BTA928AK3 - описание и поиск аналогов

Spec. No. C809K3 Issued Date 2013.04.19 CYStech Electronics Corp. Revised Date 2013.12.25 Page No. 1/8 PNP Epitaxial Planar Transistor BTA928AK3 Features Low V , V = -147mV (Typ.) @ I /I =-500mA/-10mA CE(SAT) CE(SAT) C B Complementary to BTC2328AK3 Pb-free lead plating and halogen-free package Symbol Outline BTA928AK3 TO-92L B Base C Collector

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTA92LT1/D High Voltage Transistors * MMBTA92LT1 COLLECTOR PNP Silicon 3 MMBTA93LT1 *Motorola Preferred Device 1 BASE 2 EMITTER 3 MAXIMUM RATINGS 1 Rating Symbol MMBTA92 MMBTA93 Unit 2 Collector Emitter Voltage VCEO 300 200 Vdc Collector Base Voltage VCBO 300 200 Vdc CASE 318 08, STYLE 6 SOT

DISCRETE SEMICONDUCTORS DATA SHEET MMBTA92 PNP high-voltage transistor Product specification 2004 Jan 16 Supersedes data of 2000 Apr 11 Philips Semiconductors Product specification PNP high-voltage transistor MMBTA92 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION High voltage (max. 300 V). 1 base 2 emitter APPLICATIONS 3 collector Telephony Professi

DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBTA92 PNP high-voltage transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification PNP high-voltage transistor MMBTA92 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION High voltage (max. 300 V). 1 base 2 emitter APPLICATIONS 3 collector Telephony Professional commun

DISCRETE SEMICONDUCTORS DATA SHEET PMBTA92 PNP high-voltage transistor Product data sheet 2004 Jan 22 Supersedes data of 1999 Apr 13 NXP Semiconductors Product data sheet PNP high-voltage transistor PMBTA92 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION High voltage (max. 300 V). 1 base 2 emitter APPLICATIONS 3 collector Telephony Professional com

MMBTA92 Small signal PNP transistor Features Miniature SOT-23 plastic package for surface mounting circuits Tape and reel packaging The NPN complementary type is MMBTA42 Applications Video amplifier circuits (rgb cathode current control) SOT-23 Telephone wireline interface (hook switches, dialer circuits) Description Figure 1. Intenal schematic diagram The d

MPSA92 MMBTA92 PZTA92 C C E E C B C TO-92 B SOT-23 B SOT-223 E Mark 2D PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 300 V VCBO Collector-Base Voltage 300 V VEBO Emitter-Base Voltage 5.0

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

DISCRETE SEMICONDUCTORS DATA SHEET PMBTA92 PNP high-voltage transistor Product data sheet 2004 Jan 22 Supersedes data of 1999 Apr 13 NXP Semiconductors Product data sheet PNP high-voltage transistor PMBTA92 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION High voltage (max. 300 V). 1 base 2 emitter APPLICATIONS 3 collector Telephony Professional com

SMBTA 92M PNP Silicon High-Voltage Transistor 4 High breakdown voltage Low collector-emitter saturation voltage 5 Complementary type SMBTA 42M (NPN) 3 2 1 VPW05980 Type Marking Ordering Code Pin Configuration Package SMBTA 92M s2D Q62702-A1244 1 = B 2 = C 3 = E 4=n.c. 5 = C SCT-595 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 300 V Colle

PNP Silicon Transistors for High Voltages SMBTA 92 SMBTA 93 High breakdown voltage Low collector-emitter saturation voltage Complementary types SMBTA 42, SMBTA 43 (NPN) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 SMBTA 92 s2D Q68000-A6479 B E C SOT-23 SMBTA 93 s2E Q68000-A6483 Maximum Ratings Parameter Symbol Values Unit SMBTA 92 SMBTA 93 Collect

MMBTA92 300V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 300V Case SOT-23 Ideal for Medium Power Amplification and Switching Case Material Molded Plastic, Green Molding Compound; Complementary NPN Type MMBTA42 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Moisture Sens

MMBTA92 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Epitaxial Planar Die Construction A SOT-23 Complementary NPN Types Available (MMBTA42) C Dim Min Max Ideal for Medium Power Amplification and Switching A 0.37 0.51 B C Lead, Halogen and Antimony Free, RoHS Compliant B 1.20 1.40 "Green"

SMBTA92/MMBTA92 PNP Silicon High-Voltage Transistors Suitable for video output stages in TV sets 2 3 and switching power supplies 1 High breakdown voltage Low collector-emitter saturation voltage Complementary types SMBTA42 / MMBT42 (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package SMBTA92/MMBTA92

SMBTA92/MMBTA92 PNP Silicon High-Voltage Transistors Suitable for video output stages in TV sets 2 3 and switching power supplies 1 High breakdown voltage Low collector-emitter saturation voltage Complementary types SMBTA92 / MMBT92 (NPN) Pb-free (RoHS compliant) package1) Qualified according AEC Q101 Type Marking Pin Configuration Package SMBTA92/MMBTA

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components MMBTA92 CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Surface Mount SOT-23 Package PNP Silicon High Capable of 300mWatts of Power Dissipation Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Voltage Transistor

MMBTA92L, SMMBTA92L, MMBTA93L High Voltage Transistors PNP Silicon http //onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR Site and Control Change Requirements; AEC-Q101 Qualified and 3 PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE MAXIMUM RATINGS 2 Rating Symbol 92 93 Unit EMITT

MMBTA92L, SMMBTA92L, MMBTA93L High Voltage Transistors PNP Silicon http //onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR Site and Control Change Requirements; AEC-Q101 Qualified and 3 PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE MAXIMUM RATINGS 2 Rating Symbol 92 93 Unit EMITT

MMBTA92L, SMMBTA92L, MMBTA93L High Voltage Transistors PNP Silicon www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR Site and Control Change Requirements; AEC-Q101 Qualified and 3 PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE MAXIMUM RATINGS 2 Rating Symbol 92 93 Unit EMITTER

MMBTA92LT1G, MMBTA93LT1G High Voltage Transistors PNP Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 MAXIMUM RATINGS 1 Rating Symbol 92 93 Unit BASE Collector-Emitter Voltage VCEO -300 -200 Vdc Collector-Base Voltage VCBO -300 -200 Vdc 2 EMITTER Emitter-Base Voltage VEBO -5.0 -5.0 Vdc Collector Curren

UNISONIC TECHNOLOGIES CO., LTD MMBTA92 PNP SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR 3 DESCRIPTION The UTC MMBTA92 are high voltage PNP transistors, designed 1 for telephone signal switching and for high voltage amplifier. 2 SOT-23 FEATURES (JEDEC TO-236) * High Collector-Emitter voltage VCEO= -300V * Collector Dissipation PC(MAX)=350mW ORDERING INFOR

MMBTA92 PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES Dim Min Max Pb-free is available. A 2.800 3.040 Power dissipation & Collector current B 1.200 1.400 Pcm 0.3W Icm -0.3A High voltage V(BR) -300V C 0.890 1.110 A D 0.370 0.500 L G 1.780 2.040 3 H 0.013 0.100 COLLECTO

MMBTA92W PNP Silicon Elektronische Bauelemente General Purpose Transistor MMBTA92W 300 VCE = 10 Vdc TJ = +125 C 250 200 25 C 150 -55 C 100 50 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain 100 150 Cib @ 1MHz 130 110 10 90 Ccb @ 1MHz 70 1.0 50 TJ = 25 C VCE = 20 Vdc 30 F = 20 MHz 0.1 10 0.1 1.0 10 100 1000 1 3 5 7 9 11 13 15 17 19 2

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBTA92 CMBTA93 SILICON EPITAXIAL TRANSISTORS P N P transistor Marking PACKAGE OUTLINE DETAILS CMBTA92 = 2D ALL DIMENSIONS IN mm CMBTA93 = 2E Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS CMBT A92 A93 Collector base

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBTA92 TRANSISTOR (PNP) 1. BASE FEATURES 2. EMITTER 3. COLLECTOR High voltage transistor MARKING 2D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Bas

SEMICONDUCTOR MMBTA92/93 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION. E L B L FEATURES DIM MILLIMETERS Complementary to MMBTA42/43. _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 MAXIMUM RATING (Ta=25 ) 1 G 1.90 H 0.95 CHARACTERISTIC SYMBOL RATING UNIT J 0.13+0.10/-0.05 K 0.00 0.1

MMBTA92 TRANSISTOR(PNP) SOT-23 FEATURES 1. BASE 2. EMITTER High voltage transistor 3. COLLECTOR MARKING 2D MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -300 mA PC Collector Power Dissipation 300 m

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GMA92 GMA93 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Unit GMA92 GMA93 Collector-Emitter Voltage VCEO -300 -200 Vdc -

MMBTA92 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features High voltage transistor MARKING 2D Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous

MMBTA92 COLLECTOR High-Voltage PNP Transistor 3 3 Surface Mount 1 1 2 BASE P b Lead(Pb)-Free 2 SOT-23 EMITTER Maximum Ratings Rating Symbol Value Unit Collector-E m itter Voltage V -3 0 0 Vdc CE O Collector-B as e Voltage VCB O -3 0 0 Vdc E m itter-B as e VOltage VE B O -5 . 0 Vdc Collector Current-Continuous IC mAdc -5 0 0 Thermal Characteristics Characteristics Symbol

FM120-M WILLAS THRU MMBTA9xLT1 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V High Voltage Transistor SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimize board

Spec. No. HE6845 HI-SINCERITY Issued Date 1994.07.29 Revised Date 2004.09.07 MICROELECTRONICS CORP. Page No. 1/4 HMBTA92 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBTA92 is designed for application as a video output to drive color CRT, or as a dialer circuit in electronics telephone. SOT-23 Absolute Maximum Ratings Maximum Temperatures Storage Temperature.......

MMBTA92 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features , , , MMBTA42 High voltage, low saturation voltage, low collector output capacitance, complementary pair with MMBTA42. / Applications

MMBTA92T Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features , , , MMBTA42T High voltage, low saturation voltage, low collector output capacitance, complementary pair with MMBTA42T. / Applications

MMBTA92 / MMBTA93 PNP Silicon High Voltage Transistors for high voltage switching and amplifier applications. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage MMBTA92 300 V -VCBO MMBTA93 200 Collector Emitter Voltage MMBTA92 300 V -VCEO MMBTA93 200 5 V Emitter Base Voltage -VEBO 500 mA Collector Cur

LESHAN RADIO COMPANY, LTD. High Voltage Transistor PNP Silicon LMBTA92LT1G FEATURE LMBTA93LT1G High voltage. S-LMBTA92LT1G For Telephony or Professional communication equipment applications. We declare that the material of product compliance with RoHS requirements. S-LMBTA93LT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requireme

LESHAN RADIO COMPANY, LTD. High Voltage Transistor PNP Silicon LMBTA92LT1G FEATURE LMBTA93LT1G High voltage. S-LMBTA92LT1G For Telephony or Professional communication equipment applications. We declare that the material of product compliance with RoHS requirements. S-LMBTA93LT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requireme

LESHAN RADIO COMPANY, LTD. High Voltage Transistor PNP Silicon LMBTA92LT1G FEATURE LMBTA93LT1G High voltage. S-LMBTA92LT1G For Telephony or Professional communication equipment applications. We declare that the material of product compliance with RoHS requirements. S-LMBTA93LT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requireme

SEMICONDUCTOR MMBTA92/93 TECHNICAL DATA High Voltage Transistor PNP Silicon FEATURE High voltage. For Telephony or Professional communication equipment applications. We declare that the material of product compliance with RoHS requirements. 3 2 DEVICE MARKING AND ORDERING INFORMATION 1 Device Marking Shipping SOT 23 MMBTA92LT1G 2D 3000/Tape&Reel MMBTA92LT3G 2D 10000/Tape&Ree

SEMICONDUCTOR MMBTA92F TECHNICAL DATA TRANSISTOR (PNP) MMBTA92F A C H G FEATURES Low Collector-Emitter Saturation Voltage High Breakdown Voltage D D K F F MARKING A92 DIM MILLIMETERS A 4.70 MAX _ + B 2.50 0.20 C 1.70 MAX 1 2 3 D 0.45+0.15/-0.10 MAXIMUM RATINGS (Ta=25 unless otherwise noted) E 4.25 MAX _ + F 1.50 0.10 Symbol Parameter Value Unit G 0.40 T

SMD Type Transistors PNP Transistors MMBTA92 (KMBTA92) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 Features 3 High voltage transistor Low collector-emitter saturation voltage Complementary to MMBTA42 (NPN) 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

General Purpose Transistor MMBTA92-G (PNP) RoHS Device Features SOT-23 0.119(3.00) -High voltage transistor. 0.110(2.80) 3 0.056(1.40) 0.047(1.20) Diagram 1 2 0.079(2.00) Collector 0.071(1.80) 3 0.006(0.15) 0.003(0.08) 1 0.041(1.05) 0.100(2.550) Base 0.035(0.90) 0.089(2.250) 2 0.004(0.10) max Emitter 0.020(0.50) 0.020(0.50) 0.012(0.30) 0.012(0.30) Dimensions in

MMBTA92 TRANSISTOR PNP TRANSISTOR PNP FEATURES SOT-23 High voltage transistor 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -200 mA ICM Collector Current -Pulsed -50

R UMW UMW MMBTA92 SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBTA92 TRANSISTOR (PNP) FEATURES 1. BASE 2. EMITTER High voltage transistor 3. COLLECTOR MARKING 2D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Curre

MMBTA92 FEATURES High Collector Current SOT-23 Complementary to MMBTA42 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -300 V CBO V Collector-Emitter Voltage CEO -300 V V Emitter-Base Voltage -5 V EBO IC Collector Current -0.2 A P Collector Power Dissipation 300 mW C R Thermal Resistance From Junction To

MMBTA9 2 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP ) Features SOT- 23 High voltage transistor Marking 2D Symbol Parameter Value Unit VCBO Collector-Base Voltage -300 V V Collector-Emitter Voltage -300 V CEO C V Emitter-Base Voltage -5 V EBO I Collector Current C -200 mA ICM Collector Current - Pulsed -500 mA P Collector Power Dissipation

MMBTA92 PNP High Voltage Amplifier FEATURES Epitaxial planar die construction. Complementary NPN type available (MMBTA42). Ideal for medium power amplification and switching. APPLICATIONS High voltage driver applications. SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value UNIT V collector-base voltage -300 V CBO V collector-

MMBTA92 SOT-23 Plastic-Encapsulate Transistor MMBTA92 TRANSISTOR (PNP) SOT-23 FEATURES High voltage transistor Marking 2D (3)C 1. BASE 2D 2. EMITTER 3. COLLECTOR (1)B (2)E MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V VCBO Collector-Base Voltage -300 VCEO Collector-Emitter Voltage V -300 VEBO Emitter-Base Voltage -5 V IC Co

www.msksemi.com MMBTA92-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (PNP) FEATURES High voltage transistor 1. BASE 2. EMITTER SOT 23 MARKING 2D 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collecto

Jingdao Microelectronics co.LTD MMBTA92 MMBTA92 SOT-23 PNP TRANSISTOR 3 FEATURES High Voltage Transistor 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol 2 Parameter Value Unit VCBO V 1.BASE Collector Base Voltage -300 2.EMITTER VCEO V Collector Emitter Voltage -300 3.COLLECTOR VEBO V Emitter Base V

MMBTA92 SOT-23 Plastic-Encapsulate Transistors MMBTA92 TRANSISTOR (PNP) SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR High voltage transistor MARKING 2D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continu

MMBTA92 TRANSISTOR (PNP) SOT-23 Plastic-Encapsulate Transistors SOT-23 FEATURES High voltage transistor 1 BASE 2 EMITTER 3 COLLECTOR MARKING 2D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -200 m

MMBTA92 SOT-23 PNP Transistors 3 2 1.Base Features 2.Emitter 1 3.Collector High voltage transistor Low collector-emitter saturation voltage Simplified outline(SOT-23) Complementary to MMBTA42 (NPN) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -300 Collector - Emitter Voltage VCEO -300 V Emitter

MMBTA92 TRANSI STOR (PNP) MARKING Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES High Breakdown Voltage MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -300 V Collector-Emitter Voltage VCEO -300 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -200 mA Collector Current -Puised ICM -

RoHS RoHS COMPLIANT COMPLIANT MMBTA92 PNP Silicon High Voltage Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Surface mount package ideally Suited for Automatic Insertion PNP Mechanical Data ackage SOT-23 P Terminals Tin plated leads, s

SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBTA92 TRANSISTOR (PNP) 1. BASE FEATURES 2. EMITTER 3. COLLECTOR High voltage transistor MARKING 2D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -200

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD MMBTA92/MMBTA93 MAXIMUM RATINGS Characteristic Symbol Unit (MMBTA92) (MMBTA93) Collector-Emitter Voltage VCEO -300 -200 Vdc - Collector-Base Voltage VCBO -300 -200 Vdc - Emitter-Base Voltage VEBO -6.0 -6.0 Vdc

MMBTA92 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE -300Volts POWER 300mWatts FEATURES PNP epitaxial silicon, planar design. Collector-emitter voltage VCE=-300V. Collector current IC=-0.3A. ansition frequency fT>200MHz @ IC=- Tr 20mAdc, VCE=-50Vdc, f=100MHz. In compliance with ER RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 Terminal

MMBTA92 BIPOLAR TRANSISTOR (PNP) FEATURES Complementary to MMBTA42 High breakdown voltage Low Collector-emitter saturation voltage Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A