BCX69M3 - описание и поиск аналогов

Spec. No. C314M3 Issued Date 2007.04.23 CYStech Electronics Corp. Revised Date 2013.08.07 Page No. 1/6 General Purpose PNP Epitaxial Planar Transistor BCX69M3 Features Large continuous collector current capability Low collector saturation voltage Complementary to BCX68M3 Pb-free package Symbol Outline BCX69M3 SOT-89 B Base C Collector

PNP Silicon AF Transistors BCX 69 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary type BCX 68 (NPN) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 BCX 69 Q62702-C1714 B C E SOT-89 BCX 69-10 CF Q62702-C1867 BCX 69-16 CG Q62702-C1868 BCX 69-25 CH Q62702-C1869 Maximum Rat

CBCX68 SERIES NPN CBCX69 SERIES PNP www.centralsemi.com SURFACE MOUNT DESCRIPTION COMPLEMENTARY SILICON The CENTRAL SEMICONDUCTOR CBCX68 and SMALL SIGNAL TRANSISTORS CBCX69 series types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high current capability. MARKI

CBCX68 SERIES NPN CBCX69 SERIES PNP www.centralsemi.com SURFACE MOUNT DESCRIPTION COMPLEMENTARY SILICON The CENTRAL SEMICONDUCTOR CBCX68 and SMALL SIGNAL TRANSISTORS CBCX69 series types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high current capability. MARKI

CBCX68 SERIES NPN CBCX69 SERIES PNP www.centralsemi.com SURFACE MOUNT DESCRIPTION COMPLEMENTARY SILICON The CENTRAL SEMICONDUCTOR CBCX68 and SMALL SIGNAL TRANSISTORS CBCX69 series types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high current capability. MARKI

SOT89 PNP SILICON PLANAR BCX69 MEDIUM POWER TRANSISTOR ISSUE 2 FEBRUARY 1995 FEATURES * High gain and low saturation voltages C COMPLEMENTARY TYPE BCX68 PARTMARKING DETAIL BCX69 CJ E BCX69-16 CG C BCX69-25 CH B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -25 V Collector-Emitter Voltage VCEO -20 V Emitter-Bas

SOT89 PNP SILICON PLANAR BCX69 MEDIUM POWER TRANSISTOR ISSUE 2 FEBRUARY 1995 FEATURES * High gain and low saturation voltages C COMPLEMENTARY TYPE BCX68 PARTMARKING DETAIL BCX69 CJ E BCX69-16 CG C BCX69-25 CH B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -25 V Collector-Emitter Voltage VCEO -20 V Emitter-Bas

BCX69 TRANSISTOR (PNP) FEATURES SOT-89 For general AF applications High collector current 1. BASE High current gain Low collector-emitter saturation voltage 2. COLLECTOR 1 Complementary type BCX68 (NPN) 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -25 V VCEO Collector-Emit

BCX69 SOT-89 Transistor(PNP) 1. BASE SOT-89 1 2. COLLECTOR 4.6 B 2 4.4 1.6 1.8 1.4 1.4 3 3. EMITTER 2.6 4.25 2.4 3.75 Features 0.8 MIN 0.53 For general AF applications 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 High collector current 1.5 3.0 High current gain Dimensions in inches and (millimeters) Low collector-emitter saturation voltage Com

SMD Type Transistors PNP Transistors BCX69 (KCX69) Features For general AF applications 1.70 0.1 High collector current High current gain Low collector-emitter saturation voltage Complementary type BCX 68 (NPN) 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Volta