BTD1768M3 - описание и поиск аналогов

Spec. No. C310M3 Issued Date 2007.01.10 CYStech Electronics Corp. Revised Date 2013.08.07 Page No. 1/6 NPN Epitaxial Planar Transistor BTD1768M3 Features High VCEO, VCEO=80V High IC, IC(DC)=1A Low VCE(sat) Good current gain linearity Complementary to BTB1198M3 Pb-free lead plating Symbol Outline BTD1768M3 SOT-89 B Base B C E

Spec. No. C304A3-B Issued Date 2006.08.21 CYStech Electronics Corp. Revised Date 2010.07.02 Page No. 1/6 General Purpose NPN Epitaxial Planar Transistor BTD1768BA3 Description The BTD1768BA3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features Low collector saturation voltage High breakdown voltage, V =80

Spec. No. C304N3 Issued Date 2005.01.10 CYStech Electronics Corp. Revised Date 2010.10.20 Page No. 1/6 General Purpose NPN Epitaxial Planar Transistor BTD1768N3 Description The BTD1768N3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features Low collector saturation voltage High breakdown voltage, V =80V (m

Spec. No. C304A3 Issued Date 2003.07.28 CYStech Electronics Corp. Revised Date 2012.12.27 Page No. 1/6 General Purpose NPN Epitaxial Planar Transistor BTD1768A3 Description The BTD1768A3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features Low collector saturation voltage High breakdown voltage, V =80V (m

Spec. No. C304S3 Issued Date 2009.11.19 CYStech Electronics Corp. Revised Date Page No. 1/6 General Purpose NPN Epitaxial Planar Transistor BVCEO 80V IC 1A BTD1768S3 RCESAT(MAX) 0.5 Description The BTD1768S3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features Low collector saturation voltage High