2N6420 - описание и поиск аналогов

A Boca Semiconductor Corp. http //www.bocasemi.com A http //www.bocasemi.com A http //www.bocasemi.com A http //www.bocasemi.com

JMnic Product Specification Silicon PNP Power Transistors 2N6420 DESCRIPTION With TO-66 package Continuous collector current-IC=-1A Power dissipation -PD=35W @TC=25 Complement to type 2N3583 APPLICATIONS High speed switching and linear amplifier High-voltage operational amplifiers Switching regulators ,converters Deflection stages and high fidelity ampli

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2N6420 DESCRIPTION Contunuous Collector Current-IC= -1A Power Dissipation-PC= 35W @TC= 25 Collector-Emitter Saturation Voltage- VCE(sat)= -5.0 V(Max)@ IC = -1A APPLICATIONS Designed for high-speed switching and linear amplifier appli- cation for high-voltage operational amplifiers, s

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6426/D Darlington Transistors 2N6426* NPN Silicon 2N6427 *Motorola Preferred Device COLLECTOR 3 BASE 2 EMITTER 1 1 2 MAXIMUM RATINGS 3 Rating Symbol Value Unit CASE 29 04, STYLE 1 Collector Emitter Voltage VCEO 40 Vdc TO 92 (TO 226AA) Collector Base Voltage VCBO 40 Vdc Emitter Base Voltage VEBO 12 Vd

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N6427 NPN Darlington transistor 1997 Jul 04 Product specification File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN Darlington transistor 2N6427 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 30 V) 1 collector High DC current gain (min. 10

Discrete POWER & Signal Technologies 2N6426 C TO-92 B E NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V V Collector-Base Vo

2N6427 MMBT6427 C E C TO-92 B B SOT-23 E Mark 1V NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collect

2N6425 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar PNP Device. 1 2 VCEO = 300V IC = 0.25A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS sp

isc Silicon PNP Power Transistor 2N6423 DESCRIPTION Collector-Emitter Breakdown Voltage- V =-300V(Min) CEO Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) UNI SYMBOL PARAMETER VALUE T V Collector-Base Voltage -500 V CBO V Collector-Emitter Voltage

isc Silicon PNP Power Transistor 2N6425 DESCRIPTION Collector-Emitter Breakdown Voltage- V =-300V(Min) CEO Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) UNI SYMBOL PARAMETER VALUE T V Collector-Base Voltage -325 V CBO V Collector-Emitter Voltage

isc Silicon PNP Power Transistor 2N6422 DESCRIPTION Collector-Emitter Breakdown Voltage- V =-300V(Min) CEO Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) UNI SYMBOL PARAMETER VALUE T V Collector-Base Voltage -500 V CBO V Collector-Emitter Voltage