Биполярный транзистор BTA1270A3 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BTA1270A3
Маркировка: A1270
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.625 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 0.6 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 200 MHz
Ёмкость коллекторного перехода (Cc): 4.5 pf
Статический коэффициент передачи тока (hfe): 120
Корпус транзистора: TO92
Аналоги (замена) для BTA1270A3
BTA1270A3 Datasheet (PDF)
bta1270a3.pdf
Spec. No. : C305A3 Issued Date : 2013.01.16 CYStech Electronics Corp.Revised Date : Page No. : 1/6 General Purpose PNP Epitaxial Planar Transistor BTA1270A3Description The BTA1270A3 is designed for using in driver stage of AF amplifier and general purpose amplification. Large IC , IC Max .= -0.6A Low VCE(sat), typically -0.09V at IC/IB = -100mA / -10mA. Ideal fo
bta1210f3.pdf
Spec. No. : C656F3 Issued Date : 2007.02.02 CYStech Electronics Corp.Revised Date :2007.12.18 Page No. : 1/5 PNP Epitaxial Planar Transistor BTA1210F3 Description The BTA1210F3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Features High BV CEO High DC current gain High current capability
bta1210j3.pdf
Spec. No. : C656J3 Issued Date : 2004.05.12 CYStech Electronics Corp.Revised Date :2010.12.08 Page No. : 1/7 PNP Epitaxial Planar Transistor BVCEO -120VBTA1210J3 IC -10ARCESAT 270m Description The BTA1210J3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Features High BV CEO High DC curr
bta1210fp.pdf
Spec. No. : C656FP Issued Date : 2005.03.29 CYStech Electronics Corp.Revised Date :2013.09.17 Page No. : 1/6 PNP Epitaxial Planar Transistor BTA1210FP Description The BTA1210FP is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Features High BV CEO High DC current gain High current capability
bta1210e3.pdf
Spec. No. : C656E3 Issued Date : 2004.06.03 CYStech Electronics Corp.Revised Date :2013.10.11 Page No. : 1/5 PNP Epitaxial Planar Transistor BTA1210E3 Description The BTA1210E3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Features High BV CEO High DC current gain High current capability
bta1210t3.pdf
Spec. No. : C656T3 Issued Date : 2004.09.01 CYStech Electronics Corp.Revised Date :2007.12.18 Page No. : 1/4 PNP Epitaxial Planar Transistor BTA1210T3 Description The BTA1210T3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Features High BV CEO High DC current gain High current capability
vbta1220n.pdf
VBTA1220Nwww.VBsemi.comN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) c Qg (TYP.) 100 % Rg tested0.270 at VGS = 4.5 V0.7520 1.4 nC0.390 at VGS = 2.5 V0.70APPLICATIONS Smart phones, tablet PCs- DC/DC converters- Boost converters- Load switch, OVP switchSC-75 DG1G3 DS 2Top Vie
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050