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TPC8050-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8050-H Switching Regulator Applications Motor Drive Applications Unit: mmDC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 9.2 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 9.3 m (typ.)

UTC 8050S NPN EPITAXIAL SILICON TRANSISTORLOW VOLTAGE HIGH CURRENTSMALL SIGNAL NPNTRANSISTORDESCRIPTIONThe UTC8050S is a low voltage high current small signalNPN transistor, designed for Class B push-pull audioamplifier and general purpose applications. FEATURES*Collector current up to 800mA*Collector-Emitter voltage up to 20 VTO-92*Complementary to UTC 8550S 1:EMITTER

SEMICONDUCTOR KTC8050ATECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. B CFEATUREComplementary to KTC8550A.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXMAXIMUM RATING (Ta=25) GC 3.70 MAXDD 0.45CHARACTERISTIC SYMBOL RATING UNITE 1.00F 1.27VCBOCollector-Base Voltage 35 VG 0.85H 0.45VCEOCollector-Emitter Voltage 30 V_HJ 14.0

SEMICONDUCTOR KTC8050STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. FEATUREEL B LComplementary to KTC8550S.DIM MILLIMETERS_A 2.93 0.20+B 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.20MAXIMUM RATING (Ta=25 )1G 1.90H 0.95CHARACTERISTIC SYMBOL RATING UNITJ 0.13+0.10/-0.05K 0.00 ~ 0.10VCBOCollector-Base Voltag

STC8050NSemiconductor Semiconductor NPN Silicon TransistorDescriptions High current application Radio in class B push-pull operation Feature Complementary pair with STA8550N Ordering Information Type NO. Marking Package Code STC8050N STC8050 TO-92N Outline Dimensions unit : mm 4.20~4.402.25 Max.0.52 Max.0.90 Max.1.27 Typ.0.40 Max.1 2 33.55

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HC8050S APPLICATIONS Audio Frequency Amplifier. ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150 TO-92 TjJuncttion Temperature150PCCollector Dissipation

Shantou Huashan Electronic Devices Co.,Ltd. HC8050 NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER PORTABLE RADIO IN CLASS B PUSH-PULL OPERATION. ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150 TO-92 TjJuncttion Temperature150PCCollector Dissipation

SEMICONDUCTOR FTC8050HTECHNICAL DATA General Purpose Transistors NPN Silicon FEATURE 3 High current capacity in compact package. I C =1.5A. 1 Epitaxial planar type. 2 PNP complement: FTA8550HPb-Free Package is available. SOT23 COLLECTOR DEVICE MARKING AND ORDERING INFORMATION 3 Shipping Device Marking 1 FTC8050H 1FC 3000/Tape&Reel BASE 2 E

SEMICONDUCTORFTC8050TECHNICAL DATA TRANSISTOR (NPN) FTC8050B C FEATURES Complimentary to FTA8550 Collector current: IC=0.5ADIM MILLIMETERSA 4.70 MAXEB 4.80 MAXGMAXIMUM RATINGS (Ta=25 unless otherwise noted) C 3.70 MAXDD 0.55 MAXSymbol Parameter Value Unit E 1.00F 1.27G 0.85VCBO Collector-Base Voltage 40 V H 0.45_HJ 14.00 0.50+VCEO Col

DC COMPONENTS CO., LTD.DC8050DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for use in 2W output amplifier of portableradios in class B push-pull operation.TO-92Pinning.190(4.83)1 = Emitter.170(4.33)2 = Base2oTyp3 = Collector.190(4.83).170(4.33)2oTypAbsolute Maximum Ratings(TA=25oC).500Characterist