Справочник транзисторов. L2SA1774QT1G

 

Биполярный транзистор L2SA1774QT1G - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: L2SA1774QT1G
   Маркировка: FQ
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.15 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 0.15 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 140 MHz
   Ёмкость коллекторного перехода (Cc): 4 pf
   Статический коэффициент передачи тока (hfe): 120
   Корпус транзистора: SC89

 Аналоги (замена) для L2SA1774QT1G

 

 

L2SA1774QT1G Datasheet (PDF)

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l2sa1774qt1g.pdf

L2SA1774QT1G
L2SA1774QT1G

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l2sa1774st1g.pdf

L2SA1774QT1G
L2SA1774QT1G

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l2sa1774rt1g.pdf

L2SA1774QT1G
L2SA1774QT1G

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l2sa1036kplt1g.pdf

L2SA1774QT1G
L2SA1774QT1G

LESHAN RADIO COMPANY, LTD.Medium Power Transistor(*32V, *0.5A)L2SA1036KQLT1G SeriesL2SA1036KQLT1G SeriesS-L2SA1036KQLT1G SeriesFFeatures1) Large IC.ICMax. = *500mA2) Low VCE(sat). Ideal for low-voltage3operation.3) We declare that the material of product compliance with RoHS requirements.14)S- Prefix for Automotive and Other Applications Requiring Unique Site2a

 9.2. Size:141K  lrc
l2sa1576aqt1g.pdf

L2SA1774QT1G
L2SA1774QT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon We declare that the material of product compliance with RoHS requirements.L2SA1576AQT1G Series S- Prefix for Automotive and Other Applications Requiring Unique SiteS-L2SA1576AQT1G Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.ORDERING INFORMATION3ShippingDevice PackageL2SA1576A

 9.3. Size:141K  lrc
l2sa1576aqt1g l2sa1576art1g l2sa1576ast1g.pdf

L2SA1774QT1G
L2SA1774QT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon We declare that the material of product compliance with RoHS requirements.L2SA1576AQT1G Series S- Prefix for Automotive and Other Applications Requiring Unique SiteS-L2SA1576AQT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.ORDERING INFORMATION3ShippingDevice PackageL2SA157

 9.4. Size:167K  lrc
l2sa1036kqlt1g l2sa1036krlt1g.pdf

L2SA1774QT1G
L2SA1774QT1G

LESHAN RADIO COMPANY, LTD.Medium Power Transistor(*32V, *0.5A)L2SA1036KQLT1G SeriesL2SA1036KQLT1G SeriesS-L2SA1036KQLT1G SeriesFFeatures1) Large IC.ICMax. = *500mA2) Low VCE(sat). Ideal for low-voltage3operation.3) We declare that the material of product compliance with RoHS requirements.14)S- Prefix for Automotive and Other Applications Requiring Unique Site2a

 9.5. Size:143K  lrc
l2sa1037akslt1g.pdf

L2SA1774QT1G
L2SA1774QT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFeatures We declare that the material of product compliance with RoHS requirements.L2SA1037AKQLT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SA1037AKQLT1G Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3ORDERING INFORMATIONShippingDevice Pac

 9.6. Size:192K  lrc
l2sa1577qt1g.pdf

L2SA1774QT1G
L2SA1774QT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconF We declare that the material of product compliance with RoHS requirements.L2SA1577QT1G SeriesFS- Prefix for Automotive and Other Applications Requiring Unique SiteS-L2SA1577QT1G Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.F ORDERING INFORMATION3ShippingDevice PackageL2SA1577Q

 9.7. Size:142K  lrc
l2sa1037akqlt1g l2sa1037akslt1g l2sa1037akrlt1g.pdf

L2SA1774QT1G
L2SA1774QT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFeaturesL2SA1037AKQLT1G Series We declare that the material of product compliance with RoHS requirements.S-L2SA1037AKQLT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3ORDERING INFORMATIONShippingDevice Pack

 9.8. Size:167K  lrc
l2sa1036krlt1g.pdf

L2SA1774QT1G
L2SA1774QT1G

LESHAN RADIO COMPANY, LTD.Medium Power Transistor(*32V, *0.5A)L2SA1036KQLT1G SeriesL2SA1036KQLT1G SeriesS-L2SA1036KQLT1G SeriesFFeatures1) Large IC.ICMax. = *500mA2) Low VCE(sat). Ideal for low-voltage3operation.3) We declare that the material of product compliance with RoHS requirements.14)S- Prefix for Automotive and Other Applications Requiring Unique Site2a

 9.9. Size:141K  lrc
l2sa1576art1g.pdf

L2SA1774QT1G
L2SA1774QT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon We declare that the material of product compliance with RoHS requirements.L2SA1576AQT1G Series S- Prefix for Automotive and Other Applications Requiring Unique SiteS-L2SA1576AQT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.ORDERING INFORMATION3ShippingDevice PackageL2SA157

 9.10. Size:192K  lrc
l2sa1577pt1g.pdf

L2SA1774QT1G
L2SA1774QT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconF We declare that the material of product compliance with RoHS requirements. L2SA1577QT1G SeriesF S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SA1577QT1G Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.F ORDERING INFORMATION3ShippingDevice PackageL2SA1577

 9.11. Size:142K  lrc
l2sa1037akqlt1g.pdf

L2SA1774QT1G
L2SA1774QT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFeaturesL2SA1037AKQLT1G Series We declare that the material of product compliance with RoHS requirements.S-L2SA1037AKQLT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3ORDERING INFORMATIONShippingDevice Pack

 9.12. Size:967K  lrc
l2sa1235flt1g.pdf

L2SA1774QT1G
L2SA1774QT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorDESCRIPTION L2SA1365FLT1G is a mini package silicon PNP epitaxial transistor, L2SA1235FLT1Git is designed for low frequency voltage application.S-L2SA1235FLT1G . FEATURE Small collector to emitter saturation voltage. VCE(sat)=-0.3V max ( @I c=-100mA, I B=-10mA)3Excellent linearity of DC forward current gain.

 9.13. Size:134K  lrc
l2sa1576ast1g.pdf

L2SA1774QT1G
L2SA1774QT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon We declare that the material of product compliance with RoHS requirements.L2SA1576AQT1G Series S- Prefix for Automotive and Other Applications Requiring Unique SiteS-L2SA1576AQT1G Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.ORDERING INFORMATION3ShippingDevice PackageL2SA1576

 9.14. Size:142K  lrc
l2sa1037akqlt1g l2sa1037akqlt3g.pdf

L2SA1774QT1G
L2SA1774QT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFeaturesL2SA1037AKQLT1G Series We declare that the material of product compliance with RoHS requirements.S-L2SA1037AKQLT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3ORDERING INFORMATIONShippingDevice Pack

 9.15. Size:192K  lrc
l2sa1577rt1g.pdf

L2SA1774QT1G
L2SA1774QT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconL2SA1577QT1G SeriesF We declare that the material of product compliance with RoHS requirements.S-L2SA1577QT1G SeriesFS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.F ORDERING INFORMATION3ShippingDevice PackageL2SA1577Q

 9.16. Size:142K  lrc
l2sa1037akrlt1g.pdf

L2SA1774QT1G
L2SA1774QT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFeaturesL2SA1037AKQLT1G Series We declare that the material of product compliance with RoHS requirements.S-L2SA1037AKQLT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3ORDERING INFORMATIONShippingDevice Pack

 9.17. Size:1081K  lrc
l2sa1365flt1g.pdf

L2SA1774QT1G
L2SA1774QT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorDESCRIPTION L2SA1365*LT1G is a mini packagesilicon PNP epitaxial transistor, L2SA1365*LT1Gdesigned with high collector current and small VCE(sat). . S-L2SA1365*LT1GFEATURE Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ 3Excellent linearity of DC forward current gain. Super mini package

 9.18. Size:165K  lrc
l2sa1036kqlt1g.pdf

L2SA1774QT1G
L2SA1774QT1G

LESHAN RADIO COMPANY, LTD.Medium Power Transistor(*32V, *0.5A)L2SA1036KQLT1G SeriesL2SA1036KQLT1G SeriesS-L2SA1036KQLT1G SeriesFFeatures1) Large IC.ICMax. = *500mA2) Low VCE(sat). Ideal for low-voltage3operation.3) We declare that the material of product compliance with RoHS requirements.14)S- Prefix for Automotive and Other Applications Requiring Unique Site2a

Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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