L8550HRLT1G datasheet, аналоги, основные параметры
Наименование производителя: L8550HRLT1G 📄📄
Маркировка: 1HF
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.225 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1.5 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 200
Корпус транзистора: SOT23
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Аналоги (замена) для L8550HRLT1G
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L8550HRLT1G даташит
l8550hplt1g l8550hqlt1g l8550hrlt1g l8550hslt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8550HPLT1G Series PNP Silicon S-L8550HPLT1G FEATURE Series High current capacity in compact package. Epitaxial planar type. PNP complement L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requir
l8550hrlt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8550HPLT1G Series PNP Silicon S-L8550HPLT1G FEATURE Series High current capacity in compact package. Epitaxial planar type. PNP complement L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requir
l8550hplt1g l8550hplt3g l8550hqlt1g l8550hqlt3g l8550hrlt1g l8550hrlt3g l8550hslt1g l8550hslt3g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8550HPLT1G Series PNP Silicon S-L8550HPLT1G FEATURE Series High current capacity in compact package. Epitaxial planar type. PNP complement L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requir
l8550hplt1g.pdf
LESHAN RADIO COMPANY, LTD. L8550HPLT1G General Purpose Transistors Series PNP Silicon S-L8550HPLT1G Series FEATURE High current capacity in compact package. Epitaxial planar type. 3 PNP complement L8550H We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requirem
Другие транзисторы: L2SD882Q, L8050HPLT1G, L8050HQLT1G, L8050HRLT1G, L8050PLT1G, L8050QLT1G, L8550HPLT1G, L8550HQLT1G, 431, L8550PLT1G, L8550QLT1G, L9012PLT1G, L9012QLT1G, L9012RLT1G, L9012SLT1G, L9013PLT1G, L9013QLT1G
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