Биполярный транзистор 2N6473
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2N6473
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 40
W
Макcимально допустимое напряжение коллектор-база (Ucb): 110
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 7
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 4
MHz
Ёмкость коллекторного перехода (Cc): 250
pf
Статический коэффициент передачи тока (hfe): 15
Корпус транзистора:
TO220
Аналоги (замена) для 2N6473
2N6473
Datasheet (PDF)
..3. Size:60K inchange semiconductor
2n6473 2n6474.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6473 2N6474 DESCRIPTION With TO-220 package Low collector saturation voltage Excellent safe operating area APPLICATIONS General-purpose medium power for switching and amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute ma
9.3. Size:154K jmnic
2n6477 2n6478.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2N6477 2N6478 DESCRIPTION With TO-220 package Low collector saturation voltage High voltage ratings Excellent safe operating area APPLICATIONS Series and shunt regulators High-fidelity amplifiers Power switching circuits Solenoid drivers PINNING PIN DESCRIPTION1 Base Collector;connected to
9.4. Size:130K inchange semiconductor
2n6470 2n6471 2n6472.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6470 2N6471 2N6472 DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area High gain at high current APPLICATIONS General-purpose types of switching and linear-amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outlin
9.5. Size:59K inchange semiconductor
2n6475 2n6476.pdf 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6475 2N6476 DESCRIPTION With TO-220 package Low collector saturation voltage Excellent safe operating area APPLICATIONS General-purpose medium power for switching and amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified out
9.6. Size:51K inchange semiconductor
2n6470.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6470 DESCRIPTION Excellent Safe Operating Area High DC Current Gain- : hFE= 20-150(Min)@IC = 5A Low Saturation Voltage- : VCE(sat)= 1.3V(Max)@ IC = 5A APPLICATIONS Designed for general-purpose switching and linear amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL
9.7. Size:120K inchange semiconductor
2n6477 2n6478.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6477 2N6478 DESCRIPTION With TO-220 package Low collector saturation voltage High voltage ratings Excellent safe operating area APPLICATIONS Series and shunt regulators High-fidelity amplifiers Power switching circuits Solenoid drivers PINNING PIN DESCRIPTION1 Base Collecto
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