Справочник транзисторов. LBC847BPDW1T1G

 

Биполярный транзистор LBC847BPDW1T1G - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: LBC847BPDW1T1G
   Маркировка: BF
   Тип материала: Si
   Полярность: NPN*PNP
   Максимальная рассеиваемая мощность (Pc): 0.25 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Ёмкость коллекторного перехода (Cc): 4.5 pf
   Статический коэффициент передачи тока (hfe): 200
   Корпус транзистора: SC88

 Аналоги (замена) для LBC847BPDW1T1G

 

 

LBC847BPDW1T1G Datasheet (PDF)

 ..1. Size:172K  lrc
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LBC847BPDW1T1G LBC847BPDW1T1G

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC846BPDW1T1GLBC847BPDW1T1GNPN/PNP Duals (Complimentary)LBC847CPDW1T1G These transistors are designed for general purpose amplifierLBC848BPDW1T1Gapplications. They are housed in the SOT363/SC88 which isLBC848CPDW1T1Gdesigned for low power surface mount applications.S-LBC846BPDW1T1GWe declare that the materi

 ..2. Size:172K  lrc
lbc846bpdw1t1g lbc847bpdw1t1g lbc847cpdw1t1g lbc848bpdw1t1g lbc848cpdw1t1g.pdf

LBC847BPDW1T1G LBC847BPDW1T1G

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC846BPDW1T1GLBC847BPDW1T1GNPN/PNP Duals (Complimentary)LBC847CPDW1T1G These transistors are designed for general purpose amplifierLBC848BPDW1T1Gapplications. They are housed in the SOT363/SC88 which isLBC848CPDW1T1Gdesigned for low power surface mount applications.S-LBC846BPDW1T1GWe declare that the materi

 ..3. Size:172K  lrc
lbc847bpdw1t1g.pdf

LBC847BPDW1T1G LBC847BPDW1T1G

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC846BPDW1T1GLBC847BPDW1T1GNPN/PNP Duals (Complimentary)LBC847CPDW1T1G These transistors are designed for general purpose amplifierLBC848BPDW1T1Gapplications. They are housed in the SOT363/SC88 which isLBC848CPDW1T1Gdesigned for low power surface mount applications.S-LBC846BPDW1T1GWe declare that the materi

 7.1. Size:209K  lrc
lbc846bdw1t1g lbc846bdw1t3g lbc847bdw1t1g lbc847bdw1t3g lbc847cdw1t1g lbc847cdw1t3g lbc848bdw1t1g lbc848bdw1t3g lbc848cdw1t1g lbc848cdw1t3g lbc846adw1t1g lbc846adw1t3g.pdf

LBC847BPDW1T1G LBC847BPDW1T1G

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN DualsLBC846ADW1T1G These transistors are designed for general purpose amplifierLBC846BDW1T1Gapplications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.LBC847BDW1T1GWe declare that the material of product compliance with LBC847CDW1T1GRoHS requirements.LBC848

 7.2. Size:391K  lrc
lbc847bwt1g.pdf

LBC847BPDW1T1G LBC847BPDW1T1G

LESHAN RADIO COMPANY, LTD.LBC846AWT1G,BWT1GGeneral Purpose TransistorsLBC847AWT1G,BWT1GNPN SiliconCWT1GWe declare that the material of product compliance with RoHS requirements.LBC848AWT1G,BWT1GCWT1G( )ORDERING INFORMATION Pb FreeS-LBC846AWT1G,BWT1GDevice Package ShippingS-LBC847AWT1G,BWT1GLBC846AWT1G SC-703000/Tape&ReelS-LBC846AWT1GCWT1GLBC846AWT3G SC-70

 7.3. Size:401K  lrc
lbc846awt1g lbc846bwt1g lbc847awt1g lbc847bwt1g lbc847cwt1g lbc848awt1g lbc848bwt1g lbc848cwt1g.pdf

LBC847BPDW1T1G LBC847BPDW1T1G

LESHAN RADIO COMPANY, LTD.LBC846AWT1G,BWT1GGeneral Purpose TransistorsLBC847AWT1G,BWT1GNPN SiliconCWT1GWe declare that the material of product compliance with RoHS requirements.LBC848AWT1G,BWT1GS- Prefix for Automotive and Other Applications Requiring Unique Site andControl Change Requirements; AEC-Q101 Qualified and PPAP Capable.CWT1G( )ORDERING INFORMATIO

 7.4. Size:402K  lrc
lbc846alt1g lbc846blt1g lbc847alt1g lbc847blt1g lbc847clt1g lbc848alt1g lbc848blt1g lbc848clt1g lbc849blt1g lbc849clt1g lbc850blt1g lbc850clt1g.pdf

LBC847BPDW1T1G LBC847BPDW1T1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1LBC846ALT1G ESD Rating Human Body Model: >4000 VS-LBC846ALT1GESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Chan

 7.5. Size:404K  lrc
lbc846alt1g lbc846alt3g lbc846blt1g lbc846blt3g lbc847alt1g lbc847alt3g lbc847blt1g lbc847blt3g lbc847clt1g.pdf

LBC847BPDW1T1G LBC847BPDW1T1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1 LBC846ALT1GS-LBC846ALT1G ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Chang

 7.6. Size:209K  lrc
lbc846bdw1t1g lbc847bdw1t1g lbc847cdw1t1g lbc848bdw1t1g lbc848cdw1t1g lbc846adw1t1g.pdf

LBC847BPDW1T1G LBC847BPDW1T1G

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN DualsLBC846ADW1T1G These transistors are designed for general purpose amplifierLBC846BDW1T1Gapplications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.LBC847BDW1T1GWe declare that the material of product compliance with LBC847CDW1T1GRoHS requirements.LBC848

 7.7. Size:850K  lrc
lbc847bn3t5g.pdf

LBC847BPDW1T1G LBC847BPDW1T1G

LBC847BN3T5GS-LBC847BN3T5GGeneral Purpose Transistors NPN Silicon1. FEATURESSOT883Moisture Sensitivity Level: 1ESD Rating Human Body Model: >4000 V Machine Model: >400 V3 COLLECTORWe declare that the material of product compliance with RoHS requirements and Halogen Free.1 BASES- prefix for automotive and other applications requiringunique sit

 7.8. Size:402K  lrc
lbc846alt1g lbc846alt3g lbc846blt1g lbc846blt3g lbc847alt1g lbc847alt3g lbc847blt1g lbc847blt3g lbc847clt1g lbc847clt3g lbc848alt1g lbc848alt3g.pdf

LBC847BPDW1T1G LBC847BPDW1T1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1 LBC846ALT1GS-LBC846ALT1G ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 3and Control C

 7.9. Size:138K  lrc
lbc847btt1g.pdf

LBC847BPDW1T1G LBC847BPDW1T1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconLBC847ATT1GThese transistors are designed for general purpose amplifierS-LBC847ATT1Gapplications. They are housed in the SC-89 package which is designed for low power surface mount applications. SeriesFeatures Pb-Free Packages are Available S- Prefix for Automotive and Other Applications Requiring Unique

 7.10. Size:280K  lrc
lbc847bdw1t1g lbc847bdw1t3g.pdf

LBC847BPDW1T1G LBC847BPDW1T1G

LBC847BDW1T1GS-LBC847BDW1T1GNPN Dual General Purpose Transistors1. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiringSC88(SOT-363) unique site and control change requirements; AEC-Q101 qualified and PPAP capable.2. DEVICE MARKING AND ORDERING INFORMATIONDevice

 7.11. Size:139K  lrc
lbc847att1g lbc847btt1g lbc847ctt1g.pdf

LBC847BPDW1T1G LBC847BPDW1T1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconLBC847ATT1GThese transistors are designed for general purpose amplifierS-LBC847ATT1Gapplications. They are housed in the SC-89 package which is designed for low power surface mount applications. SeriesFeatures Pb-Free Packages are Available S- Prefix for Automotive and Other Applications Requiring Unique

 7.12. Size:230K  lrc
lbc847bdw1t1g.pdf

LBC847BPDW1T1G LBC847BPDW1T1G

LESHAN RADIO COMPANY, LTD.LBC846ADW1T1GDual General Purpose TransistorsLBC846BDW1T1GLBC847BDW1T1GNPN DualsLBC847CDW1T1G These transistors are designed for general purpose amplifierLBC848BDW1T1Gapplications. They are housed in the SOT363/SC88 which isLBC848CDW1T1Gdesigned for low power surface mount applications.S-LBC846ADW1T1GWe declare that the material of produ

 7.13. Size:415K  lrc
lbc847blt1g.pdf

LBC847BPDW1T1G LBC847BPDW1T1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1LBC846ALT1G ESD Rating Human Body Model: >4000 VS-LBC846ALT1GESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Chan

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