Spec. No. : C607J3 Issued Date : 2005.07.11 CYStech Electronics Corp.Revised Date :2010.12.08 Page No. : 1/6 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -80VIC -8AD45H11J3 RCESAT 75m Features Low VCE(sat) High BVCEO Excellent current gain characteristics RoHS compliant package Symbol Outline TO-252(DPAK) D45H11J3BBase B C E C

Order this documentMOTOROLAby D44H/DSEMICONDUCTOR TECHNICAL DATANPND44H Series*Complementary Silicon PowerPNPD45H Series*Transistors. . . for general purpose power amplification and switching such as output or driver*Motorola Preferred Devicestages in applications such as switching regulators, converters and power amplifiers. Low CollectorEmitter Saturation V

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D44H11FPD45H11FPComplementary power transistors .Features Low collector-emitter saturation voltage Fast switching speedApplications Power amplifier 321 Switching circuitsTO-220FPDescriptionThe devices are manufactured in low voltage multi epitaxial planar technology. They are intended for Figure 1. Internal schematic diagramgeneral purpose linear an

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MJD44H11T4-AMJD45H11T4-AComplementary power transistors .Features The devices are qualified for automotive applicationTAB2 Low collector-emitter saturation voltage Fast switching speed3 Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") 1DPAKApplicationsTO-252 Power amplifier Switching circuitsFigure 1. Internal sche

MJD44H11T4-AMJD45H11T4-AComplementary power transistors .Features The devices are qualified for automotive applicationTAB2 Low collector-emitter saturation voltage Fast switching speed3 Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") 1DPAKApplicationsTO-252 Power amplifier Switching circuitsFigure 1. Internal sche

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D44H8 - D44H11D45H8 - D45H11Complementary power transistors .Features Low collector-emitter saturation voltageTAB Fast switching speedApplications Power amplifier32 Switching circuits1TO-220DescriptionThe devices are manufactured in low voltage multi epitaxial planar technology. They are intended for Figure 1. Internal schematic diagramgeneral p

MJD44H11, MJD45H11Complementary power transistorsDatasheet - production data .Features Low collector-emitter saturation voltageTAB Fast switching speed 2 Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4")31ApplicationsDPAKTO-252 Power amplifier Switching circuitsDescriptionFigure 1. Internal schematic diagramThese d

April 2010MJD45H11PNP Epitaxial Silicon TransistorApplications General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount ApplicationsFeatures Load Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK: -I Suffix) Electrically Similar to Popular MJE45HD-PAK I-PAK11 Fast Switching Spe

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MJD44H11 (NPN),MJD45H11 (PNP)Complementary PowerTransistorsDPAK for Surface Mount Applicationshttp://onsemi.comDesigned for general purpose power and switching such as output ordriver stages in applications such as switching regulators, converters,SILICONand power amplifiers.POWER TRANSISTORSFeatures8 AMPERES Lead Formed for Surface Mount Application in Plastic Slee

Spec. No. : C607E3 Issued Date : 2007.03.07 CYStech Electronics Corp.Revised Date : 2014.05.05 Page No. : 1/5 Low Vcesat PNP Epitaxial Planar Transistor D45H11E3 Features Low VCE(sat) High BVCEO Excellent current gain characteristics Pb-free lead plating package Symbol Outline D45H11E3 TO-220 BBase CCollector EEmitter B C E Ordering

Spec. No. : C607FP Issued Date : 2008.04.07 CYStech Electronics Corp.Revised Date : 2013.10.29 Page No. : 1/6 Low Vcesat PNP Epitaxial Planar Transistor D45H11FP Features Low VCE(sat) High BVCEO Excellent current gain characteristics Pb-free lead plating package Symbol Outline D45H11FPTO-220FP TO-220FP (C forming) (S forming) BBase CCollec

isc Silicon PNP Power Transistors MJD45H11DESCRIPTIONLow Collector-Emitter Saturation Voltage: V )= 1.0V(Max)@ I = 8ACE(sat CFast Switching SpeedsComplement to Type MJD44H11DPAK for Surface Mount ApplicationsMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for general pourpose power amplification andswitchi

INCHANGE Semiconductorisc Silicon PNP Power Transistors D45H11DESCRIPTIONLow Collector-Emitter Saturation Voltage: V )= 1.0V(Max)@ I = 8ACE(sat CFast Switching SpeedsComplement to Type D44H11Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for general pourpose power amplification andswitching such as output o