L8050HPLT1G - Даташиты. Аналоги. Основные параметры
Наименование производителя: L8050HPLT1G
Маркировка: 1HA
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.225 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1.5 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: SOT23
Аналоги (замена) для L8050HPLT1G
L8050HPLT1G Datasheet (PDF)
l8050hplt1g l8050hplt3g l8050hqlt1g l8050hqlt3g l8050hrlt1g l8050hrlt3g l8050hslt1g l8050hslt3g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8050HQLTIG Series NPN Silicon S-L8050HQLTIG FEATURE Series High current capacity in compact package. IC =1.5 A. 3 Epitaxial planar type. NPN complement L8050H Pb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and
l8050hplt1g.pdf
LESHAN RADIO COMPANY, LTD. L8050HQLTIG General Purpose Transistors Series NPN Silicon S-L8050HQLTIG FEATURE Series High current capacity in compact package. IC =1.5 A. 3 Epitaxial planar type. NPN complement L8050H Pb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site 2 and Control Change Requirements; AEC-Q101 Qualified and
l8050hplt1g l8050hqlt1g l8050hrlt1g l8050hslt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8050HQLTIG Series NPN Silicon S-L8050HQLTIG FEATURE High current capacity in compact package. Series IC =1.5 A. Epitaxial planar type. 3 NPN complement L8050H Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requirements; AEC-Q101 Qualified and P
l8050hqlt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8050HQLTIG Series NPN Silicon S-L8050HQLTIG FEATURE Series High current capacity in compact package. IC =1.5 A. 3 Epitaxial planar type. NPN complement L8050H Pb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and
Другие транзисторы... L2SC5635WT1G , L2SC5658QM3T5G , L2SC5658RM3T5G , L2SD1781KRLT1G , L2SD2114KVLT1G , L2SD2114KWLT1G , L2SD882P , L2SD882Q , 2SD669 , L8050HQLT1G , L8050HRLT1G , L8050PLT1G , L8050QLT1G , L8550HPLT1G , L8550HQLT1G , L8550HRLT1G , L8550PLT1G .
History: 2SD1619 | DCX122TH | MT4104 | 92PE487 | MJD122G | RN2504 | DDTC113TLP
History: 2SD1619 | DCX122TH | MT4104 | 92PE487 | MJD122G | RN2504 | DDTC113TLP
Список транзисторов
Обновления
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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