BTA1727L3 - описание и поиск аналогов

 ..1. Size:162K  cystek
 bta1727l3.pdf 

Spec. No. C236L3 Issued Date 2005.08.16 CYStech Electronics Corp. Revised Date 2005.08.18 Page No. 1/4 High Voltage PNP Epitaxial Planar Transistor BTA1727L3 Features High breakdown voltage, BV =-400V CEO Low saturation voltage High switching speed. Complementary to BTD2568L3 Pb-free package Symbol Outline BTA1727L3 SOT-223 C E C B

 8.1. Size:271K  cystek
 bta1721n3.pdf 

Spec. No. C308N3 Issued Date 2002.06.11 CYStech Electronics Corp. Revised Date 2013.10.31 Page No. 1/7 General Purpose PNP Epitaxial Planar Transistor BTA1721N3 Description High breakdown voltage. Low collector output capacitance. Ideal for chroma circuit. Pb-free lead plating and halogen-free package Symbol Outline BTA1721N3 SOT-23 B Base

 9.1. Size:258K  cystek
 bta1759n3.pdf 

Spec. No. C309N3 Issued Date 2003.05.09 CYStech Electronics Corp. Revised Date 2010.10.19 Page No. 1/6 High Voltage PNP Epitaxial Planar Transistor BVCEO -400V BTA1759N3 IC -0.3A VCESAT(TYP) -0.08V Description High breakdown voltage. (BV =-400V) CEO Low saturation voltage, typical V =-0.2V at Ic/I =-20mA/-2mA. CE(sat) B Wide SOA (safe operation area).

 9.2. Size:323K  cystek
 bta1774c3.pdf 

Spec. No. C306C3 Issued Date 2004.03.03 CYStech Electronics Corp. Revised Date 2014.03.11 Page No. 1/8 General Purpose PNP Epitaxial Planar Transistor BTA1774C3 Description The BTA1774C3 is designed for use in driver stage of AF amplifier and general purpose amplification. High HFE and excellent linearity Complementary to BTC4617C3. Pb-free lead pla

 9.3. Size:262K  cystek
 bta1797m3.pdf 

Spec. No. C623M3 Issued Date 2013.03.19 CYStech Electronics Corp. Revised Date 2013.08.12 Page No. 1/8 Silicon PNP Epitaxial Planar Transistor BVCEO -50V IC -2A BTA1797M3 VCESAT(Max) -0.2V Description Low saturation voltage, V = -0.2V(max.) at I /I =-1A/-50mA. CE(SAT) C B High current capability. Excellent DC current gain characteristics. Pb-free

 9.4. Size:233K  cystek
 bta1759a3.pdf 

Spec. No. C309A3-R Issued Date 2003.10.15 CYStech Electronics Corp. Revised Date 2012.06.14 Page No. 1/6 High Voltage PNP Epitaxial Planar Transistor BTA1759A3 Description High breakdown voltage. (BV =-400V) CEO Low saturation voltage, typical V = -0.2V at Ic / I = -20mA /-2mA. CE(sat) B Wide SOA (safe operation area). Complementary to BTC4505A3.