Spec. No. : C606J3-A Issued Date : 2005.08.15 CYStech Electronics Corp.Revised Date :2010.12.08 Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 80VIC 8AD44H11J3 RCESAT 60m Features Low VCE(sat) High BVCEO Excellent current gain characteristics RoHS compliant package Symbol Outline D44H11J3 TO-252(DPAK) BBase B C E C

Order this documentMOTOROLAby D44H/DSEMICONDUCTOR TECHNICAL DATANPND44H Series*Complementary Silicon PowerPNPD45H Series*Transistors. . . for general purpose power amplification and switching such as output or driver*Motorola Preferred Devicestages in applications such as switching regulators, converters and power amplifiers. Low CollectorEmitter Saturation V

Order this documentMOTOROLAby MJD44H11/DSEMICONDUCTOR TECHNICAL DATANPN*MJD44H11Complementary PowerPNPMJD45H11 *TransistorsDPAK For Surface Mount Applications*Motorola Preferred Device. . . for general purpose power and switching such as output or driver stages inSILICONapplications such as switching regulators, converters, and power amplifiers.POWER TRANSISTORS

D44H11FPD45H11FPComplementary power transistors .Features Low collector-emitter saturation voltage Fast switching speedApplications Power amplifier 321 Switching circuitsTO-220FPDescriptionThe devices are manufactured in low voltage multi epitaxial planar technology. They are intended for Figure 1. Internal schematic diagramgeneral purpose linear an

MJD44H11T4-AMJD45H11T4-AComplementary power transistors .Features The devices are qualified for automotive applicationTAB2 Low collector-emitter saturation voltage Fast switching speed3 Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") 1DPAKApplicationsTO-252 Power amplifier Switching circuitsFigure 1. Internal sche

D44H8D44H11NPN SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES LOW COLLECTOR-EMITTER SATURATIONVOLTAGE FAST SWITCHING SPEEDAPPLICATIONS GENERAL PURPOSE SWITCHING GENERAL PURPOSE AMPLIFIER32DESCRIPTION1The D44H8, and D44H11 are siliconmultiepitaxial planar NPN transistors mounted inTO-220Jedec TO-220 plastic package.They are inteded for various swit

D44H8 - D44H11D45H8 - D45H11Complementary power transistors .Features Low collector-emitter saturation voltageTAB Fast switching speedApplications Power amplifier32 Switching circuits1TO-220DescriptionThe devices are manufactured in low voltage multi epitaxial planar technology. They are intended for Figure 1. Internal schematic diagramgeneral p

D44H8 - D44H11D45H8 - D45H11Complementary power transistors .Features Low collector-emitter saturation voltageTAB Fast switching speedApplications Power amplifier32 Switching circuits1TO-220DescriptionThe devices are manufactured in low voltage multi epitaxial planar technology. They are intended for Figure 1. Internal schematic diagramgeneral p

MJD44H11T4-AMJD45H11T4-AComplementary power transistors .Features The devices are qualified for automotive applicationTAB2 Low collector-emitter saturation voltage Fast switching speed3 Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") 1DPAKApplicationsTO-252 Power amplifier Switching circuitsFigure 1. Internal sche

MJD44H11, MJD45H11Complementary power transistorsDatasheet - production data .Features Low collector-emitter saturation voltageTAB Fast switching speed 2 Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4")31ApplicationsDPAKTO-252 Power amplifier Switching circuitsDescriptionFigure 1. Internal schematic diagramThese d

March 2009D44H11TUNPN Epitaxial Silicon Transistor Low Collector-Emitter Saturation Voltage : VCE(sat) = 1V (Max.) @ 8A Fast Switching Speeds Complement to KSE45HTO-22011.Base 2.Collector 3.EmitterAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector C

March 2009MJD44H11NPN Epitaxial Silicon Transistor General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications Load Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, "- I" Suffix) Electrically Similar to Popular MJE44H Fast Switching Speeds Low Collector Emitter Saturation V

February 2010D44H8 / NZT44H8 / D44H11NPN Power AmplifierFeatures This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from process 4Q.C ECBB C E TO-220SOT-223 D44H8 / D44H11 NZT44H8Absolute Maximum Ratings* TA=25C unless otherwise notedValueSymbol Parameter UnitsD44H8D44H11NZT44H8VCEO Collec

MJD44H11A80 V, 8 A NPN high power bipolar transistor12 September 2019 Product data sheet1. General descriptionNPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device(SMD) plastic package.PNP complement: MJD45H11A2. Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Ele

MJD44H1180 V, 8 A NPN high power bipolar transistor12 September 2019 Product data sheet1. General descriptionNPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device(SMD) plastic package.PNP complement: MJD45H112. Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Elect

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MJD44H11,NJVMJD44H11 (NPN)MJD45H11,NJVMJD45H11 (PNP)Complementary Powerhttp://onsemi.comTransistorsDPAK For Surface Mount Applications SILICONPOWER TRANSISTORSDesigned for general purpose power and switching such as output or8 AMPERESdriver stages in applications such as switching regulators, converters,80 VOLTS, 20 WATTSand power amplifiers.FeaturesMARKING Le

MJD44H11,NJVMJD44H11 (NPN)MJD45H11,NJVMJD45H11 (PNP)Complementary Powerhttp://onsemi.comTransistorsDPAK For Surface Mount Applications SILICONPOWER TRANSISTORSDesigned for general purpose power and switching such as output or8 AMPERESdriver stages in applications such as switching regulators, converters,80 VOLTS, 20 WATTSand power amplifiers.FeaturesMARKING Le

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Spec. No. : C606FP Issued Date : 2005.03.29 CYStech Electronics Corp.Revised Date : 2011.12.06 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor D44H11FP Features Low VCE(sat) High BVCEO Excellent current gain characteristics Pb-free lead plating package Symbol Outline D44H11FP TO-220FP BBase CCollector EEmitter B C E Absolut

Spec. No. : C606E3-A Issued Date : 2005.01.03 CYStech Electronics Corp.Revised Date :2007.11.01 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor D44H11E3 Features Low VCE(sat) High BVCEO Excellent current gain characteristics RoHS compliant package Symbol Outline D44H11E3 TO-220AB BBase CCollector EEmitter B C E Absolute Max

SPTECH Product SpecificationSPTECH Silicon NPN Power TransistorsD44H11DESCRIPTIONLow Collector-Emitter Saturation Voltage: V )= 1.0V(Max)@ I = 8ACE(sat CFast Switching SpeedsComplement to Type D45H11Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for general purpose power amplification andswitching such as

isc Silicon NPN Power Transistors MJD44H11DESCRIPTIONLow Collector-Emitter Saturation Voltage: V )= 1.0V(Max)@ I = 8ACE(sat CFast Switching SpeedsComplement to Type MJD45H11DPAK for Surface Mount ApplicationsMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for general purpose power amplification andswitchin