MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N6426/DDarlington Transistors2N6426*NPN Silicon2N6427*Motorola Preferred DeviceCOLLECTOR 3BASE2EMITTER 112MAXI

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862N6427NPN Darlington transistor1997 Jul 04Product specificationFile under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN Darlington transistor 2N6427FEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 30 V)1 collector High DC current gain (min. 10

Discrete POWER & SignalTechnologies2N6426C TO-92BENPN Darlington TransistorThis device is designed for applications requiring extremelyhigh current gain at currents to 1.0 A. Sourced fromProcess 05. See MPSA14 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VV Collector-Base Vo

2N6427 MMBT6427CEC TO-92BBSOT-23EMark: 1VNPN Darlington TransistorThis device is designed for applications requiring extremelyhigh current gain at collector currents to 1.0 A. Sourced fromProcess 05. See MPSA14 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VVCBO Collect

2N6425Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar PNP Device. 1 2VCEO = 300V IC = 0.25A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS sp

ABoca Semiconductor Corp.http://www.bocasemi.comAhttp://www.bocasemi.comAhttp://www.bocasemi.comAhttp://www.bocasemi.com

JMnic Product Specification Silicon PNP Power Transistors 2N6420 DESCRIPTION With TO-66 package Continuous collector current-IC=-1A Power dissipation -PD=35W @TC=25 Complement to type 2N3583 APPLICATIONS High speed switching and linear amplifier High-voltage operational amplifiers Switching regulators ,converters Deflection stages and high fidelity ampli

isc Silicon PNP Power Transistor 2N6423DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =-300V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage -500 VCBOV Collector-Emitter Voltage

isc Silicon PNP Power Transistor 2N6425DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =-300V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage -325 VCBOV Collector-Emitter Voltage

isc Silicon PNP Power Transistor 2N6422DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =-300V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage -500 VCBOV Collector-Emitter Voltage

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2N6420 DESCRIPTION Contunuous Collector Current-IC= -1A Power Dissipation-PC= 35W @TC= 25 Collector-Emitter Saturation Voltage- : VCE(sat)= -5.0 V(Max)@ IC = -1A APPLICATIONS Designed for high-speed switching and linear amplifier appli- cation for high-voltage operational amplifiers, s