Справочник транзисторов. LBC846BWT1G

 

Биполярный транзистор LBC846BWT1G Даташит. Аналоги


   Наименование производителя: LBC846BWT1G
   Маркировка: 1B
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.15 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 65 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Ёмкость коллекторного перехода (Cc): 4.5 pf
   Статический коэффициент передачи тока (hfe): 200
   Корпус транзистора: SC70
 

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LBC846BWT1G Datasheet (PDF)

 ..1. Size:398K  lrc
lbc846bwt1g.pdfpdf_icon

LBC846BWT1G

LESHAN RADIO COMPANY, LTD.LBC846AWT1G,BWT1GGeneral Purpose TransistorsLBC847AWT1G,BWT1GNPN SiliconCWT1GWe declare that the material of product compliance with RoHS requirements.LBC848AWT1G,BWT1GS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.CWT1G( )ORDERING INFORMATION Pb Free

 ..2. Size:401K  lrc
lbc846awt1g lbc846bwt1g lbc847awt1g lbc847bwt1g lbc847cwt1g lbc848awt1g lbc848bwt1g lbc848cwt1g.pdfpdf_icon

LBC846BWT1G

LESHAN RADIO COMPANY, LTD.LBC846AWT1G,BWT1GGeneral Purpose TransistorsLBC847AWT1G,BWT1GNPN SiliconCWT1GWe declare that the material of product compliance with RoHS requirements.LBC848AWT1G,BWT1GS- Prefix for Automotive and Other Applications Requiring Unique Site andControl Change Requirements; AEC-Q101 Qualified and PPAP Capable.CWT1G( )ORDERING INFORMATIO

 7.1. Size:209K  lrc
lbc846bdw1t1g lbc846bdw1t3g lbc847bdw1t1g lbc847bdw1t3g lbc847cdw1t1g lbc847cdw1t3g lbc848bdw1t1g lbc848bdw1t3g lbc848cdw1t1g lbc848cdw1t3g lbc846adw1t1g lbc846adw1t3g.pdfpdf_icon

LBC846BWT1G

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN DualsLBC846ADW1T1G These transistors are designed for general purpose amplifierLBC846BDW1T1Gapplications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.LBC847BDW1T1GWe declare that the material of product compliance with LBC847CDW1T1GRoHS requirements.LBC848

 7.2. Size:172K  lrc
lbc846bpdw1t1g lbc846bpdw1t3g lbc847bpdw1t1g lbc847bpdw1t3g lbc847cpdw1t1g lbc847cpdw1t3g lbc848bpdw1t1g lbc848bpdw1t3g lbc848cpdw1t1g lbc848cpdw1t3g.pdfpdf_icon

LBC846BWT1G

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC846BPDW1T1GLBC847BPDW1T1GNPN/PNP Duals (Complimentary)LBC847CPDW1T1G These transistors are designed for general purpose amplifierLBC848BPDW1T1Gapplications. They are housed in the SOT363/SC88 which isLBC848CPDW1T1Gdesigned for low power surface mount applications.S-LBC846BPDW1T1GWe declare that the materi

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