STB1132PNP Silicon TransistorDescription PIN Medium power amplifier Features PC(Collector power dissipation) =1W(Ceramic substate of 2500.8t used) Low collector saturation voltage : VCE(sat)=-0.2V(Typ.) Complementary pair with STD1664 SOT-89 Ordering Information Type NO. Marking Package Code A1 STB1132 SOT-89 YWW A1: DEVICE CODE, YWW(Y

STB11NM80, STF11NM80STP11NM80, STW11NM80N-channel 800 V, 0.35 , 11 A MDmesh Power MOSFETTO-220, TO-220FP, D2PAK, TO-247FeaturesRDS(on) Type VDSS RDS(on)*Qg IDmax313STB11NM802DPAK1STF11NM80TO-247800 V

STB11N52K3, STF11N52K3 STP11N52K3N-channel 525 V, 0.41 , 10 A SuperMESH3 Power MOSFET in DPAK,TO-220FP and TO-220 packagesDatasheet production dataFeaturesTABRDS(on) Order codes VDSS max. ID PwSTB11N52K3 125 W 3 32 21 1STF11N52K3 525 V

STB11N65M5, STD11N65M5 STF11N65M5, STP11N65M5DatasheetN-channel 650 V, 0.43 typ., 9 A MDmesh M5 Power MOSFETs in a DPAK, DPAK, TO-220FP and TO-220 packages FeaturesTABTAB32 VDS @311RDS(on)max. IDOrder codeDPAK2D PAKTjmax.TABSTB11N65M5STD11N65M5710 V 0.48 9 A3231 STF11N65M521TO-220TO-220FPSTP11N65M5D(2, TAB) Extremel

STB11NM60T4, STP11NM60DatasheetN-channel 600 V, 0.4 typ., 11 A, MDmesh II Power MOSFETs in DPAK and TO-220 packagesFeaturesVDSSTABRDS(on) max. IDTAB Order codes Package(@ TJmax)STB11NM60T4 DPAK3650 V 0.45 11 A132 STP11NM60 TO-220D PAK TO-220 21 100% avalanche tested Low input capacitance and gate charge Low gate input resistanceD(2

STP11NM60ASTP11NM60AFP - STB11NM60A-1N-CHANNEL 600V - 0.4 - 11A TO-220/TO-220FP/I2PAKMDmeshPower MOSFETTYPE VDSS RDS(on) IDSTP11NM60A 600 V

STB11NM60FD - STB11NM60FD-1STP11NM60FD - STP11NM60FDFPN-channel 600V - 0.40 - 11A - TO-220/TO-220FP/D2PAK/I2PAKFDmesh Power MOSFET (with fast diode)General featuresType VDSS RDS(on) ID32 3STB11NM60FD 600V

STB11NM60FD - STB11NM60FD-1STP11NM60FD - STP11NM60FDFPN-channel 600V - 0.40 - 11A - TO-220/TO-220FP/D2PAK/I2PAKFDmesh Power MOSFET (with fast diode)General featuresType VDSS RDS(on) ID32 3STB11NM60FD 600V

STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5N-channel 650 V, 0.43 typ., 9 A MDmesh V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packagesDatasheet production dataFeaturesTABTAB2VDSS @ RDS(on) 2 3Order codes ID 31TJmax max 132DPAKD2PAK 1STB11N65M5TO-220FPSTD11N65M5TABSTF11N65M5 710 V

STx11NM60NN-channel 600 V, 0.37 , 10 A MDmesh II Power MOSFETTO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) 3Type ID 323(@TJmax) max12 11STB11NM60N-1 650 V 0.45 10 ADPAKTO-220IPAKSTB11NM60N 650 V 0.45 10 ASTD11NM60N 650 V 0.45 10 ASTD11NM60N-1 650 V 0.45 10 ASTF11NM60N 650 V 0.45 10 A(1)STP11NM60N 650 V 0.45

STx11NM60NN-channel 600 V, 0.37 , 10 A MDmesh II Power MOSFETTO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) 3Type ID 323(@TJmax) max12 11STB11NM60N-1 650 V 0.45 10 ADPAKTO-220IPAKSTB11NM60N 650 V 0.45 10 ASTD11NM60N 650 V 0.45 10 ASTD11NM60N-1 650 V 0.45 10 ASTF11NM60N 650 V 0.45 10 A(1)STP11NM60N 650 V 0.45

STB11NM80, STF11NM80STI11NM80, STP11NM80, STW11NM80N-channel 800 V, 0.35 , 11 A MDmesh Power MOSFETin DPAK, TO-220FP, IPAK, TO-220, TO-247FeaturesRDS(on) Order codes VDSS RDS(on)*Qg IDmax3312STB11NM801DPAKTO-220FPSTF11NM80STI11NM80 800 V

STx11NM60NN-channel 600 V, 0.37 , 10 A MDmesh II Power MOSFETTO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) 3Type ID 323(@TJmax) max12 11STB11NM60N-1 650 V 0.45 10 ADPAKTO-220IPAKSTB11NM60N 650 V 0.45 10 ASTD11NM60N 650 V 0.45 10 ASTD11NM60N-1 650 V 0.45 10 ASTF11NM60N 650 V 0.45 10 A(1)STP11NM60N 650 V 0.45

STB11NK40Z, STP11NK40ZFPSTP11NK40ZN-channel 400 V, 0.49 , 9 A, TO-220, TO-220FP, D2PAKZener-protected SuperMESHTM Power MOSFETFeaturesType VDSS RDS(on) ID PwSTB11NK40Z 400V

STP11NK40Z - STP11NK40ZFPSTB11NK40ZN-CHANNEL 400V - 0.49 - 9A TO-220/TO-220FP/D2PAKZener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP11NK40Z 400 V

STB11NM80, STF11NM80STI11NM80, STP11NM80, STW11NM80N-channel 800 V, 0.35 , 11 A MDmesh Power MOSFETin DPAK, TO-220FP, IPAK, TO-220, TO-247FeaturesRDS(on) Order codes VDSS RDS(on)*Qg IDmax3312STB11NM801DPAKTO-220FPSTF11NM80STI11NM80 800 V

STP11NM60 - STP11NM60FPSTB11NM60 - STB11NM60-1N-channel 650V @ TJmax - 0.4 - 11A TO-220/FP/D2PAK/I2PAKMDmesh Power MOSFETGeneral featuresVDSSType RDS(on) ID(@TJ=TJmax)332211STP11NM60 650V

STB11NK50Z - STP11NK50ZFPSTP11NK50ZN-channel 500 V, 0.48 , 10 A TO-220, TO-220FP, D2PAKZener-protected SuperMESHTM Power MOSFETFeaturesRDS(on) Type VDSS ID PwmaxSTB11NK50Z 500 V

STB11NB40N - CHANNEL ENHANCEMENT MODEPowerMESH MOSFETTYPE VDSS RDS(on) IDSTB11NB40 400 V

STP11NM60 - STP11NM60FPSTB11NM60 - STB11NM60-1N-channel 650V @ TJmax - 0.4 - 11A TO-220/FP/D2PAK/I2PAKMDmesh Power MOSFETGeneral featuresVDSSType RDS(on) ID(@TJ=TJmax)332211STP11NM60 650V

STB11NK50Z - STP11NK50ZFPSTP11NK50ZN-channel 500 V, 0.48 , 10 A TO-220, TO-220FP, D2PAKZener-protected SuperMESHTM Power MOSFETFeaturesRDS(on) Type VDSS ID PwmaxSTB11NK50Z 500 V

STB11NK40Z, STP11NK40ZFPSTP11NK40ZN-channel 400 V, 0.49 , 9 A, TO-220, TO-220FP, D2PAKZener-protected SuperMESHTM Power MOSFETFeaturesType VDSS RDS(on) ID PwSTB11NK40Z 400V

STB11NM65N - STF11NM65NSTI11NM65N-STP11NM65N-STW11NM65NN-channel 650V - 0.33 - 12A - TO-220/FP- D2/I2PAK - TO-247Second generation MDmesh Power MOSFETFeaturesVDSS RDS(on) Type ID(@TJmax) Max32312STI11NM65N 710 V

STB1188PNP Silicon TransistorDescription PIN Connection Medium power amplifier Features PC (Collector power dissipation)=1W (Ceramic substrate of 2500.8t used) Low collector saturation voltage : VCE(sat)=-0.5V (Typ.) Complementary pair with STD1766 SOT-89 Ordering Information Type NO. Marking Package Code B1 STB1188 SOT-89 YWW B1: Devic

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STB11NM60FDFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU