2SC5676 - Даташиты. Аналоги. Основные параметры

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5676 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Low voltage operation, low phase distortion Ideal for OSC applications Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5676 50 pcs (Non reel) 8 mm

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5674 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES Ideal for 3 GHz or higher OSC applications Low noise, high gain fT = 21.0 GHz TYP., S21e 2 = 11.5 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = Zopt 3-pin lead-less minimold package

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5677 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES Low voltage operation, low phase distortion Ideal for OSC applications 3-pin lead-less minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5677 50 pcs (Non reel) 8 mm wide embossed taping 2SC5677-T3 10 kpcs/re

2SC5612 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5612 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Unit mm High Voltage VCBO = 2000 V Low Saturation Voltage V = 3 V (Max.) CE (sat) High Speed t = 0.15 s (Typ.) f MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 2000 V Collector-Emitter Voltage VCEO 90

2SC5692 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5692 Industrial Applications High-Speed Switching Applications Unit mm DC-DC Converter Applications Strobe Applications High DC current gain hFE = 400 to 1000 (I = 0.3 A) C Low collector-emitter saturation voltage V = 0.14 V (max) CE (sat) High-speed switching t = 120 ns (typ.) f Maximum Ratings (

2SC5695 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5695 Horizontal Deflection Output for High Resolution Display, Unit mm Color TV High voltage VCBO = 1500 V Low saturation voltage V = 3 V (max) CE (sat) High speed t (2) = 0.1 s (typ.) f Maximum Ratings (Tc = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO

Ordering number ENN7351 2SC5665 NPN Epitaxial Planar Silicon Transistor 2SC5665 High-Frequency Low-Noise Amplifier and OSC Applications Features Package Dimensions Low-noise use NF=1.5dB typ (f=2GHz). unit mm High cut-off frequency fT=6.5GHz typ (VCE=1V). 2106A fT=11.2GHz typ (VCE=3V). [2SC5665] Low operating voltage. 0.75 0.3 0.6 3 0 0.1 1 2 0.1 0.2 0.

Ordering number ENN6403A 2SC5607 NPN Epitaxial Planar Silicon Transistor 2SC5607 DC / DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit mm 2033A Features [2SC5607] Adoption of MBIT processes. 2.2 4.0 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.

Ordering number ENN6465 NPN Triple Diffused Planar Silicon Transistor 2SC5637 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2174 High reliability (Adoption of HVP process). [2SC5637] Adoption of MBIT process. 3.4 5.6 16.0 3.1 2.8 2.0 2

Ordering number ENN7326 2SC5647 NPN Epitaxial Planar Silicon Transistor 2SC5647 UHF to S Band Low-Noise Amplifier and OSC Applications Features Package Dimensions Low noise NF=2.6dB typ (f=2GHz). unit mm High cutoff frequency fT=9.0GHz typ (VCE=1V). 2106A fT=11.5GHz typ (VCE=3V). [2SC5647] Low operating voltage. 0.75 High gain S21e 2=10.5dB typ (f=2

Ordering number ENN6367 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2022/2SC5610 DC/DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit mm 2041A Features [2SA2022/2SC5610] 4.5 Adoption of MBIT processes. 10.0 2.8 Large current capacitance. 3.2 Low collector-to-emitter saturation voltage. High-

Ordering number ENN6588 2SC5645 NPN Epitaxial Planar Silicon Transistor 2SC5645 UHF to S Band Low-Noise Amplifier and OSC Applications Features Package Dimensions Low noise NF=1.5dB typ (f=2GHz). unit mm High cutoff frequency fT=10GHz typ (VCE=1V). 2106A fT=12.5GHz typ (VCE=3V). [2SC5645] Low-voltage operating . High gain S21e 2=9.5dB typ (f=2GHz). 0

Ordering number ENN6586 2SA2031 / 2SC5669 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA2031 / 2SC5669 230V / 15A, AF100W Output Applications Features Package Dimensions Large current capacitance. unit mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process. [2SA2031 / 2SC5669] 15.6 3.2 4.8 14.0

Ordering number ENN6896A 2SC5690 NPN Triple Diffused Planar Silicon Transistor 2SC5690 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SC5690] Adoption of MBIT process. 5.6 3.4 16.0 On-chip dam

Ordering number ENN6653A 2SC5683 NPN Triple Diffused Planar Silicon Transistor 2SC5683 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SC5683] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2

Ordering number ENN6466 NPN Triple Diffused Planar Silicon Transistor 2SC5638 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2174 High reliability (Adoption of HVP process). [2SC5638] Adoption of MBIT process. 3.4 5.6 16.0 3.1 2.8 2.0 2

Ordering number ENN6654A 2SC5689 NPN Triple Diffused Planar Silicon Transistor 2SC5689 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SC5689] Adoption of MBIT process. 5.6 3.4 On-chip damper di

Ordering number ENA1120 2SC5646A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor UHF to S-Band Low-Noise Amplifier, 2SC5646A OSC Applications Features Low-noise NF=1.5dB typ (f=2GHz). High cut-off frequency fT=10GHz typ (VCE=1V). fT=12.5GHz typ (VCE=3V). Low-voltage operation. High gain S21e 2=9.5dB typ (f=2GHz). Ultrasmall

Ordering number ENN6665A 2SC5699 NPN Triple Diffused Planar Silicon Transistor 2SC5699 CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SC5699] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.1 0.9 0.7 1 2 3 1

Ordering number ENN6606 2SC5646 NPN Epitaxial Planar Silicon Transistor 2SC5646 UHF to S Band Low-Noise Amplifier and OSC Applications Features Package Dimensions Low-noise use NF=1.5dB typ (f=2GHz). unit mm High cut-off frequency fT=10GHz typ (VCE=1V). 2159 fT=12.5GHz typ (VCE=3V). [2SC5646] Low operating voltage. High gain S21e 2=9.5dB typ (f=2GHz).

Ordering number ENN6663B 2SC5696 NPN Triple Diffused Planar Silicon Transistor 2SC5696 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1600V). 2174A High reliability(Adoption of HVP process). [2SC5696] Adoption of MBIT process. 5.6 3.4 16.0 On-chip damper diode. 3.1 2.8 2.

Ordering number ENN6467 NPN Triple Diffused Planar Silicon Transistor 2SC5639 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2174 High reliability (Adoption of HVP process). [2SC5639] Adoption of MBIT process. 3.4 5.6 16.0 3.1 2.8 2.0 2

Ordering number ENN6608A 2SC5682 NPN Triple Diffused Planar Silicon Transistor 2SC5682 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SC5682] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.1

Ordering number ENN6664A 2SC5698 NPN Triple Diffused Planar Silicon Transistor 2SC5698 CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SC5698] Adoption of MBIT process. 5.6 3.4 16.0 On-chip damper diode. 3.1 2.8 2.0

Ordering number ENN6652A 2SC5680 NPN Triple Diffused Planar Silicon Transistor 2SC5680 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SC5680] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2

Ordering number ENN6587 2SA2037 / 2SC5694 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2037 / 2SC5694 DC / DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers and unit mm printer drivers. 2042B 8.0 [2SA2037 / 2SC5694] 4.0 3.3 1.0 1.0 Features Adoption of MBIT process. Large current capacity. 3.0 Low co

Ordering number ENN6607A 2SC5681 NPN Triple Diffused Planar Silicon Transistor 2SC5681 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SC5681] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.1

Ordering number ENN6336 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2023/2SC5611 60V / 5A High-Speed Switching Applications Applications Package Dimensions Various inductance lamp drivers for electrical unit mm equipment. 2165 Inverters, converters (strobes, flash, fluorescent lamp [2SA2023/2SC5611] lighting circuit). 8.0 4.0 Power amplifier (high-power car stereo,

2SC5624 Silicon NPN Epitaxial High Frequency Low Noise Amplifier REJ03G0129-0200Z (Previous ADE-208-978(Z)) Rev.2.00 Oct.21.2003 Features High gain bandwidth product fT = 28 GHz typ. High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.2 dB typ. at f = 1.8 GHz Outline CMPAK-4 2 3 1 4 1. Emitter 2. Collector 3. Emitter 4. Base Note Marking is VH -.

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5618 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz NF = 1.4 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz 3-pin lead-less minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5618 50 pcs (Non reel) 8 mm wide embosse

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5617 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz S21e 2 = 11.0 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz 3-pin lead-less minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5617 50 pcs (Non reel) 8 mm w

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5614 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES NF = 1.4 dB TYP., S21e 2 = 10.0 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz 3-pin lead-less minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5614 50 pcs (Non reel) 8 mm wide embossed taping 2SC5614-T3 10 kpcs

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5655 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN NON-LEAD MINIMOLD FEATURES 1006 package employed (1.0 0.6 0.5 mm) NF = 1.5 dB TYP., S21e 2 = 4.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5655 50 pcs (Non reel) 8 mm wide paper carrier taping 2SC

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5668 NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Ideal for low noise high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP., Ga = 11 dB @ f = 2 GHz, VCE = 2 V, IC = 5 mA Maximum available power gain MAG. = 12.5 dB TYP. @ f

PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE687M23 OUTLINE DIMENSIONS (Units in mm) FEATURES PACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE World's smallest transistor package footprint leads are completely underneath package body 0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance 0.25 1 HIGH GAIN BANDWIDTH PRODUCT fT =

PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M13 OUTLINE DIMENSIONS (Units in mm) FEATURES PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE Small transistor outline +0.1 +0.1 0.5 0.05 0.15 0.05 0.3 1.0 X 0.5 X 0.5 mm Low profile / 0.50 mm package height 1 2 Flat lead style for better RF performance 0.35 HIGH GAIN BANDWIDTH PRODUCT +0.1 +0.1

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5602 NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES High-gain transistor for buffer amplifier S21e 2 = 10.0 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 5 mA fT = 25 GHz UHS0 (Ultra High Speed Process) technology adopted 3-pin ultra super minimold package (t = 0.75 mm) ORDE

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5667 NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES Ideal for low noise high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP., Ga = 11 dB @ f = 2 GHz, VCE = 2 V, IC = 5 mA Maximum available power gain MAG. = 12.5 dB TYP. @ f = 2 GHz, VCE = 2 V,

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5600 NPN SILICON RF TRANSISTOR FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Low voltage operation, low phase distortion Ideal for OSC applications Flat-lead 3-pin thin-type ultra super minimold (t = 0.59 mm) ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5600 50 pcs (Non reel) 8 mm wide embossed taping 2

PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE856M23 OUTLINE DIMENSIONS (Units in mm) FEATURES PACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE World's smallest transistor package footprint leads are completely underneath package body 0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance 0.25 1 LOW NOISE FIGURE NF = 1.4 dB at

PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE685M23 OUTLINE DIMENSIONS (Units in mm) FEATURES PACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE World's smallest transistor package footprint leads are completely underneath package body 0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance 0.25 1 HIGH GAIN BANDWIDTH PRODUCT fT =

PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE681M23 OUTLINE DIMENSIONS (Units in mm) FEATURES PACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE World's smallest transistor package footprint leads are completely underneath package body 0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance 0.25 HIGH GAIN BANDWIDTH PRODUCT 1 fT =

PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE681M13 OUTLINE DIMENSIONS (Units in mm) FEATURES PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE Small transistor outline +0.1 +0.1 0.5 0.05 0.15 0.05 0.3 1.0 X 0.5 X 0.5 mm Low profile / 0.50 mm package height 1 2 Flat lead style for better RF performance 0.35 HIGH GAIN BANDWIDTH PRODUCT +0.1 +0.1

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5615 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES 1005 package employed (1.0 0.5 0.5 mm) NF = 1.4 dB TYP., S21e 2 = 12.0 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5615 50 pcs (Non reel) 8 mm wide embossed taping 2SC561

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5656 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN NON-LEAD MINIMOLD FEATURES 1006 package employed (1.0 0.6 0.5 mm) NF = 1.3 dB TYP., S21e 2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5656 50 pcs (Non reel) 8 mm wide paper carrier taping 2S

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5603 NPN SILICON RF TRANSISTOR FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES High-gain transistor for buffer amplifier S21e 2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz fT = 25 GHz UHS0 (Ultra High Speed Process) technology adopted Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION

PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M23 OUTLINE DIMENSIONS (Units in mm) FEATURES PACKAGE OUTLINE M03 NEW MINIATURE M23 PACKAGE World's smallest transistor package footprint leads are completely underneath package body 0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance HIGH GAIN BANDWIDTH PRODUCT 0.25 1 fT =

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES Suitable for high-frequency oscillation fT = 25 GHz technology adopted 3-pin ultra super minimold ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5606 50 pcs (Non reel) 8 mm wide embossed taping 2SC5606-T1 3

AEC-Q101 Qualified High-frequency Amplifier Transistor (25V, 50mA, 300MHz) 2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K 2SC5659FHA / 2SC4618FRA / 2SC4098FRA / 2SC2413K Features Dimensions (Unit mm) 1) Low collector capacitance. (Cob Typ. 1.3pF) 2SC5659FHA 2SC5659 1.2 2) Low rbb, high gain, and excellent noise characteristics. 0.2 0.8 0.2 (2) (3) (1) (1) Base 0.15Max.

High-frequency Amplifier Transistor (25V, 50mA, 300MHz) 2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K Features Dimensions (Unit mm) 1) Low collector capacitance. (Cob Typ. 1.3pF) 2SC5659 1.2 2) Low rbb, high gain, and excellent noise characteristics. 0.2 0.8 0.2 (2) (3) (1) (1) Base 0.15Max. ROHM VMT3 (2) Emitter Absolute maximum ratings (Ta=25 C) (3) Collector

2SC5662 Datasheet High-frequency Amplifier Transistor (11V, 50mA, 3.2GHz) lOutline l SOT-723 Parameter Value SC-105AA VCEO 11V IC 50mA VMT3 lFeatures lInner circuit l l 1)High transition frequency.(Typ.fT=3.2GHz) 2)Small rbb' Cc and high gain.(Typ.4ps) 3)Small NF. lApplication l HIGH

High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz) 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K Features Dimensions (Unit mm) 1) High transition frequency. (Typ. fT = 1.5GHz) 2SC5661 2) Small rbb Cc and high gain. (Typ. 6ps) 3) Small NF. (1) Base Packaging specifications and hFE ROHM VMT3 (2) Emitter Type 2SC5661 2SC4725 2SC4082 2SC3837K (3) Collector Package

2SC5663 / 2SC5585 Datasheet Low frequency transistor (12V, 500mA) lOutline l Parameter Value SOT-723 SOT-416 VCEO 12V IC 500mA 2SC5663 2SC5585 (VMT3) (EMT3) lFeatures l 1)High current 2)Low VCE(sat). VCE(sat) 250mV at IC=200mA/IB=10mA lApplication l LOW FREQUENCY

2SC5585 / 2SC5663 Transistors Low frequency transistor (12V, 0.5A) 2SC5585 / 2SC5663 The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. External dimensions (Unit mm) Applications For switching 2SC5585 For muting (1) (2) (3) 0.8 Features 1.6 1) High current. 2) Low VCE(sat). 0.1Min. (1) Emitter

General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S Features Dimensions (Unit mm) 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2SC2412K 2SC4081 2SC4617 2. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029 / 2SA933AS. (1) (2) (3) 1.25 1.6 0.8 2.1 2.8 1.6 Structure Epitaxial planar type 0.1Min. 0.1Min. 0.3Min. NPN

AEC-Q101 Qualified General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 2SC2412KFRA / 2SC4081FRA / 2SC4617FRA/ /2SC5658FHA Features Dimensions (Unit mm) 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2SC2412K 2SC4081 2SC2412KFRA 2SC4081FRA 2. Complements the 2SA1037AK / 2SA1576A / 2SA1037AKFRA / 2SA1576AFRA 2SA1774FRA / 2SA2029FHA 2SA1774H / 2SA2029

2SC2412K / 2SC4081 / 2SC4617 / Transistors 2SC5658 / 2SC1740S General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S External dimensions (Units mm) Features 1) Low Cob. 2SC2412K 2SC4081 2SC4617 Cob=2.0pF (Typ.) (1) 2) Complements the 2SA1037AK / (2) (3) 1.25 2SA1576A / 2SA1774H / 1.6 0.8 2.1 2.8 2SA2029 / 2SA933AS. 1.6 0.1Min. 0.1Min.

High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz) 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K Features Dimensions (Unit mm) 1) High transition frequency. (Typ. fT = 1.5GHz) 2SC5661 2) Small rbb Cc and high gain. (Typ. 6ps) 3) Small NF. (1) Base Packaging specifications and hFE ROHM VMT3 (2) Emitter Type 2SC5661 2SC4725 2SC4082 2SC3837K (3) Collector Package

2SC5658 / 2SC4617EB / 2SC4617 2SC4081UB / 2SC4081U3 / 2SC2412K Datasheet General purpose small signal amplifier (50V, 150mA) lOutline l Parameter Value SC-105AA SOT-416FL VCEO 50V IC 150mA 2SC5658 2SC4617EB (VMT3) (EMT3F) lFeatures SOT-416 SOT-323FL l 1)Low Cob.Cob=2.0pF(Typ.) 2)Complements the 2SA2029/ 2SC4617 2SC4081UB 2SA1774EB/2SA

2SC5658 / 2SC4617EB / 2SC4617 2SC4081UB / 2SC4081 / 2SC2412K Datasheet General purpose small signal amplifier (50V, 150mA) lOutline l Parameter Value SC-105AA SOT-416FL VCEO 50V IC 150mA 2SC5658 2SC4617EB (VMT3) (EMT3F) lFeatures SOT-416 SOT-323FL l 1)Low Cob.Cob=2.0pF(Typ.) 2)Complements the 2SA2029/ 2SC4617 2SC4081UB 2SA1774EB/2SA17

High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz) 2SC5662 / 2SC4726 /2SC4083 / 2SC3838K Features Dimensions (Unit mm) 1) High transition frequency. (Typ. fT= 3.2GHz) 2SC5662 1.2 2) Small rbb Cc and high gain. (Typ. 4ps) 0.32 3) Small NF. (3) (1)(2) 0.22 0.13 0.4 0.4 0.5 (1) Base 0.8 (2) Emitter (3) Collector ROHM VMT3 Packaging specifications and

2SC5658M3T5G, 2SC5658RM3T5G NPN Silicon General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is http //onsemi.com designed for low power surface mount applications, where board space is at a premium. NPN GENERAL Features PURPOSE AMPLIFIER Reduces Board Space TRANSISTOR

Ordering number ENA1120A 2SC5646A RF Transistor http //onsemi.com 4V, 30mA, fT=12.5GHz, NPN Single SSFP Features Low-noise NF=1.5dB typ (f=2GHz) High cut-off frequency fT=10GHz typ (VCE=1V) fT=12.5GHz typ (VCE=3V) Low-voltage operation High gain 2 S21e =9.5dB typ (f=2GHz) Ultrasmall, slim flat-lead package (1.4mm 0.8mm 0.6mm) Halogen

2SC5658M3T5G, 2SC5658RM3T5G NPN Silicon General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is http //onsemi.com designed for low power surface mount applications, where board space is at a premium. NPN GENERAL Features PURPOSE AMPLIFIER Reduces Board Space TRANSISTOR

2SC5658M3T5G, 2SC5658RM3T5G NPN Silicon General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is http //onsemi.com designed for low power surface mount applications, where board space is at a premium. NPN GENERAL Features PURPOSE AMPLIFIER Reduces Board Space TRANSISTOR

2SC5658M3T5G, 2SC5658RM3T5G NPN Silicon General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is http //onsemi.com designed for low power surface mount applications, where board space is at a premium. NPN GENERAL Features PURPOSE AMPLIFIER Reduces Board Space TRANSISTOR

Transistors 2SC5654 Silicon NPN epitaxial planer type Unit mm For DC-DC converter 0.15+0.10 0.3+0.1 0.05 0.0 Complementary to 2SA2028 3 Features Low collector to emitter saturation voltage VCE(sat) 1 2 S-mini type package, allowing downsizing and thinning of the (0.65) (0.65) equipment and automatic insertion through the tape packing 1.3 0.1 2.0 0.2 Absolut

Transistors 2SC5609 Silicon PNP epitaxial planer type Unit mm For general amplification 0.33+0.05 0.10+0.05 0.02 0.02 Complementary to 2SA2021 3 Features High foward current transfer ratio hFE 0.23+0.05 1 2 0.02 (0.40) (0.40) SSS-mini type package, allowing downsizing and thinning of the 0.80 0.05 equipment and automatic insertion through the tape packing 1.2

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Transistors 2SC5632 Silicon NPN epitaxial planar type For high-frequency amplification and switching Unit mm 0.15+0.10 0.3+0.1 0.05 0.0 Features 3 High transition frequency fT S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 1 2 (0.65) (0.65) 1.3 0.1 2.0 0.2 Absolute Maximum Ratings Ta = 25 C

Power Transistors 2SC5686 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT monitor Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 5 5 Features High breakdown voltage VCBO 2 000 V High-speed switching tf

Power Transistors 2SC5622 Silicon NPN triple diffusion mesa type Unit mm For horizontal deflection output 15.5 0.5 3.0 0.3 3.2 0.1 5 5 Features High breakdown voltage 1 500 V High-speed switching 5 Wide area of safe operation (ASO) 5 (4.0) 5 2.0 0.2 Absolute Maximum Ratings TC = 25 C 1.1 0.1 0.7 0.1 Parameter Symbol Rating Unit 5.45 0.3

2SC5628 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator ADE-208-979A (Z) 2nd. Edition April 2001 Features Super compact package; (1.4 0.8 0.59mm) High power gain and low noise figure; (PG = 9 dB, NF = 1.1 dB typ, at f = 900 Mhz, VCE = 1 V) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note Marking is XZ- . 2SC5628 Absolute Maximum Rati

2SC5629 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator ADE-208-980 (Z) 1st. Edition Nov. 2000 Features Super compact package; (1.6 0.8 0.7mm) High power gain and low noise figure; (PG = 9 dB typ., NF = 1.1 dB typ., at f = 900MHz, VCE = 1 V) Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector Note Marking is XZ- . 2SC5629 Absolute Maximum Ra

2SC5631 Silicon NPN Epitaxial UHF / VHF Wide Band Amplifier ADE-208-981A (Z) 2nd. Edition Mar. 2001 Features High gain bandwidth product fT = 11 GHz typ. High power gain and low noise figure ; PG = 10 dB typ. , NF = 1.2 dB typ. at f = 900 MHz Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector Note Marking is JR . 2SC5631 Absolute Maximum Rati

2SC5658 0.15A , 60V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-723 FEATURE Low current (max. 150 mA) Low voltage (max. 50 V). CLASSIFICATION OF hFE (1) Product-Rank 2SC2658-Q 2SC2658-R 2SC2658-S Range 120 270 180 390 270 560 Marking BQ BR BS Collector 3 Millimeter M

SMALL-SIGNAL TRANSISTOR 2SC5633 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit 2SC5633 is a super mini package resin sealed 4.6 MAX silicon NPN epitaxial transistor, 1.5 1.6 It is designed for high voltage application. C E B 0.53 FEATURE 0.4 MAX Low collector to emitter saturation voltage. 0.48

mm 1.6 0.4 0.4 0.8 1

mm 2.1 0.425 0.425 1.25 1

2SC5621 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING Unit DESCRIPTION 2SC5621 is a super mini package resin sealed silicon NPN 1.5 epitaxial transistor. 0.35 0.8 0.35 It is designed for high frequency voltage application. FEATURE High gain bandwidth product. fT=4.5GHz High gain, low noise. Can opera

Transistor 2SC5626 For High Frequency Amplify Application Silicon NPN Epitaxial Type (Super Mini type) DESCURIPTION Mitsubishi 2SC5626 is a super mini packege resin sealed OUTLINE DRAWING silicon NPN epitaxial ty pe transistor. It is designed f or high Unit mm f requency amplif y application. 2.1 0.425 0.425 1.25 FEATURE 1.30 Super mini package f or easy mounting

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is al

mm 2.5 0.5 0.5 1.5 1

2SC5619 NPN 2SC5619 NPN 2.5 T 1.5 0.5 0.5

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-723 Plastic-Encapsulate Transistors 2SC5658 General purpose transistors (NPN) SOT-723 FEATURES Low Cob Complements the 2SA2029 1. BASE 2. EMITTER 3. COLLECTOR Marking BQ,BR,BS Absolute maximum ratings (Ta=25 unless otherwise noted) Symbol Parameter Limit Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emit

JMnic Product Specification Silicon NPN Power Transistors 2SC5669 DESCRIPTION With TO-3PN package Complement to type 2SA2031 Wide area of safe operation Large current capacitance APPLICATIONS For audio frequency output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta=

LESHAN RADIO COMPANY, LTD. L2SC5658QM3T5G NPN Silicon General L2SC5658RM3T5G Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier 3 applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board space is at a premium. 2 Features 1 Reduces Board Space SOT 723 High h

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC5635LT1G 1.High gain bandwidth product.(Typ.fT=8.0GHz) S-L2SC5635LT1G 2.High gain,low noise 3.Can operate at low voltage 4.We declare that the material of product compliance with RoHS requirements. 4.S- Prefix for Automotive and Other Applications Requiring Unique Site 3 and Control Change Requirements;

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC5635WT1G 1.High gain bandwidth product.(Typ.fT=8.0GHz) 2.High gain,low noise S-L2SC5635WT1G 3.Can operate at low voltage 4.We declare that the material of product compliance with RoHS requirements. 3 5.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC

LESHAN RADIO COMPANY, LTD. L2SC5658QM3T5G NPN Silicon General L2SC5658RM3T5G Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier 3 applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board space is at a premium. 2 Features 1 Reduces Board Space SOT 723 High h

CHENMKO ENTERPRISE CO.,LTD 2SC5663GP SURFACE MOUNT Low Ferquency NPN Transistor VOLTAGE 12 Volts CURRENT 0.5 Ampere APPLICATION * For switching,for muting. FEATURE SOT-723 * Small surface mounting type. (SOT-723) * High current * Collector saturation voltage is low. VCE(sat)

CHENMKO ENTERPRISE CO.,LTD 2SC5663TGP SURFACE MOUNT Low Ferquency NPN Transistor VOLTAGE 12 Volts CURRENT 0.5 Ampere APPLICATION * For switching,for muting. FEATURE * Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416 * High current * Collector saturation voltage is low. VCE(sat)

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5694 DESCRIPTION High speed switching Large Current Capacity High allowable power dissipation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers,lanp drivers,motor drivers and printer drivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

isc Silicon NPN Power Transistor 2SC5689 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5696 DESCRIPTION High speed switching Built-in damper diode type 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for display horizontal deflection output Switching regulator and general purpose ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5669 DESCRIPTION With TO-3PN package Complement to type 2SA2031 Wide area of safe operation Large current capacitance APPLICATIONS For audio frequency output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute ma

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5622 DESCRIPTION High Breakdown Voltage High Switching Speed Low Saturation Voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Character display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 )