Spec. No. : C305A3 Issued Date : 2007.10.16 CYStech Electronics Corp.Revised Date : 2012.04.12 Page No. : 1/6 General Purpose PNP Epitaxial Planar Transistor BTA4403A3Description The BTA4403A3 is designed for using in driver stage of AF amplifier and general purpose amplification. Large IC , IC Max .= -0.6A Low VCE(sat), typically -0.2V at IC/IB = -300mA / -30mA

PMBTA44400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistorRev. 01 22 February 2008 Product data sheet1. Product profile1.1 General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in aSOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.1.2 Features Low current (max. 300 mA) High voltage (max. 400 V) AEC-Q101 qua

PMBTA44400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistorRev. 01 22 February 2008 Product data sheet1. Product profile1.1 General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in aSOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.1.2 Features Low current (max. 300 mA) High voltage (max. 400 V) AEC-Q101 qua

MMBTA44Features Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingNPN Silicon High Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information)Voltage TransistorMaximum Ratings @ 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +1

UNISONIC TECHNOLOGIES CO., LTD MMBTA44/45 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTORS FEATURES 3*Collector-Emitter voltage: V =400V (UTC MMBTA44) CEO V =350V (UTC MMBTA45) CEO*Collector current up to 300mA 1*Complement to UTC MMBTA94/93 2*Power Dissipation: P (max)=350mW DSOT-23(JEDEC TO-236) ORDERING INFORMATION Pin Assignment Ordering Number Pa

MMBTA44 500V, 0.2A NPN Silicon Epitaxial Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23FEATURES High Voltage Transistor AL33MARKING Top View C B11 23D 2K EDPACKING INFORMATION Collector H JF GPackage MPQ Leader Size Millimeter MillimeterREF. REF.SOT-23 3K 7 in

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR CMBTA44PIN CONFIGURATION (NPN)SOT-231 = BASE2 = EMITTERFormed SMD Package3 = COLLECTOR312Marking Code is =3ZDesigned for Extremely High Voltage ApplicationsABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL VALUE UNITSCollector Base

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA44 TRANSISTOR (NPN) SOT23 FEATURES High Collector-Emitter Voltage Complement to MMBTA94 MARKING: 3D 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V V Collector-Emitt

SEMICONDUCTOR MMBTA44TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH VOLTAGE APPLICATION.FEATURES High Breakdown Voltage.Collector Power Dissipation : PC=350mW.MAXIMUM RATING (Ta=25 )CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-BaseVoltage 450 VVCEOCollector-EmitterVoltage 400 VVEBOEmitter-Base Voltage 6 VICCollector Current 300 mAPC *Collector Power Dissi

MMBTA44TRANSISTOR (NPN) FEATURES High Collector-Emitter Voltage Complement to MMBTA94 MARKING: 3D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V SOT23 V Collector-Emitter Voltage 400 V CEOV Emitter-Base Voltage 6 V EBOI Collector Current-Continuous 200 mAC I Collector Current -Pulsed 300

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GMA44MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Rating Unit VCEO 400 VCollector-Emitter Voltage -Collect

MMBTA44Transistor(NPN)SOT-23Features Power dissipation: PCM = 0.35W (Tamb=25) ICM = 0.2A Collector current: Collector-base voltage: V(BR)CBO = 400V Operating and storage junction temperature range T J, Tstg: -55 to +150 Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test co

MMBTA44COLLECTOR3High-Voltage NPN Transistor SOT-233Surface Mount1BASE1 22EMITTERMaximum RatingsRating Symbol Value UnitC ollector-E mitter V oltage V 400 VdcCEOC ollector-B ase V oltage VCBO 450 VdcE mitter-B as e V Oltage VEBO 6.0 VdcC ollector C urrent-C ontinuous IC300 mAdcThermal CharacteristicsCharacteristics Symbol Max UnitTotal Device Dissipat

Spec. No. : HN200208HI-SINCERITYIssued Date : 1993.06.23Revised Date : 2004.09.08MICROELECTRONICS CORP.Page No. : 1/4HMBTA44NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HMBTA44 is designed for application requires high voltage.FeaturesSOT-23 High voltage: VCEO=400V(min) at IC=1mA High current: IC=300mA at 25C Complementary with HMBTA94Absolute Maximum R

MMBTA44N(BR3DA44N) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-223 NPN Silicon NPN transistor in a SOT-223 Plastic Package. / Features High voltage. / Applications High voltage control circuit . / Equivalent Circuit / Pinning 3 2 1 PIN1B

MMBTA44T(BR3DG44T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features High voltage. / Applications High voltage control circuit. / Equivalent Circuit / Pinning 1 2 3 PIN1Base

MMBTA44 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features ,High voltage, Low saturation voltage. / Applications High voltage control circuit. / Equivalent Circuit

LESHAN RADIO COMPANY, LTD.LMBTA44LT1G LMBTA44LT1GS-LMBTA44LT1GNPN EPITAXIAL PLANAR TRANSISTORWe declare that the material of productcompliance with RoHS requirements.3DescriptionThe LMBTA44LT1G is designed for application 1that requires high voltage.2Features High Breakdown Voltage: VCEO=400(Min.) at IC=1mASOT 23 Complementary to LMBTA94LT1G S- Prefix

SEMICONDUCTORMMBTA44TECHNICAL DATANPN EPITAXIAL PLANAR TRANSISTORWe declare that the material of product compliance with RoHS requirements.3Description2The MMBTA44 is designed for application that requires high voltage. 1Features SOT 23 High Breakdown Voltage: VCEO=400(Min.) at IC=1mA Complementary to MMBTA94COLLECTOR3DEVICE MARKING 1MMBTA44 = 3DB

SMD Type TransistorsNPN TransistorsMMBTA44 (KMBTA44)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features High Collector-Emitter Voltage1 2+0.1+0.05 Complement to MMBTA94 0.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collector - E

DC COMPONENTS CO., LTD.DMBTA44DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for applications requiring high breakdown voltage.SOT-23.020(0.50)Pinning.012(0.30)1 = Base 2 = Emitter 3.063(1.60) .108(0.65)3 = Collector.055(1.40) .089(0.25)1 2Absolute Maximum Ratings(TA=25oC).045(1.15).034(0.85)Char

MMBTA44General Purpose Transistors NPN SiliconProduct Summary VCEO 400V Ic200mA PC 350mWFEATURE High Collector-Emitter Voltage Complement to MMBTA94 SOT-23 MAXIMUM RATINGS (T =25unless otherwise noted)AParameter Symbol Limit UnitCollector-Base Voltage 400 VVCBOCollector-Emitter Voltage 400 V VCEOEmitter-Base Voltage VEBO V6A

SOT-23 Plastic-Encapsulate TransistorsFormosa MSMMBTA44 TRANSISTOR (NPN) FEATURES High Collector-Emitter Voltage SOT23 Complement to MMBTA94 MARKING: 3D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V 1. BASE 2. EMITTER V Collector-Emitter Voltage 400 V CEO3. COLLECTOR V Emitter-Base Voltage

MMBTA4 4SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N )Features SOT- 23 High Collector-Emitter Voltage Complement to MMBTA94 Marking: 3DSymbol Parameter Value Unit VCBO Collector-Base Voltage 400 V V Collector-Emitter Voltage 400 V CEOCV Emitter-Base Voltage 6 V EBOI Collector Current C200mA P Collector Power Dissipation 350 mW

www.msksemi.comMMBTA44-MSSemiconductor CompianceSemiconductor CompianceTRANSISTOR (NPN)FEATURES High Collector-Emitter Voltage Complement to MMBTA94-MS1. BASEMARKING: 3D 2. EMITTERSOT23 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 400 VCBOV Collector-Emitter Voltage 400 V CEOV

MMBTA44 NPN Transistor FeaturesSOT-23 (TO-236) For High Voltage Switching and AmplifierApplications.1.Base 2.Emitter 3.CollectorAbsolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value UnitCollector Base Voltage V 500 V CBOCollector Emitter Voltage V 400 V CEOEmitter Base Voltage V 6 V EBOCollector Cur

MMBTA44SOT-23 Plastic-Encapsulate Transistors MMBTA44 TRANSISTOR (NPN)SOT 23 FEATURES High Collector-Emitter Voltage Complement to MMBTA941. BASEMARKING: 3D 2. EMITTER3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 400 VVCEO Collector-Emitter Voltage 400 VVEBO Emitter-Base Voltage 6 VIC Co

MMBTA44 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBTA94 ; Complementary to MMBTA94 350mW; Power Dissipation of 350mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Package

RoHS RoHSCOMPLIANT COMPLIANTMMBTA44 NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 High Conductance Surface mount package ideally Suited for Automatic Insertion Mechanical Data Package: SOT-23 Molding compound meets UL 94 V-0 flammabilit

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDMMBTA44 MAXIMUM RATINGS Characteristic Symbol Rating Unit VCEO 400 VCollector-Emitter Voltage -Collector-Base Voltage - VCBO 400 VVEBOEmitter-Base Voltage - 7 VCollector Current

MMBTA44BIPOLAR TRANSISTOR (NPN)FEATURES Complementary to MMBTA94 High breakdown voltage Low Collector-emitter saturation voltage Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)A

HMBTA44NPN-TRANSISTORNPN, 200mA, 400V NPN HMBTA44NPN High Voltage Transistor SMDHMBTA44LT1NPN, BECHigh breakdown voltageGeneral Purpose TransistorsLow collector-emitter saturation voltageComplementary to HMBTA94A44Transistor Polarity: NPNMMBTA