Spec. No. : C314M3 Issued Date : 2007.04.23 CYStech Electronics Corp.Revised Date : 2013.08.07 Page No. : 1/6 General Purpose PNP Epitaxial Planar Transistor BCX69M3Features Large continuous collector current capability Low collector saturation voltage Complementary to BCX68M3 Pb-free package Symbol Outline BCX69M3 SOT-89 BBase CCollector

PNP Silicon AF Transistors BCX 69 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCX 68 (NPN)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BCX 69 Q62702-C1714 B C E SOT-89BCX 69-10 CF Q62702-C1867BCX 69-16 CG Q62702-C1868BCX 69-25 CH Q62702-C1869Maximum Rat

CBCX68 SERIES NPNCBCX69 SERIES PNPwww.centralsemi.comSURFACE MOUNTDESCRIPTION:COMPLEMENTARY SILICON The CENTRAL SEMICONDUCTOR CBCX68 and SMALL SIGNAL TRANSISTORSCBCX69 series types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high current capability.MARKI

CBCX68 SERIES NPNCBCX69 SERIES PNPwww.centralsemi.comSURFACE MOUNTDESCRIPTION:COMPLEMENTARY SILICON The CENTRAL SEMICONDUCTOR CBCX68 and SMALL SIGNAL TRANSISTORSCBCX69 series types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high current capability.MARKI

CBCX68 SERIES NPNCBCX69 SERIES PNPwww.centralsemi.comSURFACE MOUNTDESCRIPTION:COMPLEMENTARY SILICON The CENTRAL SEMICONDUCTOR CBCX68 and SMALL SIGNAL TRANSISTORSCBCX69 series types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high current capability.MARKI

SOT89 PNP SILICON PLANAR BCX69MEDIUM POWER TRANSISTORISSUE 2 FEBRUARY 1995 FEATURES* High gain and low saturation voltages CCOMPLEMENTARY TYPE BCX68PARTMARKING DETAIL BCX69 CJEBCX69-16 CGCBCX69-25 CHBSOT89ABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITCollector-Base Voltage VCBO -25 VCollector-Emitter Voltage VCEO -20 VEmitter-Bas

SOT89 PNP SILICON PLANAR BCX69MEDIUM POWER TRANSISTORISSUE 2 FEBRUARY 1995 FEATURES* High gain and low saturation voltages CCOMPLEMENTARY TYPE BCX68PARTMARKING DETAIL BCX69 CJEBCX69-16 CGCBCX69-25 CHBSOT89ABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITCollector-Base Voltage VCBO -25 VCollector-Emitter Voltage VCEO -20 VEmitter-Bas

BCX69TRANSISTOR (PNP) FEATURES SOT-89 For general AF applications High collector current 1. BASE High current gain Low collector-emitter saturation voltage 2. COLLECTOR 1 Complementary type: BCX68 (NPN) 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -25 V VCEO Collector-Emit

BCX69 SOT-89 Transistor(PNP)1. BASE SOT-891 2. COLLECTOR 4.6B2 4.41.61.81.41.43 3. EMITTER 2.64.252.43.75Features 0.8MIN0.53 For general AF applications 0.400.480.442x)0.13 B0.35 0.37 High collector current 1.53.0 High current gain Dimensions in inches and (millimeters) Low collector-emitter saturation voltage Com

SMD Type TransistorsPNP TransistorsBCX69 (KCX69) Features For general AF applications1.70 0.1 High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCX 68 (NPN)0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Volta