L9012PLT1G - аналоги и даташиты биполярного транзистора

 

L9012PLT1G - Даташиты. Аналоги. Основные параметры


   Наименование производителя: L9012PLT1G
   Маркировка: 12P
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.225 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 100
   Корпус транзистора: SOT23

 Аналоги (замена) для L9012PLT1G

 

L9012PLT1G Datasheet (PDF)

 ..1. Size:75K  lrc
l9012plt1g l9012qlt1g l9012rlt1g l9012slt1g.pdfpdf_icon

L9012PLT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9012PLT1G FEATURE Series We declare that the material of product compliance with RoHS requirements. S-L9012PLT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING INFORMATION Device Marking

 ..2. Size:82K  lrc
l9012plt1g.pdfpdf_icon

L9012PLT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9012PLT1G FEATURE Series We declare that the material of product compliance with RoHS requirements. S-L9012PLT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING INFORMATION Device Marking

 ..3. Size:79K  lrc
l9012plt1g l9012plt3g l9012qlt1g l9012qlt3g l9012rlt1g l9012rlt3g l9012slt1g l9012slt3g l9012rlt3g.pdfpdf_icon

L9012PLT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9012PLT1G FEATURE We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L9012PLT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING INFORMATION Device Marking

 ..4. Size:75K  lrc
l9012plt1g l9012plt3g l9012qlt1g l9012qlt3g l9012rlt1g l9012rlt3g l9012slt1g l9012slt3g.pdfpdf_icon

L9012PLT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9012PLT1G FEATURE Series We declare that the material of product compliance with RoHS requirements. S-L9012PLT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING INFORMATION Device Marking

Другие транзисторы... L8050HRLT1G , L8050PLT1G , L8050QLT1G , L8550HPLT1G , L8550HQLT1G , L8550HRLT1G , L8550PLT1G , L8550QLT1G , MJE350 , L9012QLT1G , L9012RLT1G , L9012SLT1G , L9013PLT1G , L9013QLT1G , L9013RLT1G , L9013SLT1G , L9014QLT1G .

History: 2SC3805 | 2SD1739 | KRA322 | 2SC3015 | KT837A1-IM | DDTA144VKA | BF841

 

 
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