Справочник транзисторов. DTC124E

 

Биполярный транзистор DTC124E - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: DTC124E
   Маркировка: CC4E
   Тип материала: Si
   Полярность: Pre-Biased-NPN
   Встроенный резистор цепи смещения R1 = 22 kOhm
   Встроенный резистор цепи смещения R2 = 22 kOhm
   Соотношение сопротивлений R1/R2 = 1
   Максимальная рассеиваемая мощность (Pc): 0.625 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 250 MHz
   Статический коэффициент передачи тока (hfe): 56
   Корпус транзистора: TO-92 SOT-23 SOT-323 SOT-523

 Аналоги (замена) для DTC124E

 

 

DTC124E Datasheet (PDF)

 ..1. Size:195K  utc
dtc124e.pdf

DTC124E
DTC124E

UNISONIC TECHNOLOGIES CO., DTC124E NPN EPITAXIAL SILICON TRANSISTOR NPN DIGITAL TRANSISTOR (BUILT-IN RESISTORS) FEATURES *Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit). *The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the

 ..2. Size:143K  lge
dtc124e.pdf

DTC124E
DTC124E

DTC124EE/DTC124EUA/DTC124ECADTC124EKA/DTC124ESADigital Transistor(NPN)Features1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost com

 ..3. Size:223K  first silicon
dtc124e.pdf

DTC124E
DTC124E

SEMICONDUCTORDTC124ETECHNICAL DATABias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkBThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorKTransistor) contains a single transistor with a monolithic bias networkresistor. The BRT eliminates the

 0.1. Size:56K  motorola
pdtc124et 5.pdf

DTC124E
DTC124E

DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTC124ETNPN resistor-equipped transistor1999 Apr 16Product specificationSupersedes data of 1998 May 08Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124ETFEATURES Built-in bias resistors R1 and R2(typ. 22 k each)3handbook, 4 columns Simplification of circuit design3

 0.2. Size:58K  motorola
pdtc124es 2.pdf

DTC124E
DTC124E

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTC124ESNPN resistor-equipped transistor1998 May 08Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124ESFEATURES Built-in bias resistors R1 and R2(typ. 22 k each) Simplification o

 0.3. Size:57K  motorola
pdtc124ek 3.pdf

DTC124E
DTC124E

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC124EKNPN resistor-equipped transistor1998 May 08Product specificationSupersedes data of 1997 Sep 08File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124EKFEATURES Built-in bias resistors R1 and R2(typ. 22 k each)3 Simplificatio

 0.4. Size:58K  motorola
pdtc124eu 3.pdf

DTC124E
DTC124E

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC124EUNPN resistor-equipped transistor1999 Apr 16Product specificationSupersedes data of 1998 May 08Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124EUFEATURES Built-in bias resistors R1 and R2(typ. 22 k each)3handbook, 4 columns Simplification of circuit design

 0.5. Size:57K  motorola
pdtc124ee 2.pdf

DTC124E
DTC124E

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC124EENPN resistor-equipped transistor1998 Jul 31Product specificationSupersedes data of 1997 Jul 11File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124EEFEATURES Built-in bias resistors R1 and R2(typ. 22 k each) Simplification of circuit design

 0.6. Size:56K  philips
pdtc124et 5.pdf

DTC124E
DTC124E

DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTC124ETNPN resistor-equipped transistor1999 Apr 16Product specificationSupersedes data of 1998 May 08Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124ETFEATURES Built-in bias resistors R1 and R2(typ. 22 k each)3handbook, 4 columns Simplification of circuit design3

 0.7. Size:58K  philips
pdtc124es 2.pdf

DTC124E
DTC124E

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTC124ESNPN resistor-equipped transistor1998 May 08Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124ESFEATURES Built-in bias resistors R1 and R2(typ. 22 k each) Simplification o

 0.8. Size:57K  philips
pdtc124ek 3.pdf

DTC124E
DTC124E

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC124EKNPN resistor-equipped transistor1998 May 08Product specificationSupersedes data of 1997 Sep 08File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124EKFEATURES Built-in bias resistors R1 and R2(typ. 22 k each)3 Simplificatio

 0.9. Size:58K  philips
pdtc124eu 3.pdf

DTC124E
DTC124E

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC124EUNPN resistor-equipped transistor1999 Apr 16Product specificationSupersedes data of 1998 May 08Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124EUFEATURES Built-in bias resistors R1 and R2(typ. 22 k each)3handbook, 4 columns Simplification of circuit design

 0.10. Size:57K  philips
pdtc124ee 2.pdf

DTC124E
DTC124E

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC124EENPN resistor-equipped transistor1998 Jul 31Product specificationSupersedes data of 1997 Jul 11File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124EEFEATURES Built-in bias resistors R1 and R2(typ. 22 k each) Simplification of circuit design

 0.11. Size:174K  philips
pdtc124e series.pdf

DTC124E
DTC124E

DISCRETE SEMICONDUCTORS DATA SHEETPDTC124E seriesNPN resistor-equipped transistors; R1 = 22 k, R2 = 22 kProduct data sheet 2004 Aug 17Supersedes data of 2003 Apr 14NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC124E seriesR1 = 22 k, R2 = 22 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT

 0.12. Size:140K  rohm
dtc124e-series dtc124ee.pdf

DTC124E
DTC124E

100mA / 50V Digital transistors (with built-in resistors) DTC124EM / DTC124EE / DTC124EUA / DTC124EKA Applications Dimensions (Unit : mm) Inverter, Interface, Driver DTC124EM1.20.32 Features (3)1)Built-in bias resistors enable the configuration of an inverter (1)(2)circuit without connecting external input resistors (see the 0.220.13equivalent circuit).

 0.13. Size:152K  rohm
dtc124eeb.pdf

DTC124E
DTC124E

100mA / 50V Digital transistors (with built-in resistors) DTC124EEB Applications Dimensions (Unit : mm) Inverter, Interface, Driver EMT3F1.6 0.7 Features 0.261) Built-in bias resistors enable the configuration of (3)an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors (1) (2)

 0.14. Size:1515K  rohm
dtc124eefra dtc124euafra.pdf

DTC124E
DTC124E

DTC124E seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC50VIC(MAX.)100mA R122kDTC124EM DTC124EEBR2 (SC-105AA) (SC-89)22k EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistors, R1 = R2 = 22k 2) Built-in bias resistors enable the configuration of

 0.15. Size:82K  rohm
dtc124eub.pdf

DTC124E
DTC124E

Transistors DTC124EUB 100mA / 50V Digital transistors (with built-in resistors) DTC124EUB Applications Dimensions (Unit : mm) Inverter, Interface, Driver UMT3F2.0 Features 0.90.321) Built-in bias resistors enable the configuration of (3)an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-

 0.16. Size:70K  rohm
dtc124exx 25 sot416 323 346 23.pdf

DTC124E
DTC124E

TransistorsDigital transistors (built-in resistors)DTC124EE / DTC124EUA / DTC124EKADTC124ECA / DTC124ESAFFeatures FExternal dimensions (Units: mm)1) Built-in bias resistors enable theconfiguration of an inverter circuitwithout connecting external inputresistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow n

 0.17. Size:1515K  rohm
dtc124ekafra dtc124emfha.pdf

DTC124E
DTC124E

DTC124E seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC50VIC(MAX.)100mA R122kDTC124EM DTC124EEBR2 (SC-105AA) (SC-89)22k EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistors, R1 = R2 = 22k 2) Built-in bias resistors enable the configuration of

 0.18. Size:352K  diodes
ddtc124ee.pdf

DTC124E
DTC124E

DDTC (R1 = R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1 = R2 Dim Min Max Typ B C Lead Free/RoHS Compliant (Note 1) TOP VIEWA 0.15 0.30 0.22 "Green" Device (Note 3 and 4) B 0.75 0.85 0.80 C 1.45 1.75 1.60 M

 0.19. Size:545K  diodes
ddtc123ee ddtc143ee ddtc114ee ddtc124ee ddtc144ee ddtc115ee.pdf

DTC124E
DTC124E

DDTC (R1 = R2 SERIES) EE NPN PRE-BIASED TRANSISTOR IN SOT523 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT523 Complementary PNP Types Available (DDTA) Case Material: Molded Plastic, Green Molding Compound Built-In Biasing Resistors, R1 = R2 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes

 0.20. Size:178K  diodes
ddtc124eka.pdf

DTC124E
DTC124E

DDTC (R1 = R2 SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SC-59 Complementary PNP Types Available (DDTA) Dim Min Max Built-In Biasing Resistors, R1 = R2 A 0.35 0.50 Lead Free/RoHS Compliant (Note 2) "Green" Device, Note 3 and 4 B C B 1.50 1.70 C 2.70 3.00 D 0.95 Mechanical Data GG

 0.21. Size:89K  diodes
ddtc124eua.pdf

DTC124E
DTC124E

DDTC (R1 = R2 SERIES) UANPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Product Summary Features and Benefits Epitaxial Planar Die Construction Part Number R1, R2 (NOM) Complementary PNP Types Available (DDTA) DDTC123EUA 2.2K Built-In Biasing Resistors, R1 = R2 DDTC143EUA 4.7K Lead Free, RoHS Compliant (Note 1) Halogen and Antimony Free "Gr

 0.22. Size:99K  diodes
ddtc123eca ddtc143eca ddtc114eca ddtc124eca ddtc144eca ddtc115eca.pdf

DTC124E
DTC124E

DDTC(R1 = R2 SERIES) CANPN PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTORFeatures Mechanical Data Epitaxial Planar Die Construction Case: SOT23 Complementary PNP Types Available (DDTA) Case material: Molded Plastic. Green Molding Compound. Built-In Biasing Resistors, R1 = R2 Classification Rating 94V-0 Totally Lead-Free & Fully RoHS complia

 0.23. Size:198K  mcc
dtc124ee sot-523.pdf

DTC124E
DTC124E

MCCTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933DTC124EEFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Built-in bias resistors enable the

 0.24. Size:200K  mcc
dtc124eua sot-323.pdf

DTC124E
DTC124E

MCCTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933DTC124EUAFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Built-in bias resistors enable th

 0.25. Size:144K  onsemi
sdtc124eet1.pdf

DTC124E
DTC124E

DTC114EET1 Series,SDTC114EET1 SeriesBias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlehttp://onsemi.comdevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two r

 0.26. Size:155K  onsemi
sdtc124eet1g.pdf

DTC124E
DTC124E

MUN2212, MMUN2212L,MUN5212, DTC124EE,DTC124EM3, NSBC124EF3Digital Transistors (BRT)R1 = 22 kW, R2 = 22 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (

 0.27. Size:144K  onsemi
dtc123jet1g dtc124eet1g dtc124xet1g dtc143eet1g dtc143tet1g dtc143zet1g dtc144eet1g.pdf

DTC124E
DTC124E

DTC114EET1 Series,SDTC114EET1 SeriesBias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlehttp://onsemi.comdevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two r

 0.28. Size:155K  onsemi
dtc124em3.pdf

DTC124E
DTC124E

MUN2212, MMUN2212L,MUN5212, DTC124EE,DTC124EM3, NSBC124EF3Digital Transistors (BRT)R1 = 22 kW, R2 = 22 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (

 0.29. Size:82K  onsemi
dtc123jm3t5g dtc124em3t5g dtc124xm3t5g dtc143em3t5g dtc143tm3t5g dtc143zm3t5g dtc144em3t5g.pdf

DTC124E
DTC124E

DTC114EM3T5G SeriesDigital Transistors (BRT)NPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The digital transistorhttp://onsemi.comcontains a single transistor with a monolithic bias network consistingof two resistors; a series base resis

 0.30. Size:245K  secos
dtc124eseries.pdf

DTC124E
DTC124E

DTC124EE/DTC124EUA/DTC124EKADTC124ECA/TC124ESAElektronische BauelementeNPN Digital Transistors (Built-in Resistors)FEATURES* Built-in bias resistors enable the configuration ofan inverter circuit without connecting input resistors(see equivalent circuit).* Only the on/off confitions need to be set for operation,making device design easy.* The bias resistors consis of thin-fi

 0.31. Size:217K  secos
dtc124eca dtc124eka dtc124esa dtc124eua.pdf

DTC124E
DTC124E

DTC124EE/DTC124EUA/DTC124EKADTC124ECA/TC124ESAElektronische BauelementeNPN Digital Transistors (Built-in Resistors)FEATURES* Built-in bias resistors enable the configuration ofan inverter circuit without connecting input resistors(see equivalent circuit).* Only the on/off confitions need to be set for operation,making device design easy.* The bias resistors consis of thin-fi

 0.32. Size:407K  htsemi
dtc124eca dtc124ee dtc124eka dtc124esa dtc124eua.pdf

DTC124E
DTC124E

/DTC124EKA/DTC124ESADTC124EE/DTC124EUA/DTC124ECA DIGITAL TRANSISTOR (NPN) Features 1. Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit). 2. The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almo

 0.33. Size:405K  willas
dtc124eca.pdf

DTC124E
DTC124E

FM120-M WILLASTHRUDTC124ECANPN Digital Transistor FM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.Features SOD-123HSOT-23 Low profile surface mounted application in order to

 0.34. Size:399K  willas
dtc124ee.pdf

DTC124E
DTC124E

FM120-M WILLASTHRUDTC124EENPN Digital Transistor FM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFeFeaturesatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order toSOT-

 0.35. Size:405K  willas
dtc124eua.pdf

DTC124E
DTC124E

FM120-M WILLASTHRUDTC124EUANPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123HFeaturesSOT-323 Low profile surface mounted application in order to

 0.36. Size:146K  cystek
dtc124es3.pdf

DTC124E
DTC124E

Spec. No. : C363S3 Issued Date : 2002.08.16 CYStech Electronics Corp.Revised Date :2002.11.02 Page No. : 1/4 General Purpose NPN Digital Transistors (Built-in Resistors) DTC124ES3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-fi

 0.37. Size:322K  cystek
dtc124ec3.pdf

DTC124E
DTC124E

Spec. No. : C363C3 Issued Date : 2011.12.08 CYStech Electronics Corp.Revised Date : Page No. : 1/6 NPN Digital Transistors (Built-in Resistors) DTC124EC3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complete

 0.38. Size:290K  cystek
dtc124en3.pdf

DTC124E
DTC124E

Spec. No. : C363N3 Issued Date : 2002.08.16 CYStech Electronics Corp.Revised Date : 2013.01.03 Page No. : 1/6 NPN Digital Transistors (Built-in Resistors) DTC124EN3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors wi

 0.39. Size:179K  blue-rocket-elect
dtc124eta.pdf

DTC124E
DTC124E

DTC124ETA(3RC124ETA) NPN /SILICON NPN DIGITAL TRANSISTOR : Purpose: Switching, inverter circuit, interface circuit and driver circuit applications. : Features: With built-in bias resistors, simplify circuit design, red

 0.40. Size:545K  lrc
ldtc114em3t5g ldtc124em3t5g ldtc144em3t5g ldtc114ym3t5g ldtc114tm3t5g ldtc143tm3t5g ldtc123em3t5g ldtc143em3t5g ldtc143zm3t5g ldtc124xm3t5g ldtc123jm3t5g ldtc115em3t5g ldtc144wm3t5g ldtc144tm3t5g.pdf

DTC124E
DTC124E

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsNPN Silicon Surface Mount TransistorsSeriesLDTC114EM3T5GLDTC114EM3T5GS-LDTC114EM3T5G SeriesWith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic

 0.41. Size:545K  lrc
ldtc114em3t5g ldtc124em3t5g ldtc144em3t5g ldtc114ym3t5g ldtc114tm3t5g ldtc143tm3t5g ldtc123em3t5g.pdf

DTC124E
DTC124E

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsNPN Silicon Surface Mount TransistorsSeriesLDTC114EM3T5GLDTC114EM3T5GS-LDTC114EM3T5G SeriesWith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic

 0.42. Size:1285K  kexin
dtc124eca.pdf

DTC124E
DTC124E

SMD Type TransistorsDigital TransistorsDTC124ECA (KDTC124ECA)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.1 Features3 Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit) The bias resistors consist of thin-film resistors with complete1 2 isolation to allow positive biasing of t

 0.43. Size:1250K  kexin
dtc124ee.pdf

DTC124E
DTC124E

SMD Type TransistorsDigital TransistorsDTC124EE (KDTC124EE )SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.05 Features Built-in bias resistors enable the configuration of an inverter circuit2 1 without connecting external input resistors(see equivalent circuit) The bias resistors consist of thin-film resistors with complete3 isola

 0.44. Size:1224K  kexin
dtc124esa.pdf

DTC124E
DTC124E

DIP Type TransistorsDigital TransistorsDTC124ESA (KDTC124ESA)TO-92SUnit:mm4.00.12.480.245 TYP Features Built-in bias resistors enable the configuration of an inverter circuit0.48 (max) without connecting external input resistors(see equivalent circuit) 0.35 (min ) The bias resistors consist of thin-film resistors with complete21 3 isolation to allo

 0.45. Size:1198K  kexin
dtc124eua.pdf

DTC124E
DTC124E

SMD Type TransistorsDigital TransistorsDTC124EUA (KDTC124EUA) Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.They also have the advantage of almost complet

 0.46. Size:880K  kexin
dtc124em.pdf

DTC124E
DTC124E

SMD Type TransistorsDigital TransistorsDTC124EM (KDTC124EM)SOT-723 Unit:mm Features1 Built-in bias resistors enable the configuration of an inverter circuit 32 without connecting external input resistors(see equivalent circuit) The bias resistors consist of thin-film resistors with complete0.80 0.050.50 (max)1.20 0.05 isolation to allow positive biasin

 0.47. Size:85K  chenmko
chdtc124eegp.pdf

DTC124E
DTC124E

CHENMKO ENTERPRISE CO.,LTDCHDTC124EEGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 30 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation cu

 0.48. Size:85K  chenmko
chdtc124eugp.pdf

DTC124E
DTC124E

CHENMKO ENTERPRISE CO.,LTDCHDTC124EUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 30 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURESC-70/SOT-323* Small surface mounting type. (SC-70/SOT-323)* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation c

 0.49. Size:72K  chenmko
chdtc124ekgp.pdf

DTC124E
DTC124E

CHENMKO ENTERPRISE CO.,LTDCHDTC124EKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 30 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabili

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