Spec. No. : C214A3-A Issued Date : 2007.06.25 CYStech Electronics Corp.Revised Date : Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BC517A3Description The BC517A3 is a darlington amplifier transistor Pb-free package Symbol Outline BC517A3 TO-92 C B E BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C) Parameter S

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC517/DDarlington TransistorsNPN SiliconBC517COLLECTOR 1BASE2EMITTER 3123MAXIMUM RATINGSCASE 2904, STYLE 17Rating Symbol Value UnitTO92 (TO226AA)CollectorEmitter Voltage VCES 30 VdcCollectorBase Voltage VCB 40 VdcEmitterBase Voltage VEB 10 VdcCollector Current Continuous IC

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC517NPN Darlington transistor1999 Apr 23Product specificationSupersedes data of 1997 Apr 23Philips Semiconductors Product specificationNPN Darlington transistor BC517FEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 30 V)1 emitter Very high DC current gain (min. 30000).2

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC517NPN Darlington transistor1999 Apr 23Product specificationSupersedes data of 1997 Apr 23Philips Semiconductors Product specificationNPN Darlington transistor BC517FEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 30 V)1 emitter Very high DC current gain (min. 30000).2

January 2005BC517NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0A. Sourced from process 05.TO-9211. Collector 2. Base 3. EmitterAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 30 VVCBO Collector-Base Voltage 40 VVEBO Emi

SEMICONDUCTOR BC517TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE HIGH DARLINGTON TRANSISTOR.B CN DIM MILLIMETERSA 4.70 MAXEKMAXIMUM RATING (Ta=25 ) G B 4.80 MAXC 3.70 MAXDD 0.45CHARACTERISTIC SYMBOL RATING UNITE 1.00F 1.27VCBOCollector-Base Voltage 40 VG 0.85H 0.45VCEOCollector-Emitter Voltage 30 V_H J 14.00 + 0.50K 0.55 MAXF FVE

Spec. No. : HA200217HI-SINCERITYIssued Date : 2002.09.01Revised Date : 2005.02.04MICROELECTRONICS CORP.Page No. : 1/4HBC517NPN EPITAXIAL PLANAR TRANSISTORDescriptionGeneral Purpose High Darlington TransistorTO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature ...........................................................................................