L2SC4617ST1G. Аналоги и основные параметры
Наименование производителя: L2SC4617ST1G
Маркировка: BS
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 0.15 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 180 MHz
Ёмкость коллекторного перехода (Cc): 2 pf
Статический коэффициент передачи тока (hFE): 270
Корпус транзистора: SC89
Аналоги (замена) для L2SC4617ST1G
- подборⓘ биполярного транзистора по параметрам
L2SC4617ST1G даташит
..1. Size:1098K lrc
l2sc4617qt1g l2sc4617qt3g l2sc4617rt1g l2sc4617rt3g l2sc4617st1g l2sc4617st3g.pdf 
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site L2SC4617QT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Ordering information S-L2SC4617QT1G Series Device Marking Shipping L2SC4617QT1G BQ
..2. Size:1098K lrc
l2sc4617qt1g l2sc4617rt1g l2sc4617st1g.pdf 
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site L2SC4617QT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Ordering information S-L2SC4617QT1G Series Device Marking Shipping L2SC4617QT1G BQ
..3. Size:157K lrc
l2sc4617st1g.pdf 
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC4617QT1G We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L2SC4617QT1G ORDERING INFORMATION Series Device Marking Shipping L2SC4617QT1G B
6.1. Size:157K lrc
l2sc4617rt1g.pdf 
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon We declare that the material of product compliance with RoHS requirements. L2SC4617QT1G S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L2SC4617QT1G ORDERING INFORMATION Series Device Marking Shipping L2SC4617QT1G
6.2. Size:1098K lrc
l2sc4617qt1g.pdf 
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site L2SC4617QT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Ordering information S-L2SC4617QT1G Series Device Marking Shipping L2SC4617QT1G BQ
9.1. Size:185K lrc
l2sc4081qt1g l2sc4081rt1g l2sc4081st1g.pdf 
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC4081QT1G Series FEATURE Low Cob,Cob=2pF(Typ.). S-L2SC4081QT1G Series Epitaxial planar type. PNP complement L2SA1576A We declare that the material of product compliance with RoHS requirements. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
9.2. Size:513K lrc
l2sc4083pt1g.pdf 
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier L2SC4083NT1G Transistor Series We declare that the material of product compliance with RoHS requirements. S-L2SC4083NT1G S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Ordering Information Device Marking Shipping L2SC4083NT1G 3000
9.3. Size:174K lrc
l2sc4083nwt1g.pdf 
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC4083NWT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SC4083NWT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 1 Ordering Information 2 Device Marking Shipping L2SC4083NWT1G
9.4. Size:188K lrc
l2sc4081qt1g.pdf 
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC4081QT1G Series FEATURE Low Cob,Cob=2pF(Typ.). S-L2SC4081QT1G Series Epitaxial planar type. PNP complement L2SA1576A 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
9.5. Size:185K lrc
l2sc4081qt1g l2sc4081qt3g l2sc4081rt1g l2sc4081rt3g l2sc4081st1g l2sc4081st3g.pdf 
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC4081QT1G Series FEATURE Low Cob,Cob=2pF(Typ.). S-L2SC4081QT1G Series Epitaxial planar type. PNP complement L2SA1576A We declare that the material of product compliance with RoHS requirements. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
9.6. Size:170K lrc
l2sc4083pwt1g l2sc4083pwt1g.pdf 
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC4083PWT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SC4083PWT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 1 Ordering Information 2 Device Marking Shipping L2SC4083PWT1G
9.7. Size:185K lrc
l2sc4081st1g.pdf 
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC4081QT1G Series FEATURE Low Cob,Cob=2pF(Typ.). S-L2SC4081QT1G Series Epitaxial planar type. PNP complement L2SA1576A 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
9.8. Size:180K lrc
l2sc4083qwt1g.pdf 
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC4083QWT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SC4083QWT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 1 Ordering Information 2 Device Marking Shipping L2SC4083QWT1G
9.9. Size:191K lrc
l2sc4226t1g.pdf 
LESHAN RADIO COMPANY, LTD. L2SC4226T1G S-L2SC4226T1G 3 1 2 SC-70/SOT-323 DESCRIPTION The L2SC4226T1G is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied small mini mold package. We declare that the material of product compliance with RoHS requirements. S- Prefix
9.10. Size:185K lrc
l2sc4081rt1g.pdf 
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC4081QT1G Series FEATURE Low Cob,Cob=2pF(Typ.). S-L2SC4081QT1G Series Epitaxial planar type. PNP complement L2SA1576A We declare that the material of product compliance with RoHS requirements. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
9.11. Size:170K lrc
l2sc4083pwt1g.pdf 
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC4083PWT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SC4083PWT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 1 Ordering Information 2 Device Marking Shipping L2SC4083PWT1G
Другие транзисторы: L2SC4081RT1G, L2SC4081ST1G, L2SC4083NWT1G, L2SC4083PT1G, L2SC4083PWT1G, L2SC4083QWT1G, L2SC4617QT1G, L2SC4617RT1G, NJW0281G, L2SC5635WT1G, L2SC5658QM3T5G, L2SC5658RM3T5G, L2SD1781KRLT1G, L2SD2114KVLT1G, L2SD2114KWLT1G, L2SD882P, L2SD882Q
