ST2SD882T - параметры, поиск аналогов, даташиты транзистора

ST2SD882T Datasheet (PDF)

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ST 2SD882T NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. ECBTO-126 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Symbol Value UnitParameterCollector to Base Voltage VCBO 40 VCollector to Emitter Voltage VCEO 30 VEmitter to Base Voltage VEBO 5 VCollector Current IC 3 ACollector C

6.1. Size:535K semtech
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ST 2SD882U NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector to Base Voltage VCBO 40 VCollector to Emitter Voltage VCEO 30 VEmitter to Base Voltage VEBO 5 VCollector Current IC 3 APeak Collector Current (t = 350 s) ICP 7 AT

6.2. Size:297K semtech
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ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in medium power linear and switching applications TO-126 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit120 VCollector Base Voltage VCBO 100 VCollector Emitter Voltage VCES 100 VCollector Emitter Voltage VCEO Emitter Base Voltage VEBO 6 VCollector

6.3. Size:439K semtech
st2sd882ht.pdf pdf_icon

ST 2SD882HT NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. ECBTO-126 Plastic Package Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 30 VEmitter Base Voltage VEBO 5 VCollector Current IC 3 ACollector C

Другие транзисторы... ST2SD1691T , ST2SD1760U , ST2SD1766U , ST2SD2150U , ST2SD2391U , ST2SD526 , ST2SD874U , ST2SD882HT , 2SC828 , ST2SD882U , ST2SD882U-P , ST8050 , STBD135T , STBD136T , STBD137T , STBD138T , STBD139T .