BTN1053L3 - аналоги, параметры транзистора - Справочник транзисторов

BTN1053L3 даташит

..1. Size:152K cystek
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Spec. No. C818L3 Issued Date 2003.08.13 CYStech Electronics Corp. Revised Date Page No. 1/5 NPN Epitaxial Planar Transistor BTN1053L3 Features 5W power dissipation Excellent H Characteristics up to 1A FE Low Saturation Voltage VCE(sat)=0.15V(typ)(IC=1A,IB=50mA). 5A peak pulse current Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Limits

7.1. Size:297K cystek
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Spec. No. C818K3 Issued Date 2013.10.01 CYStech Electronics Corp. Revised Date 2013.12.25 Page No. 1/8 NPN Epitaxial Planar Transistor BVCEO 75V IC 2.5A BTN1053K3 RCESAT(MAX) 250m Features Excellent H Characteristics up to 1A FE Low Saturation Voltage, V =0.15V(typ)@I =1A, I =50mA CE(sat) C B 5A peak pulse current Pb-free lead plating and hal

7.2. Size:302K cystek
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Spec. No. C818I3 Issued Date 2010.01.26 CYStech Electronics Corp. Revised Date 2014.02.26 Page No. 1/7 NPN Epitaxial Planar Transistor BVCEO 80V IC 2.5A BTN1053I3 RCESAT(MAX) 150m Features Excellent H Characteristics up to 1A FE Low Saturation Voltage, V =0.11V(typ)@I =1A, I =50mA CE(sat) C B 5A peak pulse current Pb-free lead plating and hal

7.3. Size:268K cystek
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Spec. No. C818A3 Issued Date 2013.05.22 CYStech Electronics Corp. Revised Date 2013.06.25 Page No. 1/7 Low Vcesat NPN Epitaxial Planar Transistor BTN1053A3 Features Excellent H Characteristics up to 1A FE Low Saturation Voltage, V =0.1V(typ)@I =1A, I =50mA CE(sat) C B 5A peak pulse current Pb-free lead plating and halogen-free package Symbol Outl