Справочник транзисторов. DTC115E

 

Биполярный транзистор DTC115E - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: DTC115E
   Маркировка: CB5E
   Тип материала: Si
   Полярность: Pre-Biased-NPN
   Встроенный резистор цепи смещения R1 = 100 kOhm
   Встроенный резистор цепи смещения R2 = 100 kOhm
   Соотношение сопротивлений R1/R2 = 1
   Максимальная рассеиваемая мощность (Pc): 0.2 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 250 MHz
   Статический коэффициент передачи тока (hfe): 82
   Корпус транзистора: SOT-23 SOT-323 SOT-523

 Аналоги (замена) для DTC115E

 

 

DTC115E Datasheet (PDF)

 ..1. Size:146K  utc
dtc115e.pdf

DTC115E
DTC115E

UNISONIC TECHNOLOGIES CO., LTD DTC115E NPN SILICON TRANSISTOR NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input. EQUIVALENT CIRCUIT ORDERING INFORMATION Ordering Number Pin Assignment Package Packing

 0.1. Size:182K  philips
pdtc115e series.pdf

DTC115E
DTC115E

DISCRETE SEMICONDUCTORS DATA SHEETPDTC115E seriesNPN resistor-equipped transistors; R1 = 100 k, R2 = 100 kProduct data sheet 2004 Aug 06Supersedes data of 2004 Apr 06NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC115E seriesR1 = 100 k, R2 = 100 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI

 0.2. Size:138K  nxp
pdtc115eef pdtc115ek pdtc115es.pdf

DTC115E
DTC115E

DISCRETE SEMICONDUCTORS DATA SHEETPDTC115E seriesNPN resistor-equipped transistors; R1 = 100 k, R2 = 100 kProduct data sheet 2004 Aug 06Supersedes data of 2004 Apr 06NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC115E seriesR1 = 100 k, R2 = 100 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI

 0.3. Size:70K  rohm
dtc115eka dtc115esa dtc115eua.pdf

DTC115E
DTC115E

DTC115EM / DTC115EE / DTC115EUATransistors DTC115EKA / DTC115ESADigital transistors (built-in resistors)DTC115EM / DTC115EE / DTC115EUADTC115EKA / DTC115ESA Equivalent circuit Features1) Built-in bias resistors enable the configuration of an inverter circuitR1 OUTwithout connecting external input resistors (see the equivalentINcircuit).R22) The bias resistors consist o

 0.4. Size:180K  rohm
dtc115eeb.pdf

DTC115E
DTC115E

100mA / 50V Digital transistors (with built-in resistors) DTC115EEB Applications Dimensions (Unit : mm) EMT3FInverter, Interface, Driver Features 1) Built-in bias resistors enable the configuration of (3)an inverter circuit without connecting external input resistors (see equivalent circuit). 2) Each bias resistor is a thin-film resistor. Since they are completely insu

 0.5. Size:45K  rohm
dtc115ee-eua-eka-esa 29 sot346-323-416.pdf

DTC115E

(94S-522-A115E)

 0.6. Size:1384K  rohm
dtc115eefra dtc115ekafra dtc115emfha dtc115euafra.pdf

DTC115E
DTC115E

DTC115E seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC50VIC(MAX.)100mA R1100kDTC115EM DTC115EEBR2 (SC-105AA) (SC-89)100k EMT3 UMT3lFeaturesl1) Built-In Biasing Resistors, R1 = R2 = 100k 2) Built-in bias resistors enable the configuration of

 0.7. Size:181K  rohm
dtc115em.pdf

DTC115E
DTC115E

100mA / 50V Digital transistors (with built-in resistors) DTC115EM / DTC115EE / DTC115EUA / DTC115EKA Applications Inner circuit Inverter, Interface, Driver R1 OUTINR2 Features GND1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit). IN OUT2) The bias resistors consist of t

 0.8. Size:995K  rohm
dtc115eca.pdf

DTC115E
DTC115E

DTC115ECADatasheetNPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor)lOutlinelParameter Value SOT-23VCC50VIC(MAX.)100mA R1100k R2 (SST3) 100k lFeatures lInner circuitl l1) Built-In Biasing Resistors, R1 = R2 = 100k2) Built-in bias resistors enable th

 0.9. Size:545K  diodes
ddtc123ee ddtc143ee ddtc114ee ddtc124ee ddtc144ee ddtc115ee.pdf

DTC115E
DTC115E

DDTC (R1 = R2 SERIES) EE NPN PRE-BIASED TRANSISTOR IN SOT523 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT523 Complementary PNP Types Available (DDTA) Case Material: Molded Plastic, Green Molding Compound Built-In Biasing Resistors, R1 = R2 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes

 0.10. Size:178K  diodes
ddtc115eka.pdf

DTC115E
DTC115E

DDTC (R1 = R2 SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SC-59 Complementary PNP Types Available (DDTA) Dim Min Max Built-In Biasing Resistors, R1 = R2 A 0.35 0.50 Lead Free/RoHS Compliant (Note 2) "Green" Device, Note 3 and 4 B C B 1.50 1.70 C 2.70 3.00 D 0.95 Mechanical Data GG

 0.11. Size:352K  diodes
ddtc115ee.pdf

DTC115E
DTC115E

DDTC (R1 = R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1 = R2 Dim Min Max Typ B C Lead Free/RoHS Compliant (Note 1) TOP VIEWA 0.15 0.30 0.22 "Green" Device (Note 3 and 4) B 0.75 0.85 0.80 C 1.45 1.75 1.60 M

 0.12. Size:89K  diodes
ddtc115eua.pdf

DTC115E
DTC115E

DDTC (R1 = R2 SERIES) UANPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Product Summary Features and Benefits Epitaxial Planar Die Construction Part Number R1, R2 (NOM) Complementary PNP Types Available (DDTA) DDTC123EUA 2.2K Built-In Biasing Resistors, R1 = R2 DDTC143EUA 4.7K Lead Free, RoHS Compliant (Note 1) Halogen and Antimony Free "Gr

 0.13. Size:99K  diodes
ddtc123eca ddtc143eca ddtc114eca ddtc124eca ddtc144eca ddtc115eca.pdf

DTC115E
DTC115E

DDTC(R1 = R2 SERIES) CANPN PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTORFeatures Mechanical Data Epitaxial Planar Die Construction Case: SOT23 Complementary PNP Types Available (DDTA) Case material: Molded Plastic. Green Molding Compound. Built-In Biasing Resistors, R1 = R2 Classification Rating 94V-0 Totally Lead-Free & Fully RoHS complia

 0.14. Size:140K  onsemi
dtc115em3.pdf

DTC115E
DTC115E

MUN2236, MMUN2236L,MUN5236, DTC115EE,DTC115EM3Digital Transistors (BRT)R1 = 100 kW, R2 = 100 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)device and its external resistor bias network. The Bias Resistor PIN 1R1BASETransistor (BRT) conta

 0.15. Size:144K  onsemi
dtc114eet1g dtc114tet1g dtc114yet1g dtc115eet1g dtc123eet1g.pdf

DTC115E
DTC115E

DTC114EET1 Series,SDTC114EET1 SeriesBias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlehttp://onsemi.comdevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two r

 0.16. Size:82K  onsemi
dtc115em3t5g.pdf

DTC115E
DTC115E

DTC114EM3T5G SeriesDigital Transistors (BRT)NPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The digital transistorhttp://onsemi.comcontains a single transistor with a monolithic bias network consistingof two resistors; a series base resis

 0.17. Size:378K  cystek
dtc115ec3.pdf

DTC115E
DTC115E

Spec. No. : C356C3 Issued Date : 2011.11.03 CYStech Electronics Corp.Revised Date : 2014.03.04 Page No. : 1/6 NPN Digital Transistors (Built-in Resistors) DTC115EC3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors w

 0.18. Size:181K  cystek
dtc115en3.pdf

DTC115E
DTC115E

Spec. No. : C356N3 Issued Date : 2004.02.26 CYStech Electronics Corp.Revised Date : 2007.07.12 Page No. : 1/4 NPN Digital Transistors (Built-in Resistors) DTC115EN3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors wi

 0.19. Size:327K  cystek
dtc115ey3.pdf

DTC115E
DTC115E

Spec. No. : C356Y3 Issued Date : 2011.11.03 CYStech Electronics Corp.Revised Date : Page No. : 1/6 NPN Digital Transistors (Built-in Resistors) DTC115EY3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complete

 0.20. Size:545K  lrc
ldtc114em3t5g ldtc124em3t5g ldtc144em3t5g ldtc114ym3t5g ldtc114tm3t5g ldtc143tm3t5g ldtc123em3t5g ldtc143em3t5g ldtc143zm3t5g ldtc124xm3t5g ldtc123jm3t5g ldtc115em3t5g ldtc144wm3t5g ldtc144tm3t5g.pdf

DTC115E
DTC115E

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsNPN Silicon Surface Mount TransistorsSeriesLDTC114EM3T5GLDTC114EM3T5GS-LDTC114EM3T5G SeriesWith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic

 0.21. Size:545K  lrc
ldtc143em3t5g ldtc143zm3t5g ldtc124xm3t5g ldtc123jm3t5g ldtc115em3t5g ldtc144wm3t5g ldtc144tm3t5g.pdf

DTC115E
DTC115E

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsNPN Silicon Surface Mount TransistorsSeriesLDTC114EM3T5GLDTC114EM3T5GS-LDTC114EM3T5G SeriesWith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic

 0.22. Size:103K  chenmko
chdtc115eugp.pdf

DTC115E
DTC115E

CHENMKO ENTERPRISE CO.,LTDCHDTC115EUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 20 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-70/SOT-323)SC-70/SOT-323* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation c

 0.23. Size:70K  chenmko
chdtc115ekgp.pdf

DTC115E
DTC115E

CHENMKO ENTERPRISE CO.,LTDCHDTC115EKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 20 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23)SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

 0.24. Size:54K  chenmko
chdtc115eegp.pdf

DTC115E
DTC115E

CHENMKO ENTERPRISE CO.,LTDCHDTC115EEGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 20 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416)SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation c

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: CA3081EX | 2N5991 | 104NU70

 

 
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