BC517A3 - описание и поиск аналогов

Spec. No. C214A3-A Issued Date 2007.06.25 CYStech Electronics Corp. Revised Date Page No. 1/6 General Purpose NPN Epitaxial Planar Transistor BC517A3 Description The BC517A3 is a darlington amplifier transistor Pb-free package Symbol Outline BC517A3 TO-92 C B E B Base C Collector E Emitter Absolute Maximum Ratings (Ta=25 C) Parameter S

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC517/D Darlington Transistors NPN Silicon BC517 COLLECTOR 1 BASE 2 EMITTER 3 1 2 3 MAXIMUM RATINGS CASE 29 04, STYLE 17 Rating Symbol Value Unit TO 92 (TO 226AA) Collector Emitter Voltage VCES 30 Vdc Collector Base Voltage VCB 40 Vdc Emitter Base Voltage VEB 10 Vdc Collector Current Continuous IC

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC517 NPN Darlington transistor 1999 Apr 23 Product specification Supersedes data of 1997 Apr 23 Philips Semiconductors Product specification NPN Darlington transistor BC517 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 30 V) 1 emitter Very high DC current gain (min. 30000). 2

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC517 NPN Darlington transistor 1999 Apr 23 Product specification Supersedes data of 1997 Apr 23 Philips Semiconductors Product specification NPN Darlington transistor BC517 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 30 V) 1 emitter Very high DC current gain (min. 30000). 2

January 2005 BC517 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0A. Sourced from process 05. TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 40 V VEBO Emi

SEMICONDUCTOR BC517 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. B C N DIM MILLIMETERS A 4.70 MAX E K MAXIMUM RATING (Ta=25 ) G B 4.80 MAX C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO Collector-Base Voltage 40 V G 0.85 H 0.45 VCEO Collector-Emitter Voltage 30 V _ H J 14.00 + 0.50 K 0.55 MAX F F VE

Spec. No. HA200217 HI-SINCERITY Issued Date 2002.09.01 Revised Date 2005.02.04 MICROELECTRONICS CORP. Page No. 1/4 HBC517 NPN EPITAXIAL PLANAR TRANSISTOR Description General Purpose High Darlington Transistor TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ...........................................................................................