Биполярный транзистор L9015RLT1G - описание производителя. Основные параметры. Даташиты.
Наименование производителя: L9015RLT1G
Маркировка: 15R
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.225 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 200
Корпус транзистора: SOT23
Аналоги (замена) для L9015RLT1G
L9015RLT1G Datasheet (PDF)
l9015qlt1g l9015rlt1g l9015slt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFEATUREL9015QLT1G Complementary to L9014. Series We declare that the material of product compliance with RoHS requirements.S-L9015QLT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SeriesDEVICE MARKING AND O
l9015qlt1g l9015qlt3g l9015rlt1g l9015rlt3g l9015slt1g l9015slt3g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFEATUREL9015QLT1G Complementary to L9014. Series We declare that the material of product compliance with RoHS requirements.S-L9015QLT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SeriesDEVICE MARKING AND ORDER
l9015rlt1g.pdf
Rev.O 1/4LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFEATURE Complementary to L9014.L9015QLT1G We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L9015QLT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SeriesDEVICE MARKI
l9015slt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFEATUREL9015QLT1G Complementary to L9014. Series We declare that the material of product compliance with RoHS requirements.S-L9015QLT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SeriesDEVICE MARKING AND O
l9015qlt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFEATUREL9015QLT1G Complementary to L9014. Series We declare that the material of product compliance with RoHS requirements.S-L9015QLT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SeriesDEVICE MARKING AND ORDER
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050