ST13002T - описание и поиск аналогов

 ..1. Size:644K  semtech
 st13002t st13003t.pdf 

ST 13002T / 13003T NPN Silicon Power Transistors E C B TO-126 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Emitter Voltage 13002T 300 VCEO(sus) V 13003T 400 Collector Emitter Voltage 13002T 600 VCEV V 13003T 700 Emitter Base Voltage VEBO 9 V Collector Current IC 1.5 A Peak Collector Current at t = 5 ms ICM 3 A Base C

 8.1. Size:141K  st
 st13003d-k.pdf 

ST13003D-K High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Integrated antiparallel collector-emitter diode 1 2 3 Applications SOT-32 Electronic ballast for fluorescent lighting Description Figure 1. Internal schemati

 8.2. Size:214K  st
 st13007d.pdf 

ST13007D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR IMPROVED SPECIFICATION - LOWER LEAKAGE CURRENT - TIGHTER GAIN RANGE - DC CURRENT GAIN PRESELECTION - TIGHTER STORAGE TIME RANGE HIGH VOLTAGE CAPABILITY INTEGRATED FREE-WHEELING DIODE LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR 3 2 RELIABLE OPERATION 1 VERY HIGH SWITCHING SPEED FULLY CHARACT

 8.3. Size:80K  st
 st13003.pdf 

ST13003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING 1 2 SWITCH MODE POWER SUPPLIES 3 DESCRIPTION SOT-32 The device is manufactured using high voltage Multi Epitaxial Planar te

 8.4. Size:218K  st
 st13003-k.pdf 

ST13003-K High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Very high switching speed Applications 1 2 Electronic ballast for fluorescent lighting (CFL) 3 SMPS for battery charger SOT-32 Description The device is manufactured using high voltage Figure 1. Internal schematic diagram multi-epitaxi

 8.5. Size:160K  st
 st13007dfp.pdf 

ST13007DFP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR IMPROVED SPECIFICATION - LOWER LEAKAGE CURRENT - TIGHTER GAIN RANGE - DC CURRENT GAIN PRESELECTION - TIGHTER STORAGE TIME RANGE HIGH VOLTAGE CAPABILITY INTEGRATED FREE-WHEELING DIODE LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR 3 2 RELIABLE OPERATION 1 VERY HIGH SWITCHING SPEED FULLY CHARA

 8.6. Size:283K  st
 st13005n.pdf 

ST13005N HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR MEDIUM VOLTAGE CAPABILITY NPN TRANSISTOR LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS COMPACT FLUORESCENT LAMP (CFL) 3 2 ELECTRONIC BALLASTS FOR 1 FLUORESCENT LIGHTING SWITCH MODE POWER SUPPLIES TO-220 DESCRIPTION The device is

 8.7. Size:68K  st
 st13007-.pdf 

ST13007FP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR HIGH VOLTAGE CAPABILITY NPN TRANSISTOR LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED o FULLY CHARACTERIZED AT 125 C LARGE RBSOA 3 2 APPLICATIONS 1 ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING TO-220FP SWITCH MODE POWER SUPPLIES DESCRIPTION

 8.8. Size:252K  st
 st13007.pdf 

ST13007 High voltage fast-switching NPN power transistor Features DC current gain classification TAB High voltage capability Low spread of dynamic parameters Very high switching speed Applications 3 2 1 Electronic ballast for fluorescent lighting TO-220 Switch mode power supplies Description Figure 1. Internal schematic diagram The device is manufactured

 8.9. Size:163K  st
 st13003dn.pdf 

ST13003DN High voltage fast-switching NPN power transistor Preliminary data Features High voltage capability Low spread of dynamic parameters Very high switching speed Integrated free-wheeling diode 3 Application 2 1 Compact fluorescent lamps (CFLs) SOT-32 Description The device is manufactured using high voltage multi epitaxial planar technology for high swi

 8.10. Size:203K  st
 st13003n.pdf 

ST13003N High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Very high switching speed Application 3 2 Compact fluorescent lamps (CFLs) 1 SOT-32 Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a

 8.11. Size:175K  st
 st13009.pdf 

ST13009 High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed 3 Applications 2 1 Switch mode power supplies TO-220 Description The device is manufactured using high voltage multi-epitaxial planar technology for high Figure

 8.12. Size:241K  st
 st13003 st13003-k.pdf 

ST13003, ST13003-K High voltage fast-switching NPN power transistor Datasheet - production data Features High voltage capability Low spread of dynamic parameters Very high switching speed Applications 3 2 Electronic ballast for fluorescent lighting (CFL) 1 SMPS for battery charger SOT-32 Description Figure 1. Internal schematic diagram The device is manufact

 8.13. Size:236K  st
 st13005.pdf 

ST13005 High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications 3 2 1 Electronic ballast for fluorescent lighting Switch mode power supplies TO-220 Description The device is manufactured using high voltage multi-epitaxial planar technology

 8.14. Size:160K  semtech
 st13003.pdf 

ST 13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. The transistor is subdivided into one group according to its DC current gain. TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 600 V Collector Emitter Voltage VCEO 400 V Emitter Base Voltage VEBO 9 V Co

 8.15. Size:615K  semtech
 st13003h.pdf 

ST 13003H NPN Silicon Epitaxial Planar Transistor for high voltage and high speed switching applications 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Emitter Voltage VCES 900 V Collector Emitter Voltage VCEO 500 V Emitter Base Voltage VEBO 9 V Collector Current (f 100 Hz, Duty cycle 50 %)

 8.16. Size:380K  semtech
 st13007.pdf 

ST 13007 NPN Silicon Transistor for high voltage, high-speed power switching application TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 400 V Emitter Base Voltage VEBO 9 V Collector Current IC 8 A O Total Power Dissipation (Ta = 25 C) Ptot 2 W O Total Power Dissipation (

 8.17. Size:633K  semtech
 st13005.pdf 

ST 13005 NPN Silicon Power Transistors for high-voltage, high-speed power switching applications. TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 700 V Collector Base Voltage VCBO 400 V Collector Emitter Voltage VCEO Emitter Base Voltage VEBO 9 V Collector Current IC 4 A O Power Dissipation (Ta = 25 C) Ptot 2 W O Power Dissipati