L9013SLT1G. Аналоги и основные параметры
Наименование производителя: L9013SLT1G
Маркировка: 13S
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.225 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 300
Корпус транзистора: SOT23
Аналоги (замена) для L9013SLT1G
- подборⓘ биполярного транзистора по параметрам
L9013SLT1G даташит
l9013plt1g l9013plt3g l9013qlt1g l9013qlt3g l9013rlt1g l9013rlt3g l9013slt1g l9013slt3g s-l9013plt1g s-l9013plt3g s-l9013qlt1g s-l9013qlt3g s-l9013rlt1g s-l9013rlt3g s-9013slt1g sl9013slt3g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L9013PLT1G FEATURE We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L9013PLT1G Series DEVICE MARKING AND ORDERING INFORMATION Device Marking
l9013plt1g l9013plt3g l9013qlt1g l9013qlt3g l9013rlt1g l9013rlt3g l9013slt1g l9013slt3g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L9013PLT1G FEATURE We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L9013PLT1G Series DEVICE MARKING AND ORDERING INFORMATION Device Marking Sh
l9013slt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L9013PLT1G FEATURE We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L9013PLT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING INFORMATION Device Marking
l9013plt1g l9013qlt1g l9013rlt1g l9013slt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L9013PLT1G FEATURE We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L9013PLT1G Series DEVICE MARKING AND ORDERING INFORMATION Device Marking
Другие транзисторы: L8550QLT1G, L9012PLT1G, L9012QLT1G, L9012RLT1G, L9012SLT1G, L9013PLT1G, L9013QLT1G, L9013RLT1G, BD333, L9014QLT1G, L9014RLT1G, L9014SLT1G, L9014TLT1G, L9015QLT1G, L9015RLT1G, L9015SLT1G, LBC807-16LT1G
History: 2SC334
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Список транзисторов
Обновления
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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