UNISONIC TECHNOLOGIES CO., LTD MPSA92M PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES * Collector-Emitter voltage: V =-300V CEO* Collector Dissipation: P =625mW C(MAX)* Low collector-Emitter saturation voltage 1TO-92 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3MPSA92ML-T92-B MPSA92MG-T92-B TO

Spec. No. : HE6354HI-SINCERITYIssued Date : 1993.01.15Revised Date : 2005.02.05MICROELECTRONICS CORP.Page No. : 1/4HMPSA92MPNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HMPSA92M is designed for application as a video output to drive color CRT, oras a dialer circuit in electronics telephone.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature......

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPSA92/DHigh Voltage Transistors*MPSA92PNP SiliconMPSA93COLLECTOR3 *Motorola Preferred Device2BASE1EMITTER1MAXIMUM RATINGS23Rating Symbol MPSA92 MPSA93 UnitCASE 2911, STYLE 1CollectorEmitter Voltage VCEO 300 200 VdcTO92 (TO226AA)CollectorBase Voltage VCBO 300 200 Vd

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPSA92/DHigh Voltage Transistors*MPSA92PNP SiliconMPSA93COLLECTOR*Motorola Preferred Device32BASE1EMITTER1MAXIMUM RATINGS23Rating Symbol MPSA92 MPSA93 UnitCASE 2904, STYLE 1CollectorEmitter Voltage VCEO 300 200 VdcTO92 (TO226AA)CollectorBase Voltage VCBO 300 200 V

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186MPSA92PNP high-voltage transistor1999 Apr 27Product specificationSupersedes data of 1997 Apr 22Philips Semiconductors Product specificationPNP high-voltage transistor MPSA92FEATURES PINNING Low current (max. 500 mA)PIN DESCRIPTION High voltage (max. 300 V).1 collector2 baseAPPLICATIONS3 emitter

MPSA92 MMBTA92 PZTA92CCEECBC TO-92BSOT-23BSOT-223EMark: 2DPNP High Voltage AmplifierThis device is designed for high voltage driver applications.Sourced from Process 76.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 300 VVCBO Collector-Base Voltage 300 VVEBO Emitter-Base Voltage 5.0

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MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMPSA92Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Through Hole PackagePNP Silicon High Operating & Storage Temperature: -55C to +150C Marking : A92Voltage Transistor Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ord

MPSA92, MPSA93High Voltage TransistorsPNP SiliconFeatureshttp://onsemi.com Pb-Free Packages are Available*MAXIMUM RATINGSRating Symbol Value UnitTO-92Collector-Emitter Voltage VCEO Vdc(TO-226AA)-200MPSA931CASE 29-111-3002MPSA92 233Collector-Base Voltage VCBO Vdc STRAIGHT LEAD BENT LEAD-200 BULK PACK TAPE & REELMPSA93-300AMMO PACKMPSA92Emi

UTC MPSA92 / 93 PNP EPITAXIAL SILICON TRANSISTORHIGH VOLTAGE PNPTRANSISTORDESCRIPTION The UTC MPSA92/93 are high voltage PNPtransistors, designed for telephone signal switchingand for high voltage amplifier.FEATURES1* High Collector-Emitter voltage: VCEO=-300V(UTC MPSA92) VCEO=-200V(UTC MPSA93)*Collector Dissipation:TO-92 Pc(max)=625mW1:EMITTER 2:BASE 3:COLLECTOR

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR EPITAXIAL TRANSISTOR MPSA92TO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with "T"CBEHigh Voltage TransistorsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITSVCBOCollector Base Voltage 300 VVCEOCollector Emitter Voltage 300 V

SEMICONDUCTOR MPSA92/93TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION.B CFEATURESComplementary to MPSA42/43.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDMAXIMUM RATING (Ta=25)D 0.45E 1.00CHARACTERISTIC SYMBOL RATING UNITF 1.27G 0.85MPSA92 -300 H 0.45Collector-Base_VCBO HV J 14.00 + 0.50

MPSA92High-Voltage PNP TransistorsP b Lead(Pb)-FreeTO-921. EMITTER122. BASE33. COLLECTORABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating SymbolValue UnitCollector-Emitter Voltage VCEO -305 VdcCollector-Base Voltage VCBO -310 VdcEmitter-Base Voltage VEBO-5.0 VdcCollector Current IC-500 mAdcPD 0.625Total Device Dissipation T =25 C WAJunction Temperature T 150

Spec. No. : HE6352HI-SINCERITYIssued Date : 1992.12.15Revised Date : 2004.07.21MICROELECTRONICS CORP.Page No. : 1/5HMPSA92PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HMPSA92 is designed for application as a video output to drive color CRT, oras a dialer circuit in electronics telephone.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature .......

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors MPSA92 TRANSISTOR (PNP) TO-92 FEATURES 1. EMITTER Power dissipation 2. BASE PCM: 0.625 W (Tamb=25) 3. COLLECTOR Collector current ICM: -0.5 A 1 2 3 Collector-base voltage V(BR)CBO: -300 V Operating and storage junction temperature range TJ, Tstg: -55 to +150

MPSA92 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features , ,, MPSA42 High voltage low saturation, low collector output capacitance, complementary pair with MPSA42. / Applications

MPSA92I(BR3DG92I) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-251 PNP Silicon PNP transistor in a TO-251 Plastic Package. / Features ,,, MPSA42I(BR3CG42I) High voltage, Low saturation voltage, low collector capacitance output, complementary pair with MPSA42I(BR3CG42I).

MPSA92D(BR3CG92D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 PNP Silicon PNP transistor in a TO-252 Plastic Package. / Features ,,, MPSA42D(BR3DG42D) High voltage, low saturation voltage, low collector output capacitance, complementary pair with MPSA42D(BR3DG42D).

MPSA92 / 93 PNP Silicon Expitaxial Planar Transistor for high voltage switching and amplifier applications. As complementary type the NPN transistor MPSA42 and MPSA 43 are recommended. On special request, these transistors can be 1. Emitter 2. Base 3. Collector manufactured in different pin configurations. TO-92 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Paramete

SEMICONDUCTORMPSA92TECHNICAL DATAMPSA92 TRANSISTOR (PNP)B CFEATURES High voltage DIM MILLIMETERSA 4.70 MAXEB 4.80 MAXGC 3.70 MAXDD 0.55 MAXE 1.00MAXIMUM RATINGS (Ta=25 unless otherwise noted) F 1.27G 0.85H 0.45Symbol Parameter Value Unit _HJ 14.00 0.50+L 2.30F FVCBO Collector-Base Voltage -300 V M 0.51 MAXVCEO Collector-Emitter Voltage