Spec. No. : C304M3 Issued Date : 2007.04.23 CYStech Electronics Corp.Revised Date : 2013.08.07 Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BVCEO 100VIC 1ABCX56M3VCESAT 0.13V(typ.)Features High breakdown voltage, BV 100V CEO Large continuous collector current capability Low collector saturation voltage Complementary to BCX53M3

DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D109BCX54; BCX55; BCX56NPN medium power transistors1999 Apr 19Product specificationSupersedes data of 1997 Mar 24Philips Semiconductors Product specificationNPN medium power transistors BCX54; BCX55; BCX56FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V).1 emitter2 collectorAPP

BC639; BCP56; BCX5680 V, 1 A NPN medium power transistorsRev. 08 22 June 2007 Product data sheet1. Product profile1.1 General descriptionNPN medium power transistor series.Table 1. Product overviewType number[1] Package PNP complementNXP JEITA JEDECBC639[2] SOT54 SC-43A TO-92 BC640BCP56 SOT223 SC-73 - BCP53BCX56 SOT89 SC-62 TO-243 BCX53[1] Valid for all available sel

BCP56; BCX56; BC56PA80 V, 1 A NPN medium power transistorsRev. 9 25 October 2011 Product data sheet1. Product profile1.1 General descriptionNPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number[1] Package PNP complementNXP JEITA JEDECBCP56 SOT223 SC-73 - BCP53BCX56 SOT89 SC-62 TO-243 BCX53BC56PA SOT1061

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BCX56T series80 V, 1 A NPN power bipolar transistorsRev. 1 22 August 2019 Product data sheet1. Product profile1.1. General descriptionNPN power transistors in a medium power SOT89 (SC-62) flat lead Surface-Mounted Device(SMD) plastic package.Table 1. Product overviewType number Package PNP complementNexperia JEDECBCX56T SOT89 SC-62 BCX53TBCX56-10T BCX53-10TBCX56-16T

NPN Silicon AF Transistors BCX 54 BCX 56Features For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCX 51 BCX 53 (PNP)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BCX 54 BA Q62702-C954 B C E SOT-89BCX 54-10 BC Q62702-C1861BCX 54-16 BD Q62702-C1731BCX 55 BE Q62702-C1729

BCX54SOT89 NPN SILICON PLANAR BCX55MEDIUM POWER TRANSISTORSBCX56ISSUE 3 FEBRUARY 1996 PARTMARKING DETAILS:-CBCX54 BA BCX54-10 BC BCX54-16 BDBCX55 BE BCX55-10 BG BCX55-16 BMBCX56 BH BCX56-10 BK BCX56-16 BLECOMPLEMENTARY TYPES:-CBCX54 BCX51 BCX55 BCX52 BCX56 BCX53BABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL BCX54

BCX54 /55 /56 NPN MEDIUM POWER TRANSISTORS IN SOT89 Features Mechanical Data BVCEO > 45V, 60V & 80V Case: SOT89 Ic = 1A Continuous Collector Current Case Material: Molded Plastic, Green Molding Compound; ICM = 2A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(sat)

BCX5616Q 80V NPN MEDIUM POWER TRANSISTORS IN SOT89 Description Mechanical Data Case: SOT89 This Bipolar Junction Transistor (BJT) is designed to meet the Case Material: Molded Plastic, Green Molding Compound stringent requirements of Automotive Applications. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Features Terminals: Ma

BCX54 ...- BCX56...NPN Silicon AF Transistors1 For AF driver and output stages2 High collector current 32 Low collctor-emitter saturation voltage Complementary types: BCX51...BCX53 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageBCX54-16 BD 1=B 2=C 3=E SOT89 BCX55 BE 1=B 2=C 3=E SOT89 BCX55-16

BCX56/BCX56-10/BCX56-16Electrical Characteristics @ 25C Unless Otherwise SpecifiedParameter Symbol Min Typ Max Units ConditionsV(BR)CBO 100 IC=100A, IE=0Collector-Base Breakdown Voltage VV(BR)CEO IC=10mA, IB=0Collector-Emitter Breakdown Voltage 80 VV(BR)EBO IE=10A, IC=0Emitter-Base Breakdown Voltage 5 VICBO VCB=30V, IE=0Collector-Base Cutoff Current 0.1 AIEBO VEB=

BCX56NPN TransistorsElektronische BauelementePlastic-Encapsulate TransistorsRoHS Compliant Product1SOT-89231.BASE4.4~4.62.COLLECTOR 1.4~1.81.4~1.63.EMITTERFeaturesPower dissipation 0.36~0.56 PCM: 1. 2 W (Tamb=25o ) CCollector current 0.32~0.520.35~0.441.5Ref.ICM: 1 A 2.9~3.1Collector-base voltage V(BR)CBO: 100 VDimensision in MillimeterOp

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L BCX54,BCX55,BCX56 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR PNP Complements to BCX51,BCX52,BCX53 Low Voltage3. EMITTER High CurrentAPPLICATIONS Driver Stages of Audio Amplifiers MARKING:BCX54:BA, BCX54-10:BC, BCX54-16:BD BCX55:BE, BCX55-10:BG, BCX55-16B

BCX54 ,BCX55,BCX56 TRANSISTOR (NPN) SOT-89-3L FEATURES PNP Complements to BCX51,BCX52,BCX53 1. BASE Low Voltage High Current2. COLLECTOR 3. EMITTER APPLICATIONS Driver Stages of Audio Amplifiers MARKING:BCX54:BA, BCX54-10:BC, BCX54-16:BD BCX55:BE, BCX55-10:BG, BCX55-16BM BCX56:BH, BCX56-10:BK, BCX56-16:BL MAXIMUM RATINGS (Ta=25 unless otherwise noted) S

BCX54-BCX56 NPN Silicon AF TransistorsSOT-894.6B4.41.61.81.41.4Features2.64.252.43.75 For AF driver and output stages 0.8MIN0.53High collector current 0.400.480.442x)0.13 B0.35 0.371.5 Low collector-emitter saturation voltage 3.0 Complementary types:BCX51BCX53(PNP)Dimensions in inches and (millimeters)Ordering InformationT

BCX54/BCX55/BCX56NPN Plastic-Encapsulate TransistorP b Lead(Pb)-Free1. BASE 12. COLLECTOR23FEATURES 3. EMITTERHigh current SOT-89Low voltage Medium power general purposes Driver stages of audio amplifiers. MAKING: BCX54:BA BCX54-10:BC BCX54-16:BD BCX55:BE BCX55-10:BG BCX52-16:BM BCX56:BH BCX56-10:BK BCX56-16:BL MAXIMUM RATINGS (TA=25 unless otherwise noted)

BCX56NPN Plastic-Encapsulate TransistorP b Lead(Pb)-Free1. BASE 12. COLLECTOR233. EMITTERSOT-89MAXIMUM RATINGS ( TA=25C unless otherwise noted)Rating Symbol Value UnitVCBO100Collector-Base Voltage VVCEO80 VCollector-Emitter VoltageVEBOVEmitter-Base Voltage 5.0ICCollector Current Continuous 1.0 APDmWTotal Device Dissipation TA=25C 500+150 C

FM120-M BCX55 WILLASTHRU SOT-89 Plastic-Encapsulate TransistorsBCX56FM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to

BCX56U NPN Silicon Epitaxial Planar Transistor Medium Power Transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 100 VCollector Emitter Voltage VCEO 80 VEmitter Base Voltage VEBO 5 VCollector Current IC 1 APeak Collector Current ICM 1.5 A0.5 1) Total Power Dissipation Ptot W 1.3 2) Junction Temperature Tj 150 Sto

BCX56U NPN Silicon Epitaxial Planar Transistor Medium Power Transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 100 VCollector Emitter Voltage VCEO 80 VEmitter Base Voltage VEBO 5 VCollector Current IC 1 APeak Collector Current ICM 1.5 A0.5 1) Total Power Dissipation Ptot W 1.3 2) Junction Temperature Tj 150 Sto

SEMICONDUCTORBCX54 ~ BCX56TECHNICALDATABCX54,BCX55,BCX56 TRANSISTOR (NPN) FEATURESSOT-89-3L PNP Complements to BCX51,BCX52,BCX53 Low Voltage High Current 1. BASE 2. COLLECTOR APPLICATIONS 3. EMITTER Driver Stages of Audio Amplifiers MARKING: BCX54:BA, BCX54-10:BC, BCX54-16:BD BCX55:BE, BCX55-10:BG, BCX55-16BM BCX56:B H, BCX56-10:BK, BCX56-16:BL MAXIMUM RATI

SMD Type TransistorsNPN Transistors BCX54,BCX55,BCX56(KCX54 ,KCX55,KCX56)1.70 0.1FeaturesHigh current (max. 1 A).Low voltage (max. 80 V).0.42 0.10.46 0.11.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage BCX54 VCBO 45 VBCX55 60 VBCX56 100 VCollector-emitter voltage BCX54 VCEO 45 VBCX55 60 VBCX56 80

PBCX56-16-AU NPN Low Vce(sat) Transistor SOT-89 Unit: inch(mm) Voltage 100V Current 1A Features Silicon NPN epitaxial type Low Vce(sat) 0.35V(max)@Ic/Ib= 500mA / 50mA High collector current capability Excellent DC current gain characteristics AEC-Q101 qualified Lead free in comply with EU RoHS 2.0 Green molding compound as per IEC61249 Standar

BCX54/BCX55/BCX56NPN Silicon AF Transistors FEATURES For AF driver and output stages Pb High collector current Lead-free Low collector-emitter saturation voltage Complementary types: BCX51BCX53(PNP) SOT-89 ORDERING INFORMATION Type No. Marking Package Code BCX54 BA SOT-89 BCX54-10 BC SOT-89 BCX54-16 BD SOT-89 BCX55 BE SOT-89 BCX55-10 BG SOT-89

BCX54/BCX55/BCX56NPN TransistorsFeaturesHigh current (max. 1 A).Low voltage (max. 80 V).321.Base2.Collector13.Emitter Simplified outline(SOT-89)Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage BCX54 VCBO 45 VBCX55 60 VBCX56 100 VCollector-emitter voltage BCX54 VCEO 45 VBCX55 60 VBCX56 80 VEmitter-base voltage VEBO 5 V

BCX56SQNPN TransistorSOT-89Features For AF driver and output stages High collector current Low collector-emitter saturation voltageAbsolute Maximum Ratings (Ta=25unless otherwise specified)Parameter Symbol Value UnitsCollector Base Voltage VCBO 100 VCollector Emitter Voltage VCEO 80 VEmitter Base Voltage VEBO 5 VCollector Current I 1 ACPeak Collector Curr

BCX54,BCX55,BCX56 TRANSISTOR(NPN)SOT-89-3L SOT-89-3LPlastic-Encapsulate TransistorsSOT-89-3L Features BCX51,BCX52,BCX53 ; Complementary to BCX51,BCX52,BCX53 500mW; Power Dissipation of 500mW High Stability and High Reliability Mechanical Data : SOT-89-3L SO

BCX54 THRU BCX56BCX54 THRU BCX56BCX54 THRU BCX56BCX54 THRU BCX56BCX54 THRU BCX56 TRANSISTOR(NPN)FEATURE SOT-89 PNP Complements to BCX51,BCX52,BCX53 Low Voltage High Current1. BASE 2. COLLECTOR 3. EMITTER APPLICATIONS Driver Stages of Audio Amplifiers MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Unit BCX54 45VCBO Collector-Base Vo

RoHS COMPLIANT BCX56-16Q NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moitsure Sensitivity Level 1 Low collector-emitter saturation voltage Part no. with suffix Q means AEC-Q101 qualified Mechanical Data Package: SOT-89 Molding compound meet

BCX54-BCX56SOT-89-3L BCX54,BCX55,BCX56 TRANSISTOR (NPN)1. BASEFEATURES 2. COLLECTOR PNP Complements to BCX51,BCX52,BCX53 Low Voltage3. EMITTER High CurrentAPPLICATIONS Driver Stages of Audio AmplifiersMARKING:BCX54:BA, BCX54-10:BC, BCX54-16:BD BCX55:BE, BCX55-10:BG, BCX55-16BM BCX56:B H, BCX56-10:BK, BCX56-16:BL MAXIMUM RATINGS (Ta=25 unless otherwise noted)

BCX56BIPOLAR TRANSISTOR (NPN)FEATURES Complementary to BCX53 High Current Low Voltage For Stages of Audio Amplifiers Application Surface Mount deviceSOT-89MECHANICAL DATA Case: SOT-89 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.055 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise note

Plastic-Encapsulate Transistors BCX54/BCX55/BCX56 FEATURES (NPN) For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types:BCX51BCX53(PNP) ORDERING INFORMATION Type No. Marking Package Code 1. BASE BCX54 BA SOT-89 2. COLLECTO SOT-89 BCX54-10 BC SOT-89 BCX54-16 BD SOT-89 3. EMITTER BCX55 BE SOT-89

YFSEMI ELECTRONNPN Silicon AF Transistors BCX54/BCX55/BCX56 FEATURES For AF driver and output stages Pb High collector current Lead-free Low collector-emitter saturation voltage Complementary types: BCX51BCX53(PNP) SOT-89 ORDERING INFORMATION Type No. Marking Package Code BCX54 BA SOT-89 BCX54-10 BC SOT-89 BCX54-16 BD SOT-89 BCX55 BE S

1Jiangsu Weida Semiconductor Co., Ltd.NPN TransistorsBCX54,BCX55,BCX56(KCX54 ,KCX55,KCX56)FeaturesHigh current (max. 1A).Low voltage (max.80V).Package:SOT-89-3L.SOT-89-3L1:B 2:C 3:EAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitBCX54 45 VVCBOCollector-base voltageBCX55 60 VBCX56 100 VBCX54 45 VVCEOCollector-emitter voltageBCX55