BTA1270A3 - описание и поиск аналогов

Spec. No. C305A3 Issued Date 2013.01.16 CYStech Electronics Corp. Revised Date Page No. 1/6 General Purpose PNP Epitaxial Planar Transistor BTA1270A3 Description The BTA1270A3 is designed for using in driver stage of AF amplifier and general purpose amplification. Large IC , IC Max .= -0.6A Low VCE(sat), typically -0.09V at IC/IB = -100mA / -10mA. Ideal fo

Spec. No. C656F3 Issued Date 2007.02.02 CYStech Electronics Corp. Revised Date 2007.12.18 Page No. 1/5 PNP Epitaxial Planar Transistor BTA1210F3 Description The BTA1210F3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Features High BV CEO High DC current gain High current capability

Spec. No. C656J3 Issued Date 2004.05.12 CYStech Electronics Corp. Revised Date 2010.12.08 Page No. 1/7 PNP Epitaxial Planar Transistor BVCEO -120V BTA1210J3 IC -10A RCESAT 270m Description The BTA1210J3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Features High BV CEO High DC curr

Spec. No. C656FP Issued Date 2005.03.29 CYStech Electronics Corp. Revised Date 2013.09.17 Page No. 1/6 PNP Epitaxial Planar Transistor BTA1210FP Description The BTA1210FP is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Features High BV CEO High DC current gain High current capability

Spec. No. C656E3 Issued Date 2004.06.03 CYStech Electronics Corp. Revised Date 2013.10.11 Page No. 1/5 PNP Epitaxial Planar Transistor BTA1210E3 Description The BTA1210E3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Features High BV CEO High DC current gain High current capability

Spec. No. C656T3 Issued Date 2004.09.01 CYStech Electronics Corp. Revised Date 2007.12.18 Page No. 1/4 PNP Epitaxial Planar Transistor BTA1210T3 Description The BTA1210T3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Features High BV CEO High DC current gain High current capability

VBTA1220N www.VBsemi.com N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) c Qg (TYP.) 100 % Rg tested 0.270 at VGS = 4.5 V 0.75 20 1.4 nC 0.390 at VGS = 2.5 V 0.70 APPLICATIONS Smart phones, tablet PC s - DC/DC converters - Boost converters - Load switch, OVP switch SC-75 D G 1 G 3 D S 2 Top Vie