LBC848BPDW1T1G - описание и поиск аналогов

 

LBC848BPDW1T1G. Аналоги и основные параметры

Наименование производителя: LBC848BPDW1T1G

Маркировка: BK

Тип материала: Si

Полярность: NPN*PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.25 W

Макcимально допустимое напряжение коллектор-база (Ucb): 30 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 100 MHz

Ёмкость коллекторного перехода (Cc): 4.5 pf

Статический коэффициент передачи тока (hFE): 200

Корпус транзистора: SC88

 Аналоги (замена) для LBC848BPDW1T1G

- подборⓘ биполярного транзистора по параметрам

 

LBC848BPDW1T1G даташит

 ..1. Size:172K  lrc
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LBC848BPDW1T1G

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC846BPDW1T1G LBC847BPDW1T1G NPN/PNP Duals (Complimentary) LBC847CPDW1T1G These transistors are designed for general purpose amplifier LBC848BPDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC848CPDW1T1G designed for low power surface mount applications. S-LBC846BPDW1T1G We declare that the materi

 ..2. Size:172K  lrc
lbc846bpdw1t1g lbc847bpdw1t1g lbc847cpdw1t1g lbc848bpdw1t1g lbc848cpdw1t1g.pdfpdf_icon

LBC848BPDW1T1G

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC846BPDW1T1G LBC847BPDW1T1G NPN/PNP Duals (Complimentary) LBC847CPDW1T1G These transistors are designed for general purpose amplifier LBC848BPDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC848CPDW1T1G designed for low power surface mount applications. S-LBC846BPDW1T1G We declare that the materi

 ..3. Size:173K  lrc
lbc848bpdw1t1g.pdfpdf_icon

LBC848BPDW1T1G

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC846BPDW1T1G LBC847BPDW1T1G NPN/PNP Duals (Complimentary) LBC847CPDW1T1G These transistors are designed for general purpose amplifier LBC848BPDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC848CPDW1T1G designed for low power surface mount applications. We declare that the material of product comp

 7.1. Size:209K  lrc
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LBC848BPDW1T1G

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals LBC846ADW1T1G These transistors are designed for general purpose amplifier LBC846BDW1T1G applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. LBC847BDW1T1G We declare that the material of product compliance with LBC847CDW1T1G RoHS requirements. LBC848

Другие транзисторы: LBC847BTT1G, LBC847BWT1G, LBC847CDW1T1G, LBC847CLT1G, LBC847CWT1G, LBC848ALT1G, LBC848BDW1T1G, LBC848BLT1G, S8550, LBC848BWT1G, LBC848CDW1T1G, LBC848CLT1G, LBC848CPDW1T1G, LBC848CWT1G, LBC850BLT1G, LBC850BWT1G, LBC850CLT1G

 

 

 

 

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