L2SC4083NWT1G - аналоги и даташиты биполярного транзистора

 

L2SC4083NWT1G - Даташиты. Аналоги. Основные параметры


   Наименование производителя: L2SC4083NWT1G
   Маркировка: 4N
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.15 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 11 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
   Макcимальный постоянный ток коллектора (Ic): 0.05 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 3200 MHz
   Ёмкость коллекторного перехода (Cc): 0.8 pf
   Статический коэффициент передачи тока (hfe): 56
   Корпус транзистора: SC70

 Аналоги (замена) для L2SC4083NWT1G

 

L2SC4083NWT1G Datasheet (PDF)

 ..1. Size:174K  lrc
 l2sc4083nwt1g.pdf pdf_icon

L2SC4083NWT1G

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC4083NWT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SC4083NWT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 1 Ordering Information 2 Device Marking Shipping L2SC4083NWT1G

 6.1. Size:513K  lrc
 l2sc4083pt1g.pdf pdf_icon

L2SC4083NWT1G

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier L2SC4083NT1G Transistor Series We declare that the material of product compliance with RoHS requirements. S-L2SC4083NT1G S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Ordering Information Device Marking Shipping L2SC4083NT1G 3000

 6.2. Size:170K  lrc
 l2sc4083pwt1g l2sc4083pwt1g.pdf pdf_icon

L2SC4083NWT1G

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC4083PWT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SC4083PWT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 1 Ordering Information 2 Device Marking Shipping L2SC4083PWT1G

 6.3. Size:180K  lrc
 l2sc4083qwt1g.pdf pdf_icon

L2SC4083NWT1G

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC4083QWT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SC4083QWT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 1 Ordering Information 2 Device Marking Shipping L2SC4083QWT1G

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы... L2SC3356LT1G , L2SC3356WT1G , L2SC3837LT1G , L2SC3838LT1G , L2SC3838NLT1G , L2SC4081QT1G , L2SC4081RT1G , L2SC4081ST1G , D880 , L2SC4083PT1G , L2SC4083PWT1G , L2SC4083QWT1G , L2SC4617QT1G , L2SC4617RT1G , L2SC4617ST1G , L2SC5635WT1G , L2SC5658QM3T5G .

History: 2SC3877 | 2SC3770 | RN2102MFV

 

 
Back to Top

 


 
.