Биполярный транзистор 2SC3330M - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC3330M
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.2 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 200 MHz
Ёмкость коллекторного перехода (Cc): 3 pf
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: SOT23
2SC3330M Datasheet (PDF)
2sc3330m.pdf
2SC3330M(BR3DG3330M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features Large current capacity and wide ASO. / Applications Capable of being used in the low frequency to hi
2sc3333.pdf
2SC3333 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3333 High Voltage Switching Applications Unit: mm Color TV Chroma Output Applications High voltage: VCEO = 250 V Low C : 1.8 pF (max) re Complementary to 2SA1320 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 250 VCollector-emitt
2sc3331.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
2sc3332.pdf
Ordering number:ENN1334DPNP/NPN Epitaxial Planar Silicon Transistors2SA1319/2SC3332High-Voltage Switching ApplicationsFeatures Package Dimensions Hgih breakdown voltage.unit:mm Excellent hFE linearity.2003B Wide ASO and highly resistant to breakdown.[2SA1319/2SC3332] Adoption of MBIT process.5.04.04.0Switching Test CircuitIB1PW=20sOUTPUTD.C.
2sc3336.pdf
2SC3336Silicon NPN Triple DiffusedApplicationHigh voltage, high speed and high power switchingOutlineTO-3P1. Base2. Collector(Flange)3. Emitter1232SC3336Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 500 VCollector to emitter voltage VCEO 400 VEmitter to base voltage VEBO 10 VCollector current IC 15 ACollector
2sc3338.pdf
2SC3338Silicon NPN EpitaxialApplicationUHF / VHF wide band amplifierOutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SC3338Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 20 VCollector to emitter voltage VCEO 12 VEmitter to base voltage VEBO 3VCollector current IC 50 mACollector power dissipa
2sc3338.pdf
SMD Type TransistorsNPN Transistors2SC3338SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=12V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage VE
2sc3336.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3336DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed and high powerswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050