Биполярный транзистор BTB1238AM3 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BTB1238AM3
Маркировка: AD
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 240 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 240 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 140 MHz
Ёмкость коллекторного перехода (Cc): 27 pf
Статический коэффициент передачи тока (hfe): 120
Корпус транзистора: SOT89
Аналоги (замена) для BTB1238AM3
BTB1238AM3 Datasheet (PDF)
btb1238am3.pdf
Spec. No. : C849M3 Issued Date : 2010.10.28 CYStech Electronics Corp.Revised Date : 2013.10.31 Page No. : 1/7 Silicon PNP Epitaxial Planar Transistor BVCEO -240VIC -1ABTB1238AM3VCESAT(Max) -0.3VDescription High BV CEO High current capability Pb-free lead plating and halogen-free package Symbol Outline BTB1238AM3 SOT-89 BBase CCollector E
btb1238al3.pdf
Spec. No. : C849L3 Issued Date : 2012.08.28 CYStech Electronics Corp.Revised Date : Page No. : 1/7 Silicon PNP Epitaxial Planar Transistor BVCEO -240VIC -1ABTB1238AL3VCESAT(Max) -0.3VDescription High BV CEO High current capability RoHS compliant package Pb-free lead plating and halogen-free package Symbol Outline BTB1238AL3 SOT-223 C BBa
btb1236aj3.pdf
Spec. No. : C315J3 Issued Date : 2010.12.31 CYStech Electronics Corp.Revised Date : Page No. : 1/6 Silicon PNP Epitaxial Planar Transistor BVCEO -160VIC -1.5ABTB1236AJ3RCESAT(MAX) 600m Description High BV CEO High current capability RoHS compliant package Symbol Outline BTB1236AJ3 TO-252(DPAK) BBase CCollector EEmitter B C E Ab
btb1236a3.pdf
Spec. No. : C854A3 Issued Date : 2004.07.28 CYStech Electronics Corp.Revised Date : 2012.04.27 Page No. : 1/6 Silicon PNP Epitaxial Planar Transistor BTB1236A3Description High BV CEO High current capability Pb-free lead plating package Symbol Outline BTB1236A3 TO-92 BBase CCollector EEmitter E C BAbsolute Maximum Ratings (Ta=25C) Par
btb1236ai3.pdf
Spec. No. : C315I3 Issued Date : 2012.01.16 CYStech Electronics Corp.Revised Date : Page No. : 1/5 Silicon PNP Epitaxial Planar Transistor BTB1236AI3Description High BV CEO High current capability Complementary to BTD1857AI3 RoHS compliant package Symbol Outline BTB1236AI3 TO-251 BBase CCollector EEmitter B C E Absolute Maximum Ra
btb1236am3.pdf
Spec. No. : C854M3 Issued Date : 2004.08.20 CYStech Electronics Corp.Revised Date : 2013.08.12 Page No. : 1/7 Silicon PNP Epitaxial Planar Transistor BTB1236AM3Description High BV CEO High current capability RoHS compliant package Symbol Outline BTB1236AM3 SOT-89 BBase CCollector EEmitter B C E Absolute Maximum Ratings (Ta=25C) Para
btb1236afp.pdf
Spec. No. : C854FP Issued Date : 2011.09.13 CYStech Electronics Corp.Revised Date : Page No. : 1/5 Silicon PNP Epitaxial Planar Transistor BTB1236AFPDescription High BV CEO High current capability RoHS compliant package Symbol Outline BTB1236AFP TO-220FP BBase CCollector EEmitter B C E Absolute Maximum Ratings (Ta=25C) Parameter Sym
btb1236at3.pdf
Spec. No. : C854T3 Issued Date : 2005.08.23 CYStech Electronics Corp.Revised Date :2006.07.11 Page No. : 1/4 Silicon PNP Epitaxial Planar Transistor BTB1236AT3Description High BV CEO High current capability Pb-free package Symbol Outline BTB1236AT3 TO-126 BBase CCollector EEmitter E C BAbsolute Maximum Ratings (Ta=25C) Parameter Sy
btb1236ae3.pdf
Spec. No. : C854E3 Issued Date : 2004.07.28 CYStech Electronics Corp. Revised Date : Page No. : 1/4 Silicon PNP Epitaxial Planar Transistor BTB1236AE3Description High BV CEO High current capability Symbol Outline BTB1236AE3 TO-220AB BBase CCollector EEmitter B C E Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits UnitCollector-
btb1236ak3.pdf
Spec. No. : C854K3 Issued Date : 2012.10.08 CYStech Electronics Corp.Revised Date : Page No. : 1/6 Silicon PNP Epitaxial Planar Transistor BTB1236AK3Description High BV CEO High current capability Pb-free lead plating package Symbol Outline TO-92L BTB1236AK3 BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C) Parameter Symbol
btb1236al3.pdf
Spec. No. : C854L3 Issued Date : 2004.07.28 CYStech Electronics Corp. Revised Date : Page No. : 1/4 Silicon PNP Epitaxial Planar Transistor BTB1236AL3Description High BV CEO High current capability SymbolBTB1236AL3 BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits UnitCollector-Base Voltage VCBO -180 VCol
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BDS18SMD
History: BDS18SMD
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050