LBC847CDW1T1G. Аналоги и основные параметры
Наименование производителя: LBC847CDW1T1G
Маркировка: 1G
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 4.5 pf
Статический коэффициент передачи тока (hFE): 420
Корпус транзистора: SC88
Аналоги (замена) для LBC847CDW1T1G
- подборⓘ биполярного транзистора по параметрам
LBC847CDW1T1G даташит
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LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals LBC846ADW1T1G These transistors are designed for general purpose amplifier LBC846BDW1T1G applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. LBC847BDW1T1G We declare that the material of product compliance with LBC847CDW1T1G RoHS requirements. LBC848
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LESHAN RADIO COMPANY, LTD. LBC846ADW1T1G Dual General Purpose Transistors LBC846BDW1T1G NPN Duals LBC847BDW1T1G LBC847CDW1T1G These transistors are designed for general purpose amplifier LBC848BDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC848CDW1T1G designed for low power surface mount applications. We declare that the material of product compliance wit
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LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals LBC846ADW1T1G These transistors are designed for general purpose amplifier LBC846BDW1T1G applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. LBC847BDW1T1G We declare that the material of product compliance with LBC847CDW1T1G RoHS requirements. LBC848
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LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN/PNP Duals (Complimentary) LBC846BPDW1T1G These transistors are designed for general purpose amplifier LBC847BPDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC847CPDW1T1G designed for low power surface mount applications. LBC848BPDW1T1G LBC848CPDW1T1G We declare that the material of product comp
Другие транзисторы: LBC846BWT1G, LBC847ALT1G, LBC847AWT1G, LBC847BDW1T1G, LBC847BLT1G, LBC847BPDW1T1G, LBC847BTT1G, LBC847BWT1G, 13003, LBC847CLT1G, LBC847CWT1G, LBC848ALT1G, LBC848BDW1T1G, LBC848BLT1G, LBC848BPDW1T1G, LBC848BWT1G, LBC848CDW1T1G
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Список транзисторов
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