYLE 6 Collector Emitter Voltage VCEO 40 Vdc SOT 23 (TO 236AB) Collector Base Voltage VCBO 60 Vdc Emitter Base Voltage VE

 6.4. Size:230K  motorola
 mmbt3904l.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT3904LT1/D General Purpose Transistor MMBT3904LT1 NPN Silicon COLLECTOR Motorola Preferred Device 3 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit CASE 318 08, STYLE 6 Collector Emitter Voltage VCEO 40 Vdc SOT 23 (TO 236AB) Collector Base Voltage VCBO 60 Vdc Emitter Base Voltage VE

 6.5. Size:54K  philips
 mmbt3904 1.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBT3904 NPN switching transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN switching transistor MMBT3904 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 base 2 emitter APPLICATIONS 3 collector Telephony and professional communication

 6.6. Size:58K  st
 mmbt3904.pdf 

MMBT3904 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking MMBT3904 34 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPE IS MMBT3906 APPLICATIONS SOT-23 WELL SUITABLE FOR PORTABLE EQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOLTA

 6.7. Size:132K  fairchild semi
 mmbt3904t.pdf 

February 2008 MMBT3904T NPN Epitaxial Silicon Transistor Features C General purpose amplifier transistor. E Ultra-Small Surface Mount Package for all types. B Suitable for general switching & amplification Marking A04 Well suited for portable application SOT-523F As complementary type, PNP MMBT3906T is recommended Absolute Maximum Ratings Ta = 25 C unless o

 6.8. Size:111K  fairchild semi
 2n3904 mmbt3904 pzt3904.pdf 

2N3904 MMBT3904 PZT3904 C C E E C C TO-92 B B SOT-23 B E SOT-223 Mark 1A NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage

 6.9. Size:194K  fairchild semi
 mmbt3904sl.pdf 

February 2008 MMBT3904SL C NPN Epitaxial Silicon Transistor Features General purpose amplifier transistor. E Ultra small surface mount package for all types(max 0.43mm tall) B Suitable for general switching & amplification Well suited for portable application Marking AA SOT-923F As complementary type, PNP MMBT3906SL is recommended Pb free Absolute Maxim

 6.10. Size:121K  fairchild semi
 mmbt3904k.pdf 

MMBT3904K NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1AK 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA PC Collector Power Dissipation 350 mW

 6.11. Size:350K  nxp
 mmbt3904.pdf 

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 6.12. Size:399K  diodes
 mmbt3904.pdf 

MMBT3904 40V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case SOT23 Complementary PNP Type Available (MMBT3906) Case Material Molded Plastic, Green Molding Compound. Ideal for Medium Power Amplification and Switching UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant

 6.13. Size:135K  diodes
 mmbt3904fa.pdf 

MMBT3904FA 40V NPN SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data BVCEO > 40V Case X2-DFN0806-3 IC = 200mA high Collector Current Case Material Molded Plastic, Green Molding Compound. PD = 435mW Power Dissipation UL Flammability Classification Rating 94V-0 0.48mm2 package footprint, 16 times smaller than SOT23 Moisture Sensitivity Le

 6.14. Size:396K  diodes
 mmbt3904lp.pdf 

MMBT3904LP 40V NPN SMALL SIGNAL TRANSISTOR IN DFN1006 Features Mechanical Data Case X1-DFN1006-3 BVCEO > 40V Case Material Molded Plastic, Green Molding Compound. IC = 200mA High Collector Current UL Flammability Classification Rating 94V-0 PD = 1000mW Power Dissipation Moisture Sensitivity Level 1 per J-STD-020 0.60mm2 Package Footprint,

 6.15. Size:572K  diodes
 mmbt3904fz.pdf 

MMBT3904FZ 40V NPN SMALL SIGNAL TRANSISTOR IN DFN0606 Features Mechanical Data BVCEO > 40V Case X2-DFN0606-3 IC = 200mA High Collector Current Case Material Molded Plastic, Green Molding Compound. PD = 925mW Power Dissipation UL Flammability Classification Rating 94V-0 0.36mm2 Package Footprint, 40% Smaller than DFN1006 Moisture Sensitivity Level

 6.16. Size:261K  diodes
 mmbt3904t.pdf 

MMBT3904T 60V NPN SMALL SIGNAL TRANSISTOR IN SOT523 Features Mechanical Data BVCEO > 40V Case SOT523 Case Material Molded Plastic. Green Molding Compound. IC = 200mA Collector Current UL Flammability Rating 94V-0 Epitaxial Planar Die Construction Moisture Sensitivity Level 1 per J-STD-020 Ultra-Small Surface Mount Package Terminals

 6.17. Size:173K  diodes
 mmbt3904t 2.pdf 

MMBT3904T NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary PNP Type Available (MMBT3906T) C Dim Min Max Typ Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) A 0.15 0.30 0.22 TOP VIEW B C "Green" Device (Note 3 and 4) B 0.75 0.85 0.80 B E C 1.45 1.75 1.60 Mechanical Data

 6.18. Size:862K  infineon
 smbt3904 mmbt3904 smbt3904s.pdf 

SMBT3904...MMBT3904 NPN Silicon Switching Transistors High DC current gain 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3904S Two (galvanic) internal isolated transistors with good matching in one package Complementary types SMBT3906... MMBT3906 SMBT3904S For orientation in reel see package information below Pb-free (RoHS compliant)

 6.19. Size:145K  infineon
 smbt3904series mmbt3904.pdf 

SMBT3904...MMBT3904 NPN Silicon Switching Transistors High DC current gain 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3904S / SMBT3904U Two (galvanic) internal isolated transistors with good matching in one package Complementary types SMBT3906... MMBT3906 SMBT3904S / U For orientation in reel see package information below Pb-free

 6.20. Size:1745K  infineon
 smbt3904 mmbt3904 smbt3904s smbt3904u.pdf 

 6.21. Size:420K  mcc
 mmbt3904.pdf 

MMBT3904 Features Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS General Purpose Compliant. See Ordering Information) Amplifier Maximum Ratings @ 25 C Unless Otherwise Specified Operating Junction Temperature Range -5

 6.22. Size:563K  mcc
 mmbt3904he3.pdf 

MMBT3904HE3 Features Halogen Free. "Green" Device (Note 1) AEC-Q101 Qualified Moisture Sensitivity Level 1 NPN Epoxy Meets UL 94 V-0 Flammability Rating General Purpose Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Amplifier Compliant. See Ordering Information) Maximum Ratings @ 25 C Unless Otherwise Specified Operating Junction Temperature R

 6.23. Size:690K  mcc
 mmbt3904t.pdf 

MMBT3904T Features Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS General Purpose Compliant. See Ordering Information) Amplifier Maximum Ratings @ 25 C Unless Otherwise Specified Operating Junction Temperature Range -

 6.24. Size:332K  mcc
 mmbt3904 sot-23.pdf 

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth MMBT3904 Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Capable of 350mWatts of Power Dissipation and 200mA Ic. NPN General Operating and Storage Junction Temperatures -55 to 150 Surface Mount SOT-23 Package Purpose Amplifier Lead Free Finish/RoHS Compl

 6.25. Size:363K  mcc
 mmbt3904l3.pdf 

MMBT3904L3 Features Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS General Purpose Compliant. See Ordering Information) Amplifier Maximum Ratings @ 25 C Unless Otherwise Specified Operating Junction Temperature Range

 6.26. Size:216K  mcc
 mmbt3904t sot-523.pdf 

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components MMBT3904T CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features 150mW Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN General Operatingand Storage Junction Temperatures -55 to 150 Purpose Amplifier Epoxy meets

 6.27. Size:92K  onsemi
 mmbt3904tt1g smmbt3904tt1g.pdf 

MMBT3904TT1G, SMMBT3904TT1G General Purpose Transistors NPN Silicon This transistor is designed for general purpose amplifier www.onsemi.com applications. It is housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. GENERAL PURPOSE Features AMPLIFIER TRANSISTORS S Prefix for Automotive and Other Applications Requiring Unique SURFACE MOUNT

 6.28. Size:128K  onsemi
 mmbt3904wt1g smmbt3904wt1g mmbt3906wt1g smmbt3906wt1g.pdf 

MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP General Purpose www.onsemi.com Transistors NPN and PNP Silicon COLLECTOR 3 These transistors are designed for general purpose amplifier applications. They are housed in the SOT-323/SC-70 package which 1 is designed for low power surface mount applications. BASE Features 2 S Prefix for Automotive an

 6.29. Size:137K  onsemi
 mmbt3904l smmbt3904l.pdf 

MMBT3904L, SMMBT3904L General Purpose Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS www.onsemi.com Compliant S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR 3 Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit 2 Collector-Emitte

 6.30. Size:160K  onsemi
 mmbt3904wt1 mmbt3906wt1.pdf 

MMBT3904WT1, NPN MMBT3906WT1, PNP General Purpose Transistors NPN and PNP Silicon http //onsemi.com These transistors are designed for general purpose amplifier COLLECTOR applications. They are housed in the SOT-323/SC-70 package which 3 is designed for low power surface mount applications. Features 1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS BASE Complian

 6.31. Size:1411K  onsemi
 mmbt3904wt1g mmbt3906wt1g.pdf 

MMBT3904WT1, NPN, SMMBT3904WT1, NPN, MMBT3906WT1, PNP General Purpose Transistors http //onsemi.com NPN and PNP Silicon COLLECTOR These transistors are designed for general purpose amplifier 3 applications. They are housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. 1 BASE Features AEC-Q101 Qualified and PPAP Capable 2 S Pref

 6.32. Size:131K  onsemi
 mmbt3904lt1g.pdf 

MMBT3904L, SMMBT3904L General Purpose Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR 3 Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit 2 Collector-Emi

 6.33. Size:478K  onsemi
 2n3904bu 2n3904ta 2n3904tar 2n3904tf 2n3904tfr mmbt3904 pzt3904.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.34. Size:131K  onsemi
 mmbt3904lt3g.pdf 

MMBT3904L, SMMBT3904L General Purpose Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR 3 Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit 2 Collector-Emi

 6.35. Size:135K  onsemi
 mmbt3904tt1g.pdf 

MMBT3904TT1G, SMMBT3904TT1G General Purpose Transistors NPN Silicon This transistor is designed for general purpose amplifier http //onsemi.com applications. It is housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. GENERAL PURPOSE Features AMPLIFIER TRANSISTORS AEC-Q101 Qualified and PPAP Capable SURFACE MOUNT S Prefix for Automo

 6.36. Size:114K  onsemi
 mmbt3904lt1-d.pdf 

MMBT3904LT1G General Purpose Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 Collector-Emitter Voltage VCEO 40 Vdc BASE Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc 2 EMITTER Collector Current - Continuous IC 200 mAdc Coll

 6.37. Size:474K  onsemi
 2n3904 mmbt3904 pzt3904.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.38. Size:102K  onsemi
 mmbt3904tt1.pdf 

MMBT3904TT1 General Purpose Transistors NPN Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. http //onsemi.com Features GENERAL PURPOSE Pb-Free Package is Available AMPLIFIER TRANSISTORS SURFACE MOUNT MAXIMUM RATINGS (TA = 25 C) COLLECTOR Rating

 6.39. Size:157K  utc
 mmbt3904.pdf 

UNISONIC TECHNOLOGIES CO., LTD MMBT3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage VCEO=40V * Collector Dissipation PD(MAX)=350mW * Complementary to UTC MMBT3906 ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3 MMBT3904G-AE3-R SOT-23 E B C Tape Reel MMBT3904G-AL3-R SOT-323 E B C Tape

 6.40. Size:1271K  secos
 mmbt3904.pdf 

MMBT3904 200 mA, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SOT-23 Collector current capability IC=200mA Collector-emitter voltage VCEO=40V. APPLICATION A L General switching and amplification. 3 3 Top View C B 1 1 2 2 K E PACKAGING DIMENSION

 6.41. Size:179K  secos
 mmbt3904fw.pdf 

MMBT3904FW NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product FEATURES SOT-523 A Epitaxial Planar Die Construction Dim Min Max L Complementary PNP Type Available A 1.500 1.700 (MMBT3906FW) B 0.750 0.850 Ideal for Medium Power Amplification and S Top View B C 0.700 0.900 Switching D 0.250 0.350 COLLECTOR V G G 0.900 1.100 3 3 H 0.0

 6.42. Size:318K  secos
 mmbt3904z.pdf 

MMBT3904Z 200 mA, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SOT-923 Collector current capability IC=200mA Collector-emitter voltage VCEO=40V. APPLICATION General switching and amplification. (Top View) MARKING Date code 2 PACKAGING DIMENSION Millimet

 6.43. Size:785K  secos
 mmbt3904t.pdf 

MMBT3904T NPN Silicon General Purpose Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-523 FEATURES Simplifies Circuit Design. We Declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device Marking Shipping MMBT3904T MA 3000/Tape&Reel Millimeter Millimete

 6.44. Size:396K  secos
 mmbt3904w.pdf 

MMBT3904W NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES SOT-323(SC-70) Epitaxial Planar Die Construction Dim Min Max A Complementary PNP Type Available L A 1.800 2.200 (MMBT3906W) B 1.150 1.350 3 Ideal for Medium Power Amplification and S C 0.800 1.000 Top View B Switching

 6.45. Size:61K  secos
 mmbt3904zw.pdf 

MMBT3904ZW 200 mA, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free WBFBP-03E FEATURES Collector current capability IC=200mA Collector-emitter voltage VCEO=40V. APPLICATION General switching and amplification. MARKING Millimeter Millimeter REF. REF. Min. Max. Min. Max.

 6.46. Size:216K  taiwansemi
 mmbt3904.pdf 

MMBT3904 Taiwan Semiconductor Small Signal Product 300mW, NPN Small Signal Transistor FEATURES - Epitaxial planar die construction - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free version and RoHS compliant - Packing code with suffix "G" means green compound (halogen-free) SOT-23 MECHANICAL DATA - Case

 6.47. Size:248K  taiwansemi
 mmbt3904l.pdf 

MMBT3904L Taiwan Semiconductor Small Signal Product 300mW, NPN Small Signal Transistor FEATURES - Epitaxial planar die construction - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free version and RoHS compliant - Packing code with suffix "G" means green compound (halogen-free) SOT-23 MECHANICAL DATA - Cas

 6.48. Size:1498K  jiangsu
 mmbt3904.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR (NPN) SOT 23 FEATURES Complementary to MMBT3906 MARKING 1AM MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE VCBO Collector-Base Voltage 60 V 2. EMITTER VCEO Collector-Emitter Voltage 40 V 3. COLLECTOR VEBO Emit

 6.49. Size:1379K  jiangsu
 mmbt3904m.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-723 Plastic-Encapsulate Transistors SOT-723 MMBT3904M TRANSISTOR (NPN) FEATURE Complementary to MMBT3906M Small Package MARKING 1N 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted ) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage

 6.50. Size:2416K  jiangsu
 mmbt3904t.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors MMBT3904T TRANSISTOR (NPN) FEATURES SOT 523 Complementary to MMBT3906T Small Package MARKING 1N MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 60 V CBO 2. EMITTER V Collector-Emitter Voltage 40 V CEO

 6.51. Size:125K  zovie
 mmbt3904gh.pdf 

Zowie Technology Corporation General Purpose Transistor NPN Silicon Halogen-free type Lead free product COLLECTOR 3 3 BASE 1 1 2 MMBT3904GH 2 EMITTER SOT-23 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current-Continuous IC 200 mAdc THERMAL CHARACTERISTICS Char

 6.52. Size:118K  zovie
 mmbt3904wg.pdf 

Zowie Technology Corporation General Purpose Transistor NPN Silicon Lead free product COLLECTOR 3 3 BASE 1 1 MMBT3904WG 2 2 SOT-323 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current-Continuous IC 200 mAdc THERMAL CHARACTERISTICS Characteristic Symbol

 6.53. Size:116K  zovie
 mmbt3904wgh.pdf 

Zowie Technology Corporation General Purpose Transistor NPN Silicon Lead free product Halogen-free type COLLECTOR 3 3 BASE 1 1 MMBT3904WGH 2 2 SOT-323 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current-Continuous IC 200 mAdc THERMAL CHARACTERISTICS Ch

 6.54. Size:637K  htsemi
 mmbt3904.pdf 

MMBT3904 TRANSISTOR(NPN) SOT-23 FEA TURES Complementary Type The PNP Transistor MMBT3906 is Recommended Epitaxial Planar Die Construction (3)C MARKING 1AM 1AM (1)B (2)E MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Curre

 6.55. Size:321K  gsme
 mmbt3904.pdf 

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM3904( MMBT3904) MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit

 6.56. Size:215K  lge
 mmbt3904.pdf 

MMBT3904 SOT-23 Transistor(NPN) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features As complementary type the PNP transistor MMBT3906 is recommended Epitaxial planar die construction MARKING 1AM MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Vo

 6.57. Size:1617K  lge
 mmbt3904lt1.pdf 

MMBT3904LT1 NPN SWITCHING TRANSISTOR 1. BASE 2. EMITTER 3. COLLECTOR FEATURES A Epitaxial planar die construction. SOT-23 E Complementary PNP type available Dim Min Max A 2.70 3.10 K B (MMBT3906). B 1.10 1.50 C 1.0 Typical Collector Current Capability ICM =200mA. D 0.4 Typical J D E 0.35 0.48 Collector-emitter Voltage VCEO=40V. G G 1.80 2.00 H 0.02 0.1 H

 6.58. Size:205K  wietron
 mmbt3904.pdf 

MMBT3904 COLLECTOR 3 General Purpose Transistor 3 NPN Silicon 1 1 BASE 2 2 SOT-23 EMITTER Maximum Ratings Rating Symbol Value Unit Collector-Emitter Voltage V 40 Vdc CEO Collector-Base Voltage VCBO 60 Vdc Emitter-Base VOltage VEBO 6.0 Vdc Collector Current-Continuous IC 200 mAdc Thermal Characteristics Characteristics Symbol Max Unit Total Device Dissipation FR-5 Board (

 6.59. Size:355K  wietron
 mmbt3904t.pdf 

MMBT3904T General Purpose NPN SiliconTransistor 3 COLLECTOR 3 P b Lead(Pb)-Free 1 2 1 BASE SC-89 2 SOT-523F EMITTER Maximum Ratings Rating Symbol Value Unit Collector-Emitter Voltage V 40 Vdc CEO Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current-Continuous IC 200 mAdc Thermal Characteristics Characteristics Symbol Max Unit (1) Total

 6.60. Size:373K  wietron
 mmbt3904w.pdf 

MMBT3904W COLLECTOR 3 General Purpose Transistor 3 NPN Silicon 1 BASE 1 2 2 EMITTER SOT-323(SC-70) Maximum Ratings Rating Symbol Value Unit Collector-Emitter Voltage V 40 Vdc CEO Collector-Base Voltage VCBO 60 Vdc Emitter-Base VOltage VEBO 6.0 Vdc Collector Current-Continuous IC 200 mAdc Thermal Characteristics Characteristics Symbol Max Unit Total Device Dissipation TA=

 6.61. Size:346K  willas
 mmbt3904dw1t1.pdf 

FM120-M WILLAS MMBT3904DW1T1 THRU Dual General Purpose Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optim

 6.62. Size:374K  willas
 mmbt3904lt1.pdf 

FM120-M WILLAS MMBT3904LT1 THRU General Purpose Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. RoHS product for packing code suffix "G", SOD-123H Low profile surfa

 6.63. Size:386K  willas
 mmbt3904tt1.pdf 

FM120-M WILLAS THRU MMBT3904TT1 General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features NPN ocess de Batch prSiliconsign, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H FEATURE Low profile surface mounted application in

 6.64. Size:525K  willas
 mmbt3904slt1.pdf 

FM120-M WILLAS MMBT3904SLT1 THRU SOT-923 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline TRANSISTOR (NPN) Features FEATURES Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H SOT 923 Lo

 6.65. Size:1002K  shenzhen
 mmbt3904lt1.pdf 

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT3904LT1 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation 2. 4 PCM 0.2 W (Tamb=25 ) 1. 3 Collector current ICM 0.2 A Collector-base voltage V(BR)CBO 60 V Operating and storage junction temperature range Unit mm TJ, Ts

 6.66. Size:260K  can-sheng
 mmbt3904.pdf 

SOT-23 Plastic-Encapsulate Transistors FEATURES SOT-23 As complementary type, the PNP transistor MMBT3906 is Recommended Epitaxial planar die construction MARKING 1AM MARKING 1AM MARKING 1AM MARKING 1AM 1 BASE MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS (TA=25 unless otherwise noted) MAXIMUM RATINGS 2 EMITTER Symbol Parameter Value Units Symbol Parameter Va

 6.67. Size:265K  can-sheng
 mmbt3904 sot-23.pdf 

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR (NPN) FEATURES Complimentary to MMBT3906 MARKING 1AM MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-

 6.68. Size:819K  blue-rocket-elect
 mmbt3904.pdf 

 6.69. Size:192K  semtech
 mmbt3904.pdf 

MMBT3904 NPN Silicon General Purpose Transistor for switching and amplifier applications. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V Collector Current IC 200 mA Power Dissipation Ptot 350 mW O Junction Temperature Tj 150 C O Storag

 6.70. Size:1042K  first silicon
 mmbt3904ltg.pdf 

MMBT3904LTG General Purpose Transistors Features Package outline Pb-Free Package May be Available. The G-Suffix Denotes a Pb-Free Lead Finish 3 Maximum Ratings 1 Rating Symbol Value Unit 2 Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc SOT 23 Emitter-Base Voltage VEBO 6.0 Vdc Collector Current - Continuous IC 200 mAdc 3 COLLECTOR Thermal Charact

 6.71. Size:1128K  kexin
 mmbt3904.pdf 

SMD Type Transistors NPN Transistors MMBT3904 (KMBT3904) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Complementary to MMBT3906 1 2 Marking 1AM +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 V Collector - Emitter Voltage VCEO 40 V

 6.72. Size:953K  kexin
 mmbt3904t.pdf 

SMD Type Transistors NPN Transistors MMBT3904T (KMBT3904T) SOT-523 U nit m m +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15 0.05 Features Small Package 2 1 Complementary to MMBT3906T 3 0.3 0.05 +0.1 0.5 -0.1 1. Base 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collec

 6.73. Size:1116K  kexin
 mmbt3904w.pdf 

SMD Type Transistors NPN Transistors MMBT3904W Features Collector Current Capability IC=0.2A Collector Emitter Voltage VCEO=40V Complementary to MMBT3906W 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 5 Colle

 6.74. Size:1137K  kexin
 mmbt3904-d.pdf 

SMD Type Transistors NPN Transistors (KMBT3904-D) MMBT3904-D SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Complementary to MMBT3906-D 1 2 Marking 1AM +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 V Collector - Emitter Voltage VC

 6.75. Size:770K  kexin
 mmbt3904dw.pdf 

SMD Type Transistors NPN Transistors MMBT3904DW (KMBT3904DW) Features Epitaxial planar die construction Ideal for low power amplification and switching Dual NPN Transistors Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 5 Collector Current -

 6.76. Size:417K  panjit
 mmbt3904.pdf 

MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR Unit inch(mm) 225 mWatt VOLTAGE 40 Volt POWER SOT-23 FEATURES NPN epitaxial silicon, planar design 0.120(3.04) Collector-emitter voltage VCE = 40V 0.110(2.80) Collector current IC = 200mA Transition frequency fT>300MHz @ IC=10mAdc, VCE=20Vdc,f=100MHz Lead free in compliance with EU RoHS 2.0 0.056(1.40) Gr

 6.77. Size:555K  panjit
 mmbt3904fn3.pdf 

MMBT3904FN3 NPN GENERAL PURPOSE SWITCHING TRANSISTOR Unit inch(mm) DFN 3L POWER VOLTAGE 40 Volt 250 mWatt 0.042(1.05) FEATURES 0.037(0.95) NPN epitaxial silicon, planar design Collector-emitter voltage VCE = 40V Collector current IC = 200mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free) M

 6.78. Size:200K  panjit
 mmbt3904w.pdf 

MMBT3904W NPN GENERAL PURPOSE SWITCHING TRANSISTOR Unit inch(mm) SOT-323 150 mWatt VOLTAGE 40 Volt POWER FEATURES NPN epitaxial silicon, planar design Collector-emitter voltage VCE = 40V 0.087(2.20) Collector current IC = 200mA 0.070(1.80) Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard 0.054(1.35) 0.045(1.15) MEC

 6.79. Size:115K  comchip
 mmbt3904-g.pdf 

General Purpose Transistor MMBT3904-G (NPN) RoHS Device Features SOT-23 -Epitaxial planar die construction 0.120 (3.04) 0.110 (2.80) -As complementary type, the PNP 3 transistor MMBT3904-G is recommended 0.055 (1.40) 0.047 (1.20) 1 2 0.080 (2.04) 0.070 (1.78) Collector 0.007 (0.18) 3 0.003 (0.08) 0.044 (1.11) 0.104 (2.64) 0.035 (0.89) 0.083 (2.10) 1 Base 0.004 (0.100)

 6.80. Size:103K  comchip
 mmbt3904-hf.pdf 

General Purpose Transistor MMBT3904-HF (NPN) RoHS Device Halogen Free SOT-23 Features 0.118(3.00) 0.110(2.80) -Epitaxial planar die construction 3 -As complementary type, the PNP 0.055(1.40) 0.047(1.20) transistor MMBT3904-HF is recommended 1 2 0.006(0.15) 0.079(2.00) Collector 0.002(0.05) 0.071(1.80) 3 0.041(1.05) 0.100(2.55) 0.035(0.90) 0.089(2.25) 1 Base 0.004(0.10

 6.81. Size:259K  galaxy
 mmbt3904.pdf 

Product specification NPN SWITCHING TRANSISTOR MMBT3904 FEATURES Epitaxial planar die construction. Pb Complementary PNP type available Lead-free (MMBT3906). Collector Current Capability I =200mA. CM Collector-emitter Voltage V =40V. CEO MSL 1 APPLICATIONS SOT-23 General switching and amplification ORDERING INFORMATION Type No. Marking Pac

 6.82. Size:910K  globaltech semi
 gstmmbt3904.pdf 

GSTMMBT3904 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Lead(Pb)-Free amplifier and switch. Packages & Pin Assignments GSTMMBT3904F(SOT-23) Pin Description 1 Base 2 Emitter 3 Collector Marking Information P/N Package Part Marking GSTMMBT3904F SOT-23 1AM Ordering Information GS P/N GSTMMBT3904 F Pb Free Co

 6.83. Size:524K  slkor
 mmbt3904.pdf 

MMBT3904 NPN Switching Transistor MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit VCEO 40 Vdc Collector-Emitter Voltage VCBO 60 Vdc Collector-Base Voltage V 6.0 Vdc Emitter-Base Voltage EBO Ic 200 mAdc Collector Current-Continuous THERMAL CHARACTERISTICS THERMAL CHARACTERISTICS THERMAL CHARACTERISTICS THERMAL CHARACTERIST

 6.84. Size:365K  slkor
 mmbt3904m.pdf 

MMBT3904M NPN General Purpose Amplifier Capable of 100m Watts of Power Dissipation and 200mA Ic Operating and Storage Junction Temperatures -55 to 150 Small Outline Surface Mount Package RoHS compliant / Green EMC Device Marking Code MMBT3904M 1N Maximum Ratings Ta = 25 unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60

 6.85. Size:1540K  slkor
 mmbt3904t.pdf 

MMBT3904T NPN Transistor 3 2 Features 1.Base Small Package 2.Emitter 3.Collector Complementary to MMBT3906T 1 Simplified outline(SOT-523) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 200 mA Collecto

 6.86. Size:688K  slkor
 mmbt3904w.pdf 

MMBT3904W NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V Collector Current IC 200 mA Total Power Dissipation Ptot 200 mW O Junction Temperature Tj 150 C O Storage Temperature Range

 6.87. Size:1815K  umw-ic
 mmbt3904.pdf 

R UMW UMW MMBT3904 UMW MMBT3904 UMW MMBT3904 UMW MMBT3904 UMW MMBT3904 NPN Transistors Features SOT 23 Small Package Complementary to MMBT3906T MARKING 1. BASE 2. EMITTER 1AM 3. COLLECTOR Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6

 6.88. Size:826K  born
 mmbt3904.pdf 

MMBT3904 NPN Plastic-Encapsulate Transistor Features Pin Configurations V CE = 40V 3 COLLECTOR I C = 0.2A f T =300MHZ @VCE=20V, IC=10mA,f=100MHz 1 BASE 2 EMITTER General Description As complementary type the PNP transistor MMBT3906 is recommended Epitaxial planar die constructio SOT-23 Plastic Package. Absolute Maximum Ratings @T =25 unless otherwise noted

 6.89. Size:3130K  fuxinsemi
 mmbt3904.pdf 

MMBT3904 TRANSISTOR (NPN) FEATURES Complementary to MMBT3906 MAXIMUM RATINGS (Ta=25 unless otherwise noted) SOT 23 Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA PC Collector Power Dissipation 200 mW R JA Thermal Resistance From Junction To Ambient 625 /W T

 6.90. Size:523K  fuxinsemi
 mmbt3904t.pdf 

 6.91. Size:484K  fms
 mmbt3904.pdf 

NPN SWITCHING TRANSISTOR Formosa MS MMBT3904 TRANSISTOR (NPN) FEATURES Pb Epitaxial planar die construction. Lead-free Complementary PNP type available (MMBT3906). Collector Current Capability Ic=200mA. Collector-emitter Voltage VCEO=40V. APPLICATIONS General switching and amplification SOT-23 ORDERING INFORMATION Type No. Marking Package Code MMBT3904 1AM

 6.92. Size:2020K  high diode
 mmbt3904.pdf 

MMBT3904 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) SOT- 23 Features Complementary to MMBT3906 Marking 1AM Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V V Collector-Emitter Voltage 40 V CEO V Emitter-Base Voltage 6 V C EBO I Collector Current 200 mA C P Collector Power Dissipation 200 mW C R JA Thermal Resistance From Junction

 6.93. Size:1101K  jsmsemi
 mmbt3904.pdf 

MMBT3904 NPN SWITCHING TRANSISTOR FEATURES Epitaxial planar die construction. Complementary PNP type available (MMBT3906). SOT-23 Collector Current Capability ICM =200mA. Collector-emitter Voltage VCEO=40V. MSL 1 APPLICATIONS General switching and amplification ORDERING INFORMATION Type No. Marking Package Code MMBT3904 1AM SOT-23 MAXIMUM RA

 6.94. Size:2179K  mdd
 mmbt3904.pdf 

MMBT3904 TRANSISTOR(NPN) FEA TURES Complementary Type The PNP Transistor MMBT3906 is Recommended Epitaxial Planar Die Construction MARKING 1AM SOT-23 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA PC Collector

 6.95. Size:3334K  msksemi
 mmbt3904t-ms.pdf 

www.msksemi.com MMBT3904T-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (NPN) 3 MMBT3904T-MS 1. BASE FEATURES 2. EMITTER 1 Complementary to MMBT3906T 3. COLLECTOR 2 Small Package SOT-523 MARKING 1N MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 40 V

 6.96. Size:4184K  msksemi
 mmbt3904-ms.pdf 

www.msksemi.com MMBT3904-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (NPN) FEATURES Complementary to MMBT3906-MS MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE 2. EMITTER SOT 23 MARKING 1AM 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Volta

 6.97. Size:431K  powersilicon
 mmbt3904-t3 mmbt3904g-t3.pdf 

MMBT3904 GENERAL PURPOSE TRANSISTORS NPN Silicon FEATURES NPN Silicon Epitaxial Planar Transistor For Switching And Amplifier Applications Collector-emitter Voltage VCE=40V Collector Current IC=200mA MECHANICAL DATA C E Available in SOT-23 Package Solderability MIL-STD-202, Method 208 Full RoHS Compliance B ORDERING INFORMATION PART NUM

 6.98. Size:1133K  pjsemi
 mmbt3904.pdf 

MMBT3904 NPN Transistor Features For Switching and AF Amplifer Applications. Silicon Epitaxial Chip. SOT-23 (TO-236) 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings (T = 25 ) A Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V Collector Current I 200 mA C Power Dissipation P

 6.99. Size:905K  cn salltech
 mmbt3904-l mmbt3904-h.pdf 

 6.100. Size:796K  cn shandong jingdao microelectronics
 mmbt3904-l mmbt3904-h.pdf 

Jingdao Microelectronics co.LTD MMBT3904 MMBT3904 SOT-23 NPN TRANSISTOR 3 FEATURES Complementary to MMBT3906 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Symbol Parameter Value Unit 1.BASE Collector Base Voltage VCBO 60 V 2.EMITTER Collector Emitter Voltage VCEO 40 V 3.COLLECTOR Emitter Base Voltage VEB

 6.101. Size:1619K  cn shikues
 mmbt3904.pdf 

 6.102. Size:793K  cn shikues
 mmbt3904t.pdf 

MMBT3904T NPN Plastic-Encapsulate Transistors FEATURES Complementary to MMBT3906T Small Package MARKING MA MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBO SOT 523 V Collector-Emitter Voltage 40 V CEO 1. BASE V Emitter-Base Voltage 6 V EBO 2. EMITTER I Collector Current 200 mA C 3. COLL

 6.103. Size:1166K  cn shikues
 mmbt3904k.pdf 

MMBT3904K SOT-23 Plastic-Encapsulate Transistors TRANSISTOR(NPN) Features Power Dissipation of 200mW High Stability and High Reliability Mechanical Data Marking 1AM SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 Mounting Position Any Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temperature unless otherwise specified.) Par

 6.104. Size:1302K  cn shikues
 mmbt3904dw.pdf 

MMBT3904DW Descriptions Double silicon NPN transistor in a SOT-363 Plastic Package. Features Low current, Low voltage. Applications General purpose amplifier and switching. Equivalent Circuit Pinning PIN 1 4 Emitter PIN 2 5 Base PIN 3 6 Collector hFE Classifications & Marking See Marking Instructions. REV.08 1 of 6 MMBT3904DW Absolute Maximum Ratings(Ta

 6.105. Size:205K  cn tak cheong
 mmbt3904t.pdf 

TAK CHEONG SEMICONDUCTOR SOT-523 General Purpose Transistor NPN Silicon Surface Mount Plastic Package Green Product Absolute Maximum Ratings (TA = 25 C unless otherwise noted) Symbol Parameter Value Units 3 VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V 2 VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA 1 Power Dissipation PD 200

 6.106. Size:182K  cn tak cheong
 mmbt3904n3.pdf 

TAK CHEONG SEMICONDUCTOR SOT-883 General Purpose Transistor NPN Silicon Surface Mount Plastic Package Green Product Absolute Maximum Ratings (TA = 25 C unless otherwise noted) Symbol Parameter Value Units 3 VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V 2 IC Collector Current 200 mA 1 Power Dissipation PD

 6.107. Size:1062K  wpmtek
 mmbt3904l mmbt3904h.pdf 

Integrated in OVP&OCP products provider MMBT3904 SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBT3906 ; Complementary to MMBT3906 200mW; Power Dissipation of 200mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Sm

 6.108. Size:435K  cn yfw
 mmbt3904 mmbt3904l mmbt3904h mmbt3904j.pdf 

MMBT3904 SOT-23 NPN Transistors 3 2 1.Base Features 2.Emitter 1 3.Collector Complementary to MMBT3906 Marking 1AM Simplified outline(SOT-23) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 V Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 V Collector Current - Continuous IC 0.2 A Collector Power Dis

 6.109. Size:2601K  cn yongyutai
 mmbt3904.pdf 

MMBT3904 TRANSISTOR NPN TRANSISTOR NPN TRANSISTOR NPN TRANSISTOR NPN TRANSISTOR NPN FEATURES Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT3906) Ideal for Medium Power Amplification and Switching SOT-23 MARKING 1AM 1 BASE 2 EMITTER 3 COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Par

 6.110. Size:2950K  cn yongyutai
 mmbt3904t.pdf 

MMBT3904T General Purpose Transistor NPN Silicon Surface Mount Plastic Package Features Simplifies Circuit Design 1. Base RoHS Compliant 2. Emitter Green EMC 3. Collector Marking 1N Maximum Ratings (T =25 C unless otherwise noted) a Symbol Parameter Value Unit V Collector Base Voltage 60 V CBO V Collector Emitter Voltage 40 V CEO V Emitter Base Voltage 6 V EBO

 6.111. Size:1725K  cn yongyutai
 mmbt3904l mmbt3904h.pdf 

MMBT3904 TRANSI STOR (NPN) MARKING Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES Complimentary to MMBT3906 Collector Current Ic=200mA MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current IC 200 mA Collector P

 6.112. Size:925K  cn zre
 mmbt3904l mmbt3904h.pdf 

MMBT3904 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBT3906 ; Complementary to MMBT3906 200mW; Power Dissipation of 200mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Small Outline Plastic Pack

 6.113. Size:1857K  cn twgmc
 mmbt3904.pdf 

MMBT3904 AO3400 SI2305 MMBT3904 TRANSISTOR (NPN) FEATURES Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT3906) Ideal for Medium Power Amplification and Switching SOT-23 MARKING 1AM 1 BASE 2 EMITTER 3 COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Colle

 6.114. Size:997K  cn twgmc
 mmbt3904m.pdf 

MMBT3904M MMBT3904M MMBT3904M SOT-723 MMBT3904M TRANSISTOR (NPN) FEATURE Complementary to MMBT3906M Small Package 1. BASE MARKING 1N 2. EMITTER 3.COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted ) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuou

 6.115. Size:9491K  cn twgmc
 mmbt3904t.pdf 

MMBT3904T MMBT3904T MMBT3904T TRANSISTOR(NPN) MMBT39 0 4T FEATURES SOT 523 Complementary to MMBT3906T Small Package MAXIMUM RATINGS (TA=25 unless otherwise noted) 1. BASE 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 40 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current 200 mA C PC C

 6.116. Size:5582K  cn twgmc
 mmbt3904w.pdf 

MMBT3904W MMBT3904W MMBT3904W MMBT3904W TRANSISTOR(NPN) MMBT39 0 4W for switching and amplifier applications SOT 323 3 1. BASE 1 2. EMITTER 2 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V Collector Current IC 200 mA Total Power

 6.117. Size:2470K  cn tech public
 mmbt3904m.pdf 

 6.118. Size:857K  cn yangzhou yangjie elec
 mmbt3904.pdf 

RoHS COMPLIANT MMBT3904 NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Moisure Sensitivity Level 1 Marking 1AM Off Characteristics Item Symbol Unit Conditions Value Collector-Emitter Voltage* VCEO V IC=1.0mAdc, IB=0 40 Collector-Base Voltage VCBO V IC=10uAdc, IE=0 60 Emitter-Base Voltage VEBO V IE=10uAdc, IC=0 6.0 Collec

 6.119. Size:315K  cn yangzhou yangjie elec
 mmbt3904t.pdf 

RoHS COMPLIANT MMBT3904T NPN General Purpose Amplifier Features Moisture Sensitivity Level 1 Surface mount package ideally Suited for Automatic Insertion Epoxy meets UL-94 V-0 flammability rating, halogen-free Mechanical Data ackage SOT-523 P Terminals Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking 1N Maximum R

 6.120. Size:1948K  eicsemi
 mmbt3904.pdf 

TH09/2479 TH97/2478 IATF 0113686 SGS TH07/1033 www.eicsemi.com MMBT3904 NPN Silicon General Purpose Transistor for switching and amplifier applications. SOT-23 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V Collector Current IC 200 mA Power Dis

 6.121. Size:1025K  cn doeshare
 mmbt3904.pdf 

MMBT3904 MMBT3904 SOT-23 Plastic-Encapsulate Transistors(NPN) General description SOT-23 Plastic-Encapsulate Transistors(NPN) FEATURES Complementary to MMBT3906 Power Dissipation of 200mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 DEVICE MARKING CODE Device Type Device Marking MMBT3904 1AM . Maximum R

 6.122. Size:1115K  cn doeshare
 mmbt3904m.pdf 

MMBT3904M MMBT3904M NPN General Purpose Transistor General description NPN General Purpose Transistor FEATURES SOT-723 General Purpose Transistors. VCEO 40V Ic 200mA PC 100mW Complementary to MMBT3906M Small Outline Surface Mount Package. RoHS Compliant / Green EMC. Type MMBT3904M Marking 1N Absolute Maximum Ratings(Ta=25 ) Para

 6.123. Size:731K  cn doeshare
 mmbt3904t.pdf 

MMBT3904T MMBT3904T SOT-523 Silicon General Purpose Transistor (NPN) General description SOT-523 Silicon General Purpose Transistor (NPN) FEATURES Simplifies Circuit Design RoHS Compliant Green EMC Matte Tin(Sn) Lead Finish Weight approx. 0.002g Absolute Maximum Ratings (TA = 25 C unless otherwise noted) Symbol Parameter Value Units VCBO Collector

 6.124. Size:1275K  cn doeshare
 mmbt3904w.pdf 

MMBT3904W MMBT3904W SOT-323 Silicon General Purpose Transistor (NPN) General description SOT-323 Silicon General Purpose Transistor (NPN) FEATURES Simplifies Circuit Design RoHS Compliant Green EMC Matte Tin(Sn) Lead Finish Weight approx. 0.001g Absolute Maximum Ratings (TA = 25 C unless otherwise noted) Symbol Parameter Value Units VCBO Collector

 6.125. Size:849K  cn doeshare
 mmbt3904c.pdf 

MMBT3904C MMBT3904C SOT-883 Silicon General Purpose Transistor (NPN) General description SOT-883 Silicon General Purpose Transistor (NPN) FEATURES Simplifies Circuit Design RoHS Compliant Green EMC Matte Tin(Sn) Lead Finish Weight approx. 0.001g Absolute Maximum Ratings (TA = 25 C unless otherwise noted) Symbol Parameter Value Units VCBO Collector

 6.126. Size:1223K  cn cbi
 mmbt3904.pdf 

TRANSISTOR (NPN) FEATURES Complementary Type The PNP Transistor MMBT3906 is Recommended SOT-23 Epitaxial Planar Die Construction 1 BASE 2 EMITTER 3 COLLECTOR MARKING 1AM MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6

 6.127. Size:604K  cn cbi
 mmbt3904t.pdf 

SOT-523 Plastic-Encapsulate Transistors MMBT3904T TRANSISTOR (NPN) FEATURES SOT 523 Complementary to MMBT3906T Small Package MARKING 1N MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 60 V CBO 2. EMITTER VCEO Collector-Emitter Voltage 40 V 3. COLLECTOR V Emitter-Base Voltage 6 V EBO I Colle

 6.128. Size:1116K  cn cbi
 mmbt3904w.pdf 

MMBT3904W NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications Marking Code 1E O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V Collector Current IC 200 mA Total Power Dissipation Ptot 200 mW O Junction Temperature Tj 150 C O Stor

 6.129. Size:1013K  cn fosan
 mmbt3904.pdf 

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD MMBT3904 MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO 40 Vdc - Collector-Base Voltage VCBO 40 Vdc - Emitter-Base Voltage VEBO 6.0 Vdc - Co

 6.130. Size:1848K  cn goodwork
 mmbt3904.pdf 

MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR 40Volts POWER 225mWatts VOLTAGE FEATURES NPN epitaxial silicon, planar design. Collector-emitter voltage VCE=40V. Collector current IC=0.2A. ansition frequency fT>300MHz @ Tr IC=10mAdc, VCE=20Vdc, f=100MHz. In compliance with ER RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 Terminals So

 6.131. Size:656K  cn hottech
 mmbt3904.pdf 

MMBT3904 BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to MMBT3906 Surface Mount device MECHANICAL DATA SOT-23 Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Value Unit Collector-Base Voltage V 60 V CBO Collec

 6.132. Size:815K  cn idchip
 mmbt3904.pdf 

NPN MMBT3904 MMBT3904 TRANSISTOR (NPN) FEATURES Complementary Type The PNP Transistor MMBT3906 is Recommended SOT-23 Epitaxial Planar Die Construction 1 BASE 2 EMITTER 3 COLLECTOR MARKING 1AM MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Volta

 6.133. Size:1280K  cn juxing
 mmbt3904.pdf 

MMBT3904 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES As complementary type the PNP transistor MMBT3906 is recommended Epitaxial planar die construction MARKING 1AM SOT-23 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V 1. BASE VEBO Emitter-Base Vol

 6.134. Size:1449K  cn yfsemi
 mmbt3904l mmbt3904h.pdf 

YFSEMI ELECTRON SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR (NPN) SOT 23 FEATURES Complementary to MMBT3906 MARKING 1AM MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE VCBO Collector-Base Voltage 60 V 2. EMITTER VCEO Collector-Emitter Voltage 40 V 3. COLLECTOR VEBO Emitter-Base Voltage 6 V IC Coll

 6.135. Size:265K  cn jksemi
 mmbt3904.pdf 

MMBT3904 Silicon Epitaxial Planar Transistor(NPN) C E Features High Collector Current B Complementary To MMBT3906 SOT-23 Excel lent HFE Li nea r l ty Absolute Maximum Ratings* unless otherwise noted TA = 25 C Parameter Value Units Symbol V Collector-Base Voltage 60 CBO V VCEO 40 V Collector-Emitter Voltage V EBO Emitter-Base Voltage 6 V IC mA Collector Current -Continuo

 6.136. Size:218K  inchange semiconductor
 mmbt3904.pdf 

isc Silicon NPN Transistor MMBT3904 DESCRIPTION Low Voltage Use Ultra Super Mini Mold Package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Telephony and professional communication equipment. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 40 V C

 6.137. Size:1057K  cn shenzhen jingyang
 mmbt3904.pdf 

MMBT3904 NPN SWITCHING TRANSISTOR FEATURES Pb Epitaxial planar die construction. Lead-free Complementary PNP type available (MMBT3906). Collector Current Capability ICM =200mA. Collector-emitter Voltage VCEO=40V. MSL 3 APPLICATIONS General switching and amplification SOT-23 ORDERING INFORMATION Type No. Marking Package Code MMBT3904 1AM SOT-23 MAXIMUM RATING @ Ta=