LBC848CPDW1T1G - описание и поиск аналогов

 

LBC848CPDW1T1G. Аналоги и основные параметры

Наименование производителя: LBC848CPDW1T1G

Маркировка: BL

Тип материала: Si

Полярность: NPN*PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.25 W

Макcимально допустимое напряжение коллектор-база (Ucb): 30 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 100 MHz

Ёмкость коллекторного перехода (Cc): 4.5 pf

Статический коэффициент передачи тока (hFE): 420

Корпус транзистора: SC88

 Аналоги (замена) для LBC848CPDW1T1G

- подборⓘ биполярного транзистора по параметрам

 

LBC848CPDW1T1G даташит

 ..1. Size:172K  lrc
lbc848cpdw1t1g.pdfpdf_icon

LBC848CPDW1T1G

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC846BPDW1T1G LBC847BPDW1T1G NPN/PNP Duals (Complimentary) LBC847CPDW1T1G These transistors are designed for general purpose amplifier LBC848BPDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC848CPDW1T1G designed for low power surface mount applications. We declare that the material of product comp

 ..2. Size:172K  lrc
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LBC848CPDW1T1G

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC846BPDW1T1G LBC847BPDW1T1G NPN/PNP Duals (Complimentary) LBC847CPDW1T1G These transistors are designed for general purpose amplifier LBC848BPDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC848CPDW1T1G designed for low power surface mount applications. S-LBC846BPDW1T1G We declare that the materi

 ..3. Size:172K  lrc
lbc846bpdw1t1g lbc847bpdw1t1g lbc847cpdw1t1g lbc848bpdw1t1g lbc848cpdw1t1g.pdfpdf_icon

LBC848CPDW1T1G

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC846BPDW1T1G LBC847BPDW1T1G NPN/PNP Duals (Complimentary) LBC847CPDW1T1G These transistors are designed for general purpose amplifier LBC848BPDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC848CPDW1T1G designed for low power surface mount applications. S-LBC846BPDW1T1G We declare that the materi

 7.1. Size:227K  lrc
lbc848cdw1t1g.pdfpdf_icon

LBC848CPDW1T1G

LESHAN RADIO COMPANY, LTD. LBC846ADW1T1G Dual General Purpose Transistors LBC846BDW1T1G LBC847BDW1T1G NPN Duals LBC847CDW1T1G These transistors are designed for general purpose amplifier LBC848BDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC848CDW1T1G designed for low power surface mount applications. S-LBC846ADW1T1G We declare that the material of produ

Другие транзисторы: LBC847CWT1G, LBC848ALT1G, LBC848BDW1T1G, LBC848BLT1G, LBC848BPDW1T1G, LBC848BWT1G, LBC848CDW1T1G, LBC848CLT1G, BD335, LBC848CWT1G, LBC850BLT1G, LBC850BWT1G, LBC850CLT1G, LX8050QLT1G, LBSS4240LT1G, LBSS5240LT1G, LH8050QLT1G

 

 

 

 

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