BTC4617C3 - аналоги, параметры транзистора - Справочник транзисторов

BTC4617C3 даташит

..1. Size:276K cystek
btc4617c3.pdf pdf_icon

Spec. No. C204C3 Issued Date 2004.03.02 CYStech Electronics Corp. Revised Date 2011.10.27 Page No. 1/8 General Purpose NPN Epitaxial Planar Transistor BTC4617C3 Description The BTC4617C3 is designed for use in driver stage of AF amplifier and low speed switching. Symbol Outline BTC4617C3 SOT-523 C B Base C Collector E Emitter B E Absolute Maximum Ra

9.1. Size:199K cystek
btc4621k3.pdf pdf_icon

Spec. No. C210K3 Issued Date 2006.12.08 CYStech Electronics Corp. Revised Date Page No. 1/4 High Voltage NPN Epitaxial Planar Transistor BTC4621K3 Features High breakdown voltage. (BV =350V) CEO Low saturation voltage, typically V (sat) =0.1V at I /I 10mA/1mA. CE C B= Pb-free package Symbol BTC4621K3 B Base C Collector E Emitter Absolute

9.2. Size:160K cystek
btc4620d3.pdf pdf_icon

Spec. No. C210D3 Issued Date 2004.09.01 CYStech Electronics Corp. Revised Date 2006.04.21 Page No. 1/4 High Voltage NPN Epitaxial Planar Transistor BTC4620D3 Features High breakdown voltage. (BV =350V) CEO Low saturation voltage, typically V (sat) =0.1V at I /I 10mA/1mA. CE C B= Complementary to BTA1776D3 Pb-free package Symbol Outline BTC4620

9.3. Size:242K cystek
btc4672m3.pdf pdf_icon

Spec. No. C819M3 Issued Date 2005.08.16 CYStech Electronics Corp. Revised Date 2013.08.12 Page No. 1/6 Silicon NPN Epitaxial Planar Transistor BTC4672M3 Features Low saturation voltage, typically V =0.1V at I /I =1A/50mA CE(sat) C B Excellent DC current gain characteristics Complementary to BTA1797M3 Pb-free lead plating and halogen-free package Sy

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