Справочник транзисторов. BTB1236AJ3

 

Биполярный транзистор BTB1236AJ3 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BTB1236AJ3
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 10 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 180 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 160 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 1.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 140 MHz
   Ёмкость коллекторного перехода (Cc): 27 pf
   Статический коэффициент передачи тока (hfe): 180
   Корпус транзистора: TO252

 Аналоги (замена) для BTB1236AJ3

 

 

BTB1236AJ3 Datasheet (PDF)

 ..1. Size:290K  cystek
btb1236aj3.pdf

BTB1236AJ3
BTB1236AJ3

Spec. No. : C315J3 Issued Date : 2010.12.31 CYStech Electronics Corp.Revised Date : Page No. : 1/6 Silicon PNP Epitaxial Planar Transistor BVCEO -160VIC -1.5ABTB1236AJ3RCESAT(MAX) 600m Description High BV CEO High current capability RoHS compliant package Symbol Outline BTB1236AJ3 TO-252(DPAK) BBase CCollector EEmitter B C E Ab

 6.1. Size:194K  cystek
btb1236a3.pdf

BTB1236AJ3
BTB1236AJ3

Spec. No. : C854A3 Issued Date : 2004.07.28 CYStech Electronics Corp.Revised Date : 2012.04.27 Page No. : 1/6 Silicon PNP Epitaxial Planar Transistor BTB1236A3Description High BV CEO High current capability Pb-free lead plating package Symbol Outline BTB1236A3 TO-92 BBase CCollector EEmitter E C BAbsolute Maximum Ratings (Ta=25C) Par

 6.2. Size:216K  cystek
btb1236ai3.pdf

BTB1236AJ3
BTB1236AJ3

Spec. No. : C315I3 Issued Date : 2012.01.16 CYStech Electronics Corp.Revised Date : Page No. : 1/5 Silicon PNP Epitaxial Planar Transistor BTB1236AI3Description High BV CEO High current capability Complementary to BTD1857AI3 RoHS compliant package Symbol Outline BTB1236AI3 TO-251 BBase CCollector EEmitter B C E Absolute Maximum Ra

 6.3. Size:242K  cystek
btb1236am3.pdf

BTB1236AJ3
BTB1236AJ3

Spec. No. : C854M3 Issued Date : 2004.08.20 CYStech Electronics Corp.Revised Date : 2013.08.12 Page No. : 1/7 Silicon PNP Epitaxial Planar Transistor BTB1236AM3Description High BV CEO High current capability RoHS compliant package Symbol Outline BTB1236AM3 SOT-89 BBase CCollector EEmitter B C E Absolute Maximum Ratings (Ta=25C) Para

 6.4. Size:218K  cystek
btb1236afp.pdf

BTB1236AJ3
BTB1236AJ3

Spec. No. : C854FP Issued Date : 2011.09.13 CYStech Electronics Corp.Revised Date : Page No. : 1/5 Silicon PNP Epitaxial Planar Transistor BTB1236AFPDescription High BV CEO High current capability RoHS compliant package Symbol Outline BTB1236AFP TO-220FP BBase CCollector EEmitter B C E Absolute Maximum Ratings (Ta=25C) Parameter Sym

 6.5. Size:158K  cystek
btb1236at3.pdf

BTB1236AJ3
BTB1236AJ3

Spec. No. : C854T3 Issued Date : 2005.08.23 CYStech Electronics Corp.Revised Date :2006.07.11 Page No. : 1/4 Silicon PNP Epitaxial Planar Transistor BTB1236AT3Description High BV CEO High current capability Pb-free package Symbol Outline BTB1236AT3 TO-126 BBase CCollector EEmitter E C BAbsolute Maximum Ratings (Ta=25C) Parameter Sy

 6.6. Size:149K  cystek
btb1236ae3.pdf

BTB1236AJ3
BTB1236AJ3

Spec. No. : C854E3 Issued Date : 2004.07.28 CYStech Electronics Corp. Revised Date : Page No. : 1/4 Silicon PNP Epitaxial Planar Transistor BTB1236AE3Description High BV CEO High current capability Symbol Outline BTB1236AE3 TO-220AB BBase CCollector EEmitter B C E Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits UnitCollector-

 6.7. Size:223K  cystek
btb1236ak3.pdf

BTB1236AJ3
BTB1236AJ3

Spec. No. : C854K3 Issued Date : 2012.10.08 CYStech Electronics Corp.Revised Date : Page No. : 1/6 Silicon PNP Epitaxial Planar Transistor BTB1236AK3Description High BV CEO High current capability Pb-free lead plating package Symbol Outline TO-92L BTB1236AK3 BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C) Parameter Symbol

 6.8. Size:142K  cystek
btb1236al3.pdf

BTB1236AJ3
BTB1236AJ3

Spec. No. : C854L3 Issued Date : 2004.07.28 CYStech Electronics Corp. Revised Date : Page No. : 1/4 Silicon PNP Epitaxial Planar Transistor BTB1236AL3Description High BV CEO High current capability SymbolBTB1236AL3 BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits UnitCollector-Base Voltage VCBO -180 VCol

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