Spec. No. : C304L3 Issued Date : 2007.05.04 CYStech Electronics Corp.Revised Date :2012.02.22 Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BCP56L3Description General purpose mainly intended for use in medium power industrial application and for audio amplifier output stage. Features High collector current and low V CE(SAT) Complement to BCP53L

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BCP56T1/DBCP56T1NPN SiliconSERIESEpitaxial TransistorMotorola Preferred DeviceThese NPN Silicon Epitaxial transistors are designed for use in audio amplifierapplications. The device is housed in the SOT-223 package, which is designed forMEDIUM POWERmedium power surface mount applications.NPN SILICON High Cu

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D087BCP54; BCP55; BCP56NPN medium power transistors1999 Apr 08Product specificationSupersedes data of 1997 Apr 08Philips Semiconductors Product specificationNPN medium power transistors BCP54; BCP55; BCP56FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V).1 base2, 4 collectorAP

BC639; BCP56; BCX5680 V, 1 A NPN medium power transistorsRev. 08 22 June 2007 Product data sheet1. Product profile1.1 General descriptionNPN medium power transistor series.Table 1. Product overviewType number[1] Package PNP complementNXP JEITA JEDECBC639[2] SOT54 SC-43A TO-92 BC640BCP56 SOT223 SC-73 - BCP53BCX56 SOT89 SC-62 TO-243 BCX53[1] Valid for all available sel

BCP55/56MEDIUM POWER AMPLIFIERADVANCE DATA SILICON EPITAXIAL PLANAR NPNTRANSISTORS MINIATURE PLASTIC PACKAGE FORAPPLICATION IN SURFACE MOUNTINGCIRCUITS GENERAL PURPOSE MAINLY INTENDED2FOR USE IN MEDIUM POWER INDUSTRIALAPPLICATION AND FOR AUDIO AMPLIFIER3OUTPUT STAGE2 PNP COMPLEMENTS ARE BCP52 AND1BCP53 RESPECTIVELYSOT-223INTERNAL SCHEMATIC DIAGRAMABSOLUTE

BCP56-16Low power NPN TransistorGeneral features Silicon epitaxial planar NPN medium voltage transistor2 SOT-223 plastic package for surface mounting circuits3 Available in tape & reel packing 21 In compliance with the 2002/93/EC European DirectiveSOT-223 The PNP complementary type is BCP53-16Applications Medium voltage load switch transistor

BCP56CECBSOT-223 NPN General Purpose Amplifier These devices are designed for general purpose medium power amplifiers and switches requiring collectorcurrents to 1A. Sourced from Process 39. Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter BCP56 Units80 VVCEO Collector-Emitter Voltage100 VVCBO Collector-Base Voltage5 VVEBO Emitter-Bas

BCP56; BCX56; BC56PA80 V, 1 A NPN medium power transistorsRev. 9 25 October 2011 Product data sheet1. Product profile1.1 General descriptionNPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number[1] Package PNP complementNXP JEITA JEDECBCP56 SOT223 SC-73 - BCP53BCX56 SOT89 SC-62 TO-243 BCX53BC56PA SOT1061

BCP56T series80 V, 1 A NPN medium power transistorsRev. 2 29 April 2019 Product data sheet1. Product profile1.1. General descriptionNPN medium power transistors in a medium power SOT223 (SC73) Surface-Mounted Device(SMD) plastic package.Table 1. Product overviewType number Package NPN comlementNexperia JEDECBCP56T SOT223 SC-73 BCP53TBCP56-10T BCP53-10TBCP56-16T BCP53

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BCP56H series80 V, 1 A NPN medium power transistorsRev. 1 23 November 2016 Product data sheet1. Product profile1.1 General descriptionNPN medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package PNP complementNexperia JEITA JEDECBCP56H SOT223 SC-73 - BCP53HBCP56-10H BCP53-10HBC

BCP56T series80 V, 1 A NPN medium power transistorsRev. 3 1 July 2022 Product data sheet1. General descriptionNPN medium power transistors in a medium power SOT223 (SC73) Surface-Mounted Device(SMD) plastic package.Table 1. Product overviewType number Package PNP complementNexperia JEDECBCP56T SOT223 SC-73 BCP53TBCP56-10T BCP53-10TBCP56-16T BCP53-16T2. Features and b

BCP 54M ... BCP 56MNPN Silicon AF Transistors4 For AF driver and output stages5 High collector current Low collector-emitter saturation voltage3 Complementary types: BCP 51M...BCP 53M(PNP)21VPW05980Type Marking Ordering Code Pin Configuration PackageBCP 54M BAs Q62702-C2595 1 = B 2 = C 3 = E 4 n.c. 5 = C SCT-595BCP 55M BEs Q62702-C2606 BCP 56M BHs Q6270

NPN Silicon AF Transistors BCP 54 ... BCP 56 For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP 51 BCP 53 (PNP)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3 4BCP 54 BCP 54 Q62702-C2117 B C E C SOT-223BCP 54-10 BCP 54-10 Q62702-C2119BCP 54-16 BCP 54-16 Q62702-C2120BCP 55

BCP 54/ 55/ 56 NPN MEDIUM POWER TRANSISTORS IN SOT223 Features Mechanical Data BVCEO > 45V, 60V & 80V Case: SOT223 IC = 1A High Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound; ICM = 2A Peak Pulse Current UL Flammability Rating 94V-0 2W Power Dissipation Moisture Sensitivity: Level 1 per J-STD-020 Low Saturat

SOT223 NPN SILICON PLANARBCP56MEDIUM POWER TRANSISTORISSUE 3 AUGUST 1995 T i I i C i II V T T EC T I D T I BABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V 8 V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI II V V I V I II i V 8 V I V I

SOT223 NPN SILICON PLANARBCP56MEDIUM POWER TRANSISTORISSUE 3 AUGUST 1995 T i I i C i II V T T EC T I D T I BABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V 8 V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI II V V I V I II i V 8 V I V I

BCP5616Q 80V NPN MEDIUM POWER TRANSISTOR IN SOT223 Description Applications This Bipolar Junction Transistor (BJT) is designed to meet the Medium Power Switching or Amplification Applications stringent requirements of Automotive Applications. AF Driver and Output Stages Mechanical Data Features Case: SOT223 BVCEO > 80V Case Material: Molded Plastic, Gree

BCP54...-BCP56...NPN Silicon AF Transistors For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP51...BCP53 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageBCP54 * 1=B 2=C 3=E 4=C - - SOT223 BCP54-16 * 1=B 2=C 3=E 4=C - - SOT223 BCP5

BCP56-10,BCP56-16Features Complementary Types: BCP53 (PNP) Halogen Free Available Upon Request By Adding Suffix "-HF"NPN Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingPlastic-Encapsulate Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)TransistorsMaximum Ratings @ 25C Unless Otherwise

M C CR BCP54-10/16HE3Micro Commercial Components Micro Commercial Components BCP55-10/16HE3130 W Cochran St, Unit BSimi Valley, CA 93065Tel:818-701-4933 BCP56-10/16HE3Features For AF driver and output stagesNPN High collector current Low collector-emitter saturation voltage Plastic-Encapsulate Complementary types: BCP51 ... BCP53 (PNP)Transistors L

BCP56 Series,SBCP56 SeriesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223 http://onsemi.compackage, which is designed for medium power surface mountapplications.MEDIUM POWER NPN SILICONFeaturesHIGH CURRENT TRANSISTOR High Current: 1.0 ASURFACE MOUNT The

BCP56 Series,SBCP56 SeriesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223 http://onsemi.compackage, which is designed for medium power surface mountapplications.MEDIUM POWER NPN SILICONFeaturesHIGH CURRENT TRANSISTOR High Current: 1.0 ASURFACE MOUNT The

BCP56 SeriesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223package, which is designed for medium power surface mounthttp://onsemi.comapplications.FeaturesMEDIUM POWER NPN SILICON High Current: 1.0 AHIGH CURRENT TRANSISTOR The SOT-223 package can be solder

BCP56 SeriesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223package, which is designed for medium power surface mounthttp://onsemi.comapplications.FeaturesMEDIUM POWER NPN SILICON High Current: 1.0 AHIGH CURRENT TRANSISTOR The SOT-223 package can be solder

BCP56T1 SeriesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223package, which is designed for medium power surface mounthttp://onsemi.comapplications.FeaturesMEDIUM POWER NPN SILICON High Current: 1.0 AHIGH CURRENT TRANSISTOR The SOT-223 package can be sold

BCP56 SeriesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223package, which is designed for medium power surface mounthttp://onsemi.comapplications.FeaturesMEDIUM POWER NPN SILICON High Current: 1.0 AHIGH CURRENT TRANSISTOR The SOT-223 package can be solder

BCP56T1 SeriesPreferred DevicesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223package, which is designed for medium power surface mounthttp://onsemi.comapplications.FeaturesMEDIUM POWER NPN SILICON Pb-Free Package is AvailableHIGH CURRENT TRANSISTOR Hig

BCP56 Series,SBCP56 SeriesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223 http://onsemi.compackage, which is designed for medium power surface mountapplications.MEDIUM POWER NPN SILICONFeaturesHIGH CURRENT TRANSISTOR High Current: 1.0 ASURFACE MOUNT The

BCP56 Series,SBCP56 SeriesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223 http://onsemi.compackage, which is designed for medium power surface mountapplications.MEDIUM POWER NPN SILICONFeaturesHIGH CURRENT TRANSISTOR High Current: 1.0 ASURFACE MOUNT The

BCP56 Series,SBCP56 SeriesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223 http://onsemi.compackage, which is designed for medium power surface mountapplications.MEDIUM POWER NPN SILICONFeaturesHIGH CURRENT TRANSISTOR High Current: 1.0 ASURFACE MOUNT The

BCP56 Series,SBCP56 SeriesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223 http://onsemi.compackage, which is designed for medium power surface mountapplications.MEDIUM POWER NPN SILICONFeaturesHIGH CURRENT TRANSISTOR High Current: 1.0 ASURFACE MOUNT The

BCP56 Series,SBCP56 SeriesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223 http://onsemi.compackage, which is designed for medium power surface mountapplications.MEDIUM POWER NPN SILICONFeaturesHIGH CURRENT TRANSISTOR High Current: 1.0 ASURFACE MOUNT The

BCP56 Series,SBCP56 SeriesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223 http://onsemi.compackage, which is designed for medium power surface mountapplications.MEDIUM POWER NPN SILICONFeaturesHIGH CURRENT TRANSISTOR High Current: 1.0 ASURFACE MOUNT The

BCP56 1A , 100V NPN Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-223 For AF driver and output stages High collector current A Low collector-emitter saturation voltage M Complementary types: BCP53 (PNP) 4Top ViewC BCLASSIFICATION OF hFE(2) 12Pro

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS BCP54 BCP55 BCP56SOT-223Formed SMD PackageGeneral Purpose Medium Power DC ApplicationsComplementary BCP51 BCP52 and BCP53ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL BCP54 BCP55 BCP56 UNITSCollector Base Voltage V

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors SOT-223 BCP54,55,56 TRANSISTOR (NPN) FEATURES For AF driver and output stages 1. BASE High collector current 2. COLLECTOR Low collector-emitter saturation voltage 3. EMITTER Complementary types: BCP51 ... BCP53 (PNP) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Sy

BCP54,55,56SOT-223 Transistor(NPN)SOT-2231. BASE 2. COLLECTOR 1 3. EMITTER Features For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP51 ... BCP53 (PNP) MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter BCP54 BCP55 BCP56 Units VCBO Col

BCP56NPN Silicon Planar Epitaxial TransistorCOLLECTOR2, 441. BASE2.COLLECTOR P b Lead(Pb)-Free3.EMITTERBASE4.COLLECTOR 11233SOT-223EMITTERABSOLUTE MAXIMUM RATINGS (TA=25C)SymbolRating Value UnitVCollector-Emitter Voltage CEO V80VCBOCollector-Base Voltage 100 VVEBOEmitter-Base Voltage 5 VIC(DC)Collector Current (DC) 1 APDTotal Device

BCP54-BCP56 TRANSISTOR (NPN) SOT-223 1 FEATURES For AF driver and output stages 1. BASE High collector current 2. COLLECTOR Low collector-emitter saturation voltage 3. EMITTER Complementary types: BCP51 ... BCP53 (PNP) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter BCP54 BCP55 BCP56 UnitsVCBO Collector-Base Voltage 45 60 100 V VCEO Collec

www.msksemi.comBCP54 BCP55 BCP56Semiconductor CompianceSemiconductor Compiance BCP54,55,56 TRANSISTOR (NPN) SOT-223 FEATURES For AF driver and output stages 11. BASE High collector current 22. COLLECTOR Low collector-emitter saturation voltage 33. EMITTER Complementary types: BCP51 ... BCP53 (PNP) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Sym