Биполярный транзистор BTB1412J3 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BTB1412J3
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 10 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 120 MHz
Ёмкость коллекторного перехода (Cc): 60 pf
Статический коэффициент передачи тока (hfe): 180
Корпус транзистора: TO252
Аналоги (замена) для BTB1412J3
BTB1412J3 Datasheet (PDF)
btb1412j3.pdf
Spec. No. : C816J3 Issued Date : 2003.05.15 CYStech Electronics Corp.Revised Date : 2013.04.18 Page No. : 1/7 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -30V IC -5ABTB1412J3 RCESAT 75m typ. Features Low VCE(sat), VCE(sat)=-0.5 V (max), at IC / IB = -4A / -0.1A Excellent DC current gain characteristics Complementary to BTD2118J3 Pb-free lead p
btb1424at3.pdf
Spec. No. : C817T3 Issued Date : 2005.10.20 CYStech Electronics Corp.Revised Date :2014.02.17 Page No. : 1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB1424AT3 Features Low VCE(sat), typically -0.3V at IC / IB = -2A / -0.1A Excellent current gain characteristics Complementary to BTD2150AT3 Pb-free lead plating package Symbol Outline BTB1424AT3 TO-12
btb1424n3.pdf
Spec. No. : C817N3-R Issued Date : 2003.04.03 CYStech Electronics Corp.Revised Date :2013.03.04 Page No. : 1/6 Low V PNP Epitaxial Planar Transistor CE(sat)BVCEO -50VIC -3ABTB1424N3RCESAT(typ.) 0.125 Features Excellent DC current gain characteristics Low Saturation Voltage V =-0.25V(typ)(I =-2A, I =-100mA). CE(sat) C B Complementary to BTD2150N3
btb1424a3.pdf
Spec. No. : C817A3-R Issued Date : 2006.05.30 CYStech Electronics Corp. Revised Date:2008.04.24 Page:1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB1424A3 Features Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.2A Excellent current gain characteristics Complementary to BTD2150A3 Pb-free package Symbol Outline BTB1424A3 TO-92 BBase CCo
btb1424ad3.pdf
Spec. No. : C817D3 Issued Date : 2005.05.16 CYStech Electronics Corp.Revised Date :2011.08.15 Page No. : 1/5 Low V PNP Epitaxial Planar Transistor CE(sat)BTB1424AD3Features Excellent DC current gain characteristics Low Saturation Voltage, V =-0.3V(typ) @I =-2A, I =-100mA. CE(sat) C B Complementary to BTD2150AD3 Pb-free lead plating package Symbol Outl
btb1424am3.pdf
Spec. No. : C817M3 Issued Date : 2007.01.10 CYStech Electronics Corp.Revised Date : 2013.08.12 Page No. : 1/7 Low V PNP Epitaxial Planar Transistor CE(sat)BVCEO -50VIC -3ABTB1424AM3RCESAT(typ) 0.12 Features Excellent DC current gain characteristics Low Saturation Voltage, V =-0.12V(typ) @I =-1A, I =-50mA. CE(sat) C B Complementary to BTD2150AM3 P
btb1426a3.pdf
Spec. No. : C816A3-H Issued Date : 2003.07.02 CYStech Electronics Corp. Revised Date : Page No. : 1/4 Low V PNP Epitaxial Planar Transistor CE(SAT)BTB1426A3Description The BTB1426A3 is designed especially for use in strobo flash and medium power amplifier applications. Features High DC current gain and excellent h linearity. FE Low Saturation Voltage V =-0.5
btb1424l3.pdf
Spec. No. : C817L3 Issued Date : 2003.07.31 CYStech Electronics Corp.Revised Date :2011.02.25 Page No. : 1/6 Low V PNP Epitaxial Planar Transistor CE(sat)BVCEO -50VIC -3ABTB1424L3RCESAT(typ) 0.12 Features Excellent DC current gain characteristics Low Saturation Voltage V (sat)=-0.24V(typ) (I =-2A, I =-100mA). CE C BComplementary to BTD2150L3 P
btb1498n3.pdf
Spec. No. : C900N3 Issued Date : 2009.12.23 CYStech Electronics Corp.Revised Date : Page No. : 1/6 Quadruple High Voltage PNP Epitaxial Planar Transistor Built-in Base Resistor BTB1498N3 Description High breakdown voltage. (BV =-400V) CEO Low saturation voltage, typical V =-0.3V at Ic/I =-20mA/-1mA. CE(sat) B Complementary to BTD2498N3 Pb-free package
btb1424fp.pdf
Spec. No. : C817FP Issued Date : 2011.01.13 CYStech Electronics Corp.Revised Date : 2011.09.14 Page No. : 1/6 Low V PNP Epitaxial Planar Transistor CE(sat)BVCEO -60VIC -3ABTB1424FPRCESAT(typ) 0.12 Features Excellent DC current gain characteristics Low Saturation Voltage, V =-0.12V(typ) @I =-1A, I =-50mA. CE(sat) C B Complementary to BTD2150FP Pb-
btb1427m3.pdf
Spec. No. : C816M3-A Issued Date : 2003.05.26 CYStech Electronics Corp.Revised Date : 2005.11.28 Page No. : 1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB1427M3 Features Low VCE(sat), VCE(sat)=-0.6 V (typical), at IC / IB = -4A / -0.1A Excellent DC current gain characteristics Symbol Outline BTB1427M3 SOT-89 BBase CCollector B C E EEmitter
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050