MJE13001. Аналоги и основные параметры
Наименование производителя: MJE13001
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.75 W
Макcимально допустимое напряжение коллектор-база (Ucb): 600 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 0.2 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 8 MHz
Статический коэффициент передачи тока (hFE): 10
Корпус транзистора: TO-92
SOT-89
Аналоги (замена) для MJE13001
- подборⓘ биполярного транзистора по параметрам
MJE13001 даташит
..1. Size:208K utc
mje13001.pdf 
UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR FEATURES * Collector-base voltage V(BR)CBO=600V * Collector current IC=0.2A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 - MJE13001G-x-AB3-A-R SOT-89 E C B Tape Reel - MJE13001G-x-AB3-F-R SOT-89 B C E Tape Reel MJE13001
0.1. Size:191K utc
mje13001-p.pdf 
UNISONIC TECHNOLOGIES CO., LTD MJE13001-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR FEATURES * Collector-base voltage V(BR)CBO=600V * Collector current IC=0.2A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MJE13001-PL-x-T92-B MJE13001-PG-x-T92-B TO-92 B C E Tape Box MJE13001-PL-x-T92-K MJE13001-PG-x-T92-K
0.2. Size:46K hsmc
hmje13001.pdf 
Spec. No. HA200213 HI-SINCERITY Issued Date 2002.06.01 Revised Date 2005.02.05 MICROELECTRONICS CORP. Page No. 1/4 HMJE13001 NPN Triple Diffused Planar Type High Voltage Transistor Description The HMJE13001 is a medium power transistor designed for use in switching applications. TO-92 Features High breakdown voltage Low collector saturation voltage Fast switch
0.5. Size:765K blue-rocket-elect
mje13001c1.pdf 
MJE13001C1 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications , , High frequency electronic li
0.6. Size:238K foshan
mje13001e2.pdf 
MJE13001E2(3DD13001E2) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.45 A C P (Ta=25 ) 1.0 W C T 150 j T -55 150
0.7. Size:237K foshan
mje13001e1.pdf 
MJE13001E1(3DD13001E1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.45 A C P (Ta=25 ) 1.0 W C T 150 j T -55 150
0.8. Size:243K foshan
mje13001de1.pdf 
MJE13001DE1(3DD13001DE1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600
0.9. Size:163K foshan
mje13001b1.pdf 
MJE13001B1(3DD13001B1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V
0.10. Size:153K foshan
mje13001a2.pdf 
MJE13001A2(3DD13001A2) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.17 A C P (Ta=25 ) 0.8 W C T 150 j T -55 150 stg
0.11. Size:170K foshan
mje13001c1.pdf 
MJE13001C1(3DD13001C1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit VCBO 600 V VCEO 400 V VEBO 9.0 V IC 0.25 A PC(Ta=25 ) 1.0 W Tj 150 Tstg -55 150 /Electrical charac
0.12. Size:187K foshan
mje13001at.pdf 
MJE13001AT(3DD13001AT) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.17 A C P (Ta=25 ) 0.8 W C T 150 j T -55 150 stg
0.13. Size:147K foshan
mje13001a1.pdf 
MJE13001A1(3DD13001A1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.17 A C P (Ta=25 ) 0.8 W C T 150 j T -55 150 stg
0.14. Size:180K foshan
mje13001ct.pdf 
MJE13001CT(3DD13001CT) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.25 A C P (Ta=25 ) 1.0 W C T 150 j T -55 150 stg
0.15. Size:188K foshan
mje13001c0.pdf 
MJE13001C0(3DD13001C0) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit VCBO 600 V VCEO 400 V VEBO 9.0 V IC 0.25 A PC(Ta=25 ) 0.65 W Tj 150 Tstg -55 150 /Electrical chara
0.16. Size:180K foshan
mje13001c2.pdf 
MJE13001C2(3DD13001C2) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.25 A C P (Ta=25 ) 1.0 W C T 150 j T -55 150 stg
0.17. Size:159K foshan
mje13001a0.pdf 
MJE13001A0(3DD13001A0) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.17 A C P (Ta=25 ) 0.5 W C T 150 j T -55 150 stg
Другие транзисторы: 4124D, 4126D, 4128D, 5302D, C6084, D4120P, D65H2, HJ44H11, A1013, MJE13001P, MJE13002-E, MJE13003D, MJE13003DP, MJE13003-E, MJE13003P, MJE13005DK, MJE13005K
